公开(公告)号：US08570804B2

公开(公告)日：2013-10-29

申请号：US13239411

申请日：2011-09-22

申请人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

发明人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

IPC分类号： G11C16/04 ,  G11C16/06 ,  G11C16/10 ,  G11C16/12 ,  G11C16/34 ,  G11C16/26

CPC分类号： G06F11/1068 ,  G06F11/1016 ,  G11C16/26

摘要： A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

公开(公告)号：US20120026789A1

公开(公告)日：2012-02-02

申请号：US13239411

申请日：2011-09-22

申请人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

发明人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

IPC分类号： G11C16/06

CPC分类号： G06F11/1068 ,  G06F11/1016 ,  G11C16/26

摘要： A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

摘要翻译： 用于操作存储器（28）的方法包括将存储器的一组模拟存储器单元（32）中的数据存储为相应的第一电压电平。 在存储数据之后，从相应的模拟存储器单元读取第二电压电平。 第二电压电平受到交叉耦合干扰的影响，导致第二电压电平与相应的第一电压电平不同。 通过处理第二电压电平来估计量化模拟存储器单元之间的交叉耦合干扰的交叉耦合系数。 使用估计的交叉耦合系数，从读取的第二电压电平重建存储在模拟存储器单元组中的数据。

公开(公告)号：US08599611B2

公开(公告)日：2013-12-03

申请号：US13239408

申请日：2011-09-22

申请人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

发明人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C16/06

CPC分类号： G06F11/1068 ,  G06F11/1016 ,  G11C16/26

摘要： A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

摘要翻译： 用于操作存储器（28）的方法包括将存储器的一组模拟存储器单元（32）中的数据存储为相应的第一电压电平。 在存储数据之后，从相应的模拟存储器单元读取第二电压电平。 第二电压电平受到交叉耦合干扰的影响，导致第二电压电平与相应的第一电压电平不同。 通过处理第二电压电平来估计量化模拟存储器单元之间的交叉耦合干扰的交叉耦合系数。 使用估计的交叉耦合系数，从读取的第二电压电平重建存储在模拟存储器单元组中的数据。

公开(公告)号：US08050086B2

公开(公告)日：2011-11-01

申请号：US11995801

申请日：2007-05-10

申请人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

发明人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C16/06

CPC分类号： G06F11/1068 ,  G06F11/1016 ,  G11C16/26

摘要： A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

摘要翻译： 用于操作存储器（28）的方法包括将存储器的一组模拟存储器单元（32）中的数据存储为相应的第一电压电平。 在存储数据之后，从相应的模拟存储器单元读取第二电压电平。 第二电压电平受到交叉耦合干扰的影响，导致第二电压电平与相应的第一电压电平不同。 通过处理第二电压电平来估计量化模拟存储器单元之间的交叉耦合干扰的交叉耦合系数。 使用估计的交叉耦合系数，从读取的第二电压电平重建存储在模拟存储器单元组中的数据。

公开(公告)号：US20080198650A1

公开(公告)日：2008-08-21

申请号：US11995801

申请日：2007-05-10

申请人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

发明人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

IPC分类号： G11C16/06 ,  G11C7/00 ,  G11C27/00

CPC分类号： G06F11/1068 ,  G06F11/1016 ,  G11C16/26

摘要： A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

摘要翻译： 用于操作存储器（28）的方法包括将存储器的一组模拟存储器单元（32）中的数据存储为相应的第一电压电平。 在存储数据之后，从相应的模拟存储器单元读取第二电压电平。 第二电压电平受到交叉耦合干扰的影响，导致第二电压电平与相应的第一电压电平不同。 通过处理第二电压电平来估计量化模拟存储器单元之间的交叉耦合干扰的交叉耦合系数。 使用估计的交叉耦合系数，从读取的第二电压电平重建存储在模拟存储器单元组中的数据。

公开(公告)号：US20120026788A1

公开(公告)日：2012-02-02

申请号：US13239408

申请日：2011-09-22

申请人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

发明人： Ofir Shalvi ,  Naftali Sommer ,  Eyal Gurgi ,  Ariel Maislos

IPC分类号： G11C16/06

CPC分类号： G06F11/1068 ,  G06F11/1016 ,  G11C16/26

摘要： A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

公开(公告)号：US20100157641A1

公开(公告)日：2010-06-24

申请号：US12063544

申请日：2007-05-10

申请人： Ofir Shalvi ,  Dotan Sokolov ,  Ariel Maislos ,  Zeev Cohen ,  Eyal Gurgi ,  Gil Semo

发明人： Ofir Shalvi ,  Dotan Sokolov ,  Ariel Maislos ,  Zeev Cohen ,  Eyal Gurgi ,  Gil Semo

IPC分类号： G11C27/00 ,  G11C8/00 ,  G11C7/00

CPC分类号： G11C16/349 ,  G06F2212/7205 ,  G06F2212/7206 ,  G11C11/56 ,  G11C11/5607 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C11/565 ,  G11C11/5657 ,  G11C11/5671 ,  G11C11/5678 ,  G11C27/005 ,  G11C2211/5621 ,  G11C2211/5641

摘要： A method for data storage in a memory (28) that includes a plurality of analog memory cells (32) includes estimating respective achievable storage capacities of the analog memory cells. The memory cells are assigned respective storage configurations defining quantities of data to be stored in the memory cells based on the estimated achievable capacities. The data is stored in the memory cells in accordance with the respective assigned storage configurations. The achievable storage capacities of the analog memory cells are re-estimated after the memory has been installed in a host system and used for storing the data in the host system. The storage configurations are modified responsively to the re-estimated achievable capacities.

摘要翻译： 一种用于在包括多个模拟存储器单元（32）的存储器（28）中的数据存储的方法包括估计模拟存储器单元的各个可实现的存储容量。 根据估计的可实现的容量，为存储器单元分配相应的存储配置，其定义要存储在存储器单元中的数据量。 数据根据相应的分配的存储配置存储在存储器单元中。 在存储器已经安装在主机系统中并用于在主机系统中存储数据之后，重新估计模拟存储器单元的可实现的存储容量。 存储配置根据重新估计的可实现容量进行修改。

公开(公告)号：US08694859B2

公开(公告)日：2014-04-08

申请号：US13539920

申请日：2012-07-02

申请人： Ofir Shalvi ,  Dotan Sokolov ,  Ariel Maislos ,  Zeev Cohen ,  Eyal Gurgi ,  Gil Semo

发明人： Ofir Shalvi ,  Dotan Sokolov ,  Ariel Maislos ,  Zeev Cohen ,  Eyal Gurgi ,  Gil Semo

IPC分类号： G06F11/00

CPC分类号： G11C16/349 ,  G06F2212/7205 ,  G06F2212/7206 ,  G11C11/56 ,  G11C11/5607 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C11/565 ,  G11C11/5657 ,  G11C11/5671 ,  G11C11/5678 ,  G11C27/005 ,  G11C2211/5621 ,  G11C2211/5641

摘要： A method for data storage in a memory that includes a plurality of analog memory cells includes estimating respective achievable storage capacities of the analog memory cells. The memory cells are assigned respective storage configurations defining quantities of data to be stored in the memory cells based on the estimated achievable capacities. The data is stored in the memory cells in accordance with the respective assigned storage configurations. The achievable storage capacities of the analog memory cells are re-estimated after the memory has been installed in a host system and used for storing the data in the host system. The storage configurations are modified responsively to the re-estimated achievable capacities.

摘要翻译： 一种用于在包括多个模拟存储器单元的存储器中的数据存储的方法包括估计模拟存储器单元的各自可实现的存储容量。 根据估计的可实现的容量，为存储器单元分配相应的存储配置，其定义要存储在存储器单元中的数据量。 数据根据相应的分配的存储配置存储在存储器单元中。 在存储器已经安装在主机系统中并用于在主机系统中存储数据之后，重新估计模拟存储器单元的可实现的存储容量。 存储配置根据重新估计的可实现容量进行修改。

公开(公告)号：US20130007566A1

公开(公告)日：2013-01-03

申请号：US13539920

申请日：2012-07-02

申请人： Ofir Shalvi ,  Dotan Sokolov ,  Ariel Maislos ,  Zeev Cohen ,  Eyal Gurgi ,  Gil Semo

发明人： Ofir Shalvi ,  Dotan Sokolov ,  Ariel Maislos ,  Zeev Cohen ,  Eyal Gurgi ,  Gil Semo

IPC分类号： G06F12/02 ,  H03M13/05

CPC分类号： G11C16/349 ,  G06F2212/7205 ,  G06F2212/7206 ,  G11C11/56 ,  G11C11/5607 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C11/565 ,  G11C11/5657 ,  G11C11/5671 ,  G11C11/5678 ,  G11C27/005 ,  G11C2211/5621 ,  G11C2211/5641

摘要： A method for data storage in a memory that includes a plurality of analog memory cells includes estimating respective achievable storage capacities of the analog memory cells. The memory cells are assigned respective storage configurations defining quantities of data to be stored in the memory cells based on the estimated achievable capacities. The data is stored in the memory cells in accordance with the respective assigned storage configurations. The achievable storage capacities of the analog memory cells are re-estimated after the memory has been installed in a host system and used for storing the data in the host system. The storage configurations are modified responsively to the re-estimated achievable capacities.

摘要翻译： 一种用于在包括多个模拟存储器单元的存储器中的数据存储的方法包括估计模拟存储器单元的各自可实现的存储容量。 根据估计的可实现的容量，为存储器单元分配相应的存储配置，其定义要存储在存储器单元中的数据量。 数据根据相应的分配的存储配置存储在存储器单元中。 在存储器已经安装在主机系统中并用于在主机系统中存储数据之后，重新估计模拟存储器单元的可实现的存储容量。 存储配置根据重新估计的可实现容量进行修改。

公开(公告)号：US08239735B2

公开(公告)日：2012-08-07

申请号：US12063544

申请日：2007-05-10

申请人： Ofir Shalvi ,  Dotan Sokolov ,  Ariel Maislos ,  Zeev Cohen ,  Eyal Gurgi ,  Gil Semo

发明人： Ofir Shalvi ,  Dotan Sokolov ,  Ariel Maislos ,  Zeev Cohen ,  Eyal Gurgi ,  Gil Semo

IPC分类号： G06F11/00

CPC分类号： G11C16/349 ,  G06F2212/7205 ,  G06F2212/7206 ,  G11C11/56 ,  G11C11/5607 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C11/565 ,  G11C11/5657 ,  G11C11/5671 ,  G11C11/5678 ,  G11C27/005 ,  G11C2211/5621 ,  G11C2211/5641

摘要： A method for data storage in a memory (28) that includes a plurality of analog memory cells (32) includes estimating respective achievable storage capacities of the analog memory cells. The memory cells are assigned respective storage configurations defining quantities of data to be stored in the memory cells based on the estimated achievable capacities. The data is stored in the memory cells in accordance with the respective assigned storage configurations. The achievable storage capacities of the analog memory cells are re-estimated after the memory has been installed in a host system and used for storing the data in the host system. The storage configurations are modified responsively to the re-estimated achievable capacities.

摘要翻译： 一种用于在包括多个模拟存储器单元（32）的存储器（28）中的数据存储的方法包括估计模拟存储器单元的各个可实现的存储容量。 根据估计的可实现的容量，为存储器单元分配相应的存储配置，其定义要存储在存储器单元中的数据量。 数据根据相应的分配的存储配置存储在存储器单元中。 在存储器已经安装在主机系统中并用于在主机系统中存储数据之后，重新估计模拟存储器单元的可实现的存储容量。 存储配置根据重新估计的可实现容量进行修改。