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公开(公告)号：US12031930B2
公开(公告)日：2024-07-09
申请号：US17396653
申请日：2021-08-06
Inventor： Kunihiko Nakamura , Masaki Fujikane , Kouhei Takahashi , Naoki Tambo , Yasuyuki Naito
CPC classification number: G01N27/02 , G01N33/0027
Abstract: A gas sensor includes a substrate, a support layer, a base layer, a heater layer disposed on or above the base layer, a gas sensing layer that is disposed on or above one of the heater layer and the base layer and that has a gas concentration dependent electrical impedance, and a detection electrode that is electrically connected to the gas sensing layer and that detects the impedance of the gas sensing layer. The substrate has a cavity and an opening formed by the cavity. The support layer is disposed on the substrate so as to cover at least an entire periphery of the opening. The base layer is supported by the support layer above the cavity so as to be separated from the substrate. A portion of the support layer in contact with the cavity has a first phononic crystal structure structured by a plurality of regularly arranged through-holes.
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公开(公告)号：US11917916B2
公开(公告)日：2024-02-27
申请号：US17349738
申请日：2021-06-16
Inventor： Masaki Fujikane , Naoki Tambo , Kunihiko Nakamura , Kouhei Takahashi , Yasuyuki Naito
IPC: H10N10/857 , H10N10/17 , H10N10/85
CPC classification number: H10N10/857 , H10N10/17 , H10N10/85
Abstract: A thermoelectric conversion element includes a p-type thermoelectric converter, an n-type thermoelectric converter, a first electrode, a second electrode, and a third electrode. One end of the p-type converter is electrically connected to one end of the n-type converter. The other end of the p-type converter is electrically connected to the second electrode, and the other end of the n-type converter is electrically connected to the third electrode. The p-type converter includes a first phononic crystal layer having a first phononic crystal structure including regularly arranged first through holes. The n-type converter includes a second phononic crystal layer having a second phononic crystal structure including regularly arranged second through holes. The through direction of the first through holes is a direction extending between the ends of the p-type converter. The through direction of the second through holes is a direction extending between the ends of the n-type converter.
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3.发明授权Liquid treatment device, liquid treatment method, and plasma treatment liquid 有权液体处理装置，液体处理方法和等离子体处理液公开(公告)号：US09540256B2
公开(公告)日：2017-01-10
申请号：US14662182
申请日：2015-03-18
Inventor： Masaki Fujikane , Mari Onodera , Hironori Kumagai , Shin-ichi Imai
CPC classification number: C02F1/4608 , B01J19/088 , B01J2219/0809 , B01J2219/0815 , B01J2219/0894 , C02F2201/46 , C02F2201/46175 , C02F2303/04 , H05H1/2406 , H05H2001/2418
Abstract: The present disclosure provides a liquid treatment device, a liquid treatment method, and a plasma treatment liquid each capable of efficiently generating plasma and treating a liquid in a short time period. A liquid treatment device according to the present disclosure includes a first electrode, a second electrode disposed in a liquid to be treated, an insulator disposed around the first electrode with a space between the first electrode and the insulator, the insulator has an opening portion in a position in contact with the liquid to be treated, a power supply that applies voltage between the first electrode and the second electrode, and a supply device supplying a liquid to the space before the power source applies the voltage.
Abstract translation: 本公开内容提供了能够在短时间内有效地产生等离子体和处理液体的液体处理装置，液体处理方法和等离子体处理液。 根据本公开的液体处理装置包括第一电极，设置在待处理液体中的第二电极，在第一电极周围设置有在第一电极和绝缘体之间具有空间的绝缘体，绝缘体具有开口部分 与待处理的液体接触的位置，在第一电极和第二电极之间施加电压的电源以及在电源施加电压之前向空间供应液体的供应装置。
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公开(公告)号：US12167692B2
公开(公告)日：2024-12-10
申请号：US17702859
申请日：2022-03-24
Inventor： Masaki Fujikane , Kouhei Takahashi , Naoki Tambo , Kunihiko Nakamura , Yasuyuki Naito
Abstract: A thermoelectric conversion device includes: an insulating layer; and a thermoelectric conversion module disposed on the insulating layer. The thermoelectric conversion module has a first thermoelectric conversion region and a second thermoelectric conversion region. The first(second) thermoelectric conversion region includes one or two or more thermoelectric conversion elements, a first(third) connection electrode, and a second(fourth) connection electrode. The thermoelectric conversion elements of the first(second) thermoelectric conversion region are electrically connected to the first(third) connection electrode and the second(fourth) connection electrode and located on an electric path connecting these connection electrodes. Each of the thermoelectric conversion elements includes a thermoelectric converter. The thermoelectric converter of at least one of the thermoelectric conversion elements has a phononic crystal layer having a phononic crystal structure including a plurality of regularly arranged through holes. A through direction of the plurality of through holes in this crystal structure is substantially parallel to a direction perpendicular to a principal surface of the insulating layer.
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公开(公告)号：US09969627B2
公开(公告)日：2018-05-15
申请号：US14516917
申请日：2014-10-17
Inventor： Shin-Ichi Imai , Masaki Fujikane
CPC classification number: C02F1/467 , C02F1/4608 , C02F2201/4619 , C02F2305/023
Abstract: A liquid treatment apparatus for treating water to be treated, according to the present disclosure, includes a treatment tank, a dielectric partition wall dividing inside of the treatment tank into a first space in which the water to be treated is injected, and a second space in which an electrolytic solution is filled, a first electrode at least part of which is arranged in the first space of the treatment tank, a second electrode at least part of which is arranged in the second space of the treatment tank, and a power supply that applies a high-frequency AC voltage between the first electrode and the second electrode.
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Patent Agency Ranking
公开(公告)号：US09708201B2
公开(公告)日：2017-07-18
申请号：US14530741
申请日：2014-11-01
Inventor： Masaki Fujikane , Mari Onodera , Shin-Ichi Imai
CPC classification number: C02F1/4608 , C02F1/4672 , C02F2001/46142 , C02F2001/46171 , C02F2201/46105 , C02F2303/04 , C02F2305/023
Abstract: A liquid treatment apparatus includes a dielectric tube through which water to be treated flows, a first electrode, at least one end of which is dispose in the dielectric tube, and a second electrode made of a conductive metallic material, at least one end of the second electrode being disposed in the dielectric tube and on an upstream side of a flow pass of the water relative to the first electrode. The conductive metallic material of the second electrode is adapted to be in direct contact with the water to be treated. The liquid treatment apparatus also includes a power supply for applying a voltage between the first electrode and the second electrode, and a heat-resistant member covering at least a portion of an inner wall face of the dielectric tube. The portion of the inner wall faces the first electrode.
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公开(公告)号：US09593030B2
公开(公告)日：2017-03-14
申请号：US14693896
申请日：2015-04-23
Inventor： Masaki Fujikane , Mari Onodera , Shin-ichi Imai
CPC classification number: C02F1/4608 , A61L2/14 , A62D3/19 , C02F1/50 , C02F1/72 , C02F2201/003 , C02F2201/46175 , C02F2201/4619 , C02F2201/48 , C02F2303/04 , C02F2305/023 , C02F2307/12 , H05H1/2406 , H05H2001/245 , H05H2001/4697 , H05H2245/1225
Abstract: A liquid treatment apparatus includes a dielectric tube through which water to be treated flows, a first electrode at least a part of which is disposed in the dielectric tube, a second electrode at least a part of which is disposed in the dielectric tube at a position upstream of the first electrode, a gas supplier operative to generate a bubble by supplying a gas into the water to be treated, and a power supply operative to apply a voltage between the first electrode and the second electrode in a state in which the bubble covers a conductor-exposed portion of the first electrode.
Abstract translation: 一种液体处理装置，包括：待被处理水流过的介电管，至少一部分第一电极设置在电介质管中的第一电极，至少一部分电介质管的至少一部分设置在电介质管的位置 在第一电极的上游，气体供应器通过向待处理的水中供应气体而产生气泡;以及电源，其操作以在气泡覆盖的状态下在第一电极和第二电极之间施加电压 第一电极的导体暴露部分。
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公开(公告)号：US11906363B2
公开(公告)日：2024-02-20
申请号：US17347470
申请日：2021-06-14
Inventor： Kouhei Takahashi , Naoki Tambo , Kunihiko Nakamura , Masaki Fujikane , Yasuyuki Naito
CPC classification number: G01J5/22 , H01L31/095 , H01L31/20 , G01J2005/204
Abstract: An infrared sensor includes: a base substrate; a bolometer infrared receiver; a first beam; and a second beam. Each of the first and second beams has a connection portion connected to the base substrate and/or a member on the base substrate and a separated portion away from the base substrate, and is physically joined to the infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams to be away from the base substrate. The infrared receiver includes a resistance change portion including a resistance change material the electrical resistance of which changes with temperature. The resistance change portion includes an amorphous semiconductor, and the first and second beams include a crystalline semiconductor made of the same base material as the resistance change material, and is electrically connected to the resistance change portion at the separated portion.
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公开(公告)号：US10526727B2
公开(公告)日：2020-01-07
申请号：US16433505
申请日：2019-06-06
Inventor： Masaki Fujikane
Abstract: A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05° to 15° inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on the surface of the irregular portion is 10° or less.
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10.发明授权公开(公告)号：US10378124B2
公开(公告)日：2019-08-13
申请号：US15589016
申请日：2017-05-08
Inventor： Masaki Fujikane
Abstract: A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05° to 15° inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 MΩ·cm or more on the surface of the irregular portion is 10° or less.
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