Bolometer and method for manufacturing same

    公开(公告)号:US12013288B2

    公开(公告)日:2024-06-18

    申请号:US17731435

    申请日:2022-04-28

    申请人: NEC Corporation

    发明人: Mayumi Kosaka

    摘要: An object of the present invention is to provide a bolometer having a high TCR value and a low resistance, and a method for manufacturing the same.
    According to the present invention, a bolometer manufacturing method including: fabricating an interlayer having a function that enhances binding between a substrate and a carbon nanotube, in a predetermined shape on the substrate; and, making a semiconducting carbon nanotube dispersion liquid move on the interlayer in one direction relative to the fabricated interlayer is provided.

    Infrared sensor and infrared sensor array

    公开(公告)号:US12007283B2

    公开(公告)日:2024-06-11

    申请号:US17347467

    申请日:2021-06-14

    IPC分类号: H10N19/00 G01J5/22 G01J5/20

    摘要: Each of first and second beams has a connection portion connected to a base substrate and a separated portion away from the base substrate, and is physically joined to an infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams, and includes lower electrode, upper electrode, and a resistance change film. The resistance change film is sandwiched by the lower electrode and upper electrode in a thickness direction, each of the lower and upper electrodes is electrically connected to the resistance change film, the lower and upper electrodes are electrically connected to first wiring and second wiring, respectively, at least one electrode selected from the lower electrode and the upper electrode has a line-and-space structure, and an infrared reflection film is provided at a position on a surface of the base substrate facing the infrared receiver.

    LOW-DRIFT INFRARED DETECTOR
    8.
    发明申请

    公开(公告)号:US20190154511A1

    公开(公告)日:2019-05-23

    申请号:US16191733

    申请日:2018-11-15

    摘要: A semiconductor device for measuring IR radiation comprising: at least one sensor pixel; at least one reference pixel shielded from said IR radiation comprising a heater; a controller adapted for: measuring a responsivity by applying power to the heater, while not heating the sensor pixel; measuring a first output signal of an unheated pixel and a first reference output signal of the heated pixel, obtaining the responsivity as a function of a measure of the applied power to the heater and of the difference between the first output signal and the first reference output signal; applying a period of cooling down until the temperature of the reference pixel and the sensor pixel are substantially the same; generating the output signal indicative of the IR radiation, based on the difference between the sensor and the reference output signal, by converting this difference using the responsivity.