公开(公告)号：US20240304566A1

公开(公告)日：2024-09-12

申请号：US18435425

申请日：2024-02-07

Applicant: Renesas Electronics Corporation

Inventor： Yuki YAMAMOTO ,  Hiroyuki ARIE

IPC: H01L23/00 ,  H01L21/265 ,  H01L21/768 ,  H01L23/522 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L23/562 ,  H01L21/26513 ,  H01L21/768 ,  H01L23/5226 ,  H01L29/66681 ,  H01L29/7816

Abstract: A semiconductor device includes a semiconductor substrate having a first main surface and a second main surface, a plurality of interlayer dielectric films, and a plurality of wiring layers stacked above the first main surface. Each of the plurality of interlayer dielectric films is interposed between two adjacent ones of the plurality of wiring layers and between one of the plurality of wiring layers closest to the first main surface in a first direction and the first main surface. A trench recessed toward the second main surface is formed on the first main surface. The trench includes a straight portion extending along a second direction. The plurality of wiring layers has a first wiring layer farthest from the first main surface in the first direction and a second wiring layer farthest from the first main surface next to the first wiring layer in the first direction.

公开(公告)号：US20240014067A1

公开(公告)日：2024-01-11

申请号：US18319248

申请日：2023-05-17

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Hiroyuki ARIE ,  Takayuki IGARASHI

IPC: H01L21/762 ,  H01L27/12

CPC classification number: H01L21/76283 ,  H01L27/1203

Abstract: A semiconductor device having a semiconductor substrate, a BOX film on the semiconductor substrate, a semiconductor layer on the BOX film, a first trench penetrated through the semiconductor layer and reached to the first insulating film, a first insulating film covering a side surface of the first trench and in contact with an upper surface of the BOX film at a bottom of the first trench, a second trench formed at the bottom of the first trench such that the second trench penetrates through the first insulating film and reached in the BOX film, a second insulating film filled in the first trench and the second trench. A bottom surface of the second trench is located in the BOX film below an interface between the semiconductor layer and the BOX film, and a void is located in the second insulating film at the same height the interface.

公开(公告)号：US20150130009A1

公开(公告)日：2015-05-14

申请号：US14528724

申请日：2014-10-30

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Katsumi EIKYU ,  Atsushi SAKAI ,  Hiroyuki ARIE

IPC: H01L27/146 ,  H01L31/18 ,  H01L31/028

CPC classification number: H01L27/14645 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14689 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1804

Abstract: To provide a semiconductor device having a photoelectric conversion element having a high sensitivity, causing less blooming, and capable of providing a highly reliable image. The semiconductor device has a semiconductor substrate, a first p type epitaxial layer, a second p type epitaxial layer, and a first photoelectric conversion element. The first p type epitaxial layer is formed over the main surface of the semiconductor substrate. The second p type epitaxial layer is formed so as to cover the upper surface of the first p type epitaxial layer. The first photoelectric conversion element is formed in the second p type epitaxial layer. The first and second p type epitaxial layers are each made of silicon and the first p type epitaxial layer has a p type impurity concentration higher than that of the second p type epitaxial layer.

Abstract translation: 为了提供具有高灵敏度的光电转换元件的半导体器件，引起较少的起霜，并且能够提供高可靠性的图像。 半导体器件具有半导体衬底，第一p型外延层，第二p型外延层和第一光电转换元件。 第一p型外延层形成在半导体衬底的主表面上。 形成第二p型外延层以覆盖第一p型外延层的上表面。 第一光电转换元件形成在第二p型外延层中。 第一和第二p型外延层各自由硅制成，并且第一p型外延层的p型杂质浓度高于第二p型外延层的p型杂质浓度。