公开(公告)号：US20230369179A1

公开(公告)日：2023-11-16

申请号：US18172665

申请日：2023-02-22

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Katsuhiko KITAGAWA ,  Takehiko MAEDA ,  Kuniharu MUTO ,  Takeshi MIYAKOSHI

IPC: H01L23/495 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00

CPC classification number: H01L23/49513 ,  H01L23/49582 ,  H01L23/3121 ,  H01L21/565 ,  H01L24/48 ,  H01L24/05 ,  H01L2224/04042 ,  H01L2224/48247 ,  H01L2924/35121 ,  H01L2924/181

Abstract: A semiconductor device includes: a die pad having an upper surface facing a semiconductor chip, a metal film formed on the upper surface, and a bonding material formed so as to cover the metal film. Here, the upper surface has: a first region overlapping the semiconductor chip, a second region not overlapping the semiconductor chip, a third region included in the first region and covered with the metal film, and a fourth region included in the first region and adjacent to the third region and also not covered with the metal film. Also, the semiconductor chip is mounted on the die pad such that a center of the semiconductor chip overlaps the third region. Further, an area of the third region is greater than or equal to 11% of an area of the first region, and less than or equal to 55% of the area of the first region.