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1.发明申请Non-planar sputter targets having crystlallographic orientations promoting uniform deposition 失效具有促进均匀沉积的结晶取向的非平面溅射靶公开(公告)号：US20090235709A1
公开(公告)日：2009-09-24
申请号：US12455159
申请日：2009-05-29
IPC分类号： B21D26/02
CPC分类号： C23C14/3407 , C23C14/3414 , H01J37/34 , H01J37/3426 , Y10T29/49805
摘要： A non-planar sputter target having differing crystallographic orientations in portions of the sputter target surface that promote more desirable deposition and density patterns of material sputtered from the target surface onto a substrate. A closed dome end of the sputter target is comprised of a first crystallographic orientation and sidewalls of the sputter target are comprised of a crystallographic orientation different from that of the dome. The sputter target is formed, preferably by hydroforming or other metal working techniques, in the absence of annealing. The hydroforming manipulations result in the different crystallographic orientations while minimizing, or ideally omitting, the application of heat. Quick and cost effective non-planar sputter targets that are easily repeatably producable are achievable as a result.
摘要翻译： 在溅射靶表面的部分中具有不同结晶取向的非平面溅射靶，其促进从目标表面溅射到衬底上的材料的更理想的沉积和密度图案。 溅射靶的闭合圆顶端由第一结晶取向组成，溅射靶的侧壁由不同于圆顶的晶体取向组成。 优选通过液压成型或其它金属加工技术在不存在退火的情况下形成溅射靶。 液压成形操作导致不同的晶体取向，同时最小化或理想地省略了热的应用。 因此可以实现易于重复生产的快速且经济有效的非平面溅射靶。
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2.发明授权Non-planar sputter targets having crystallographic orientations promoting uniform deposition 失效具有促进均匀沉积的晶体取向的非平面溅射靶公开(公告)号：US08037727B2
公开(公告)日：2011-10-18
申请号：US12455159
申请日：2009-05-29
CPC分类号： C23C14/3407 , C23C14/3414 , H01J37/34 , H01J37/3426 , Y10T29/49805
摘要： A non-planar sputter target having differing crystallographic orientations in portions of the sputter target surface that promote more desirable deposition and density patterns of material sputtered from the target surface onto a substrate. A closed dome end of the sputter target is comprised of a first crystallographic orientation and sidewalls of the sputter target are comprised of a crystallographic orientation different from that of the dome. The sputter target is formed, preferably by hydroforming or other metal working techniques, in the absence of annealing. The hydroforming manipulations result in the different crystallographic orientations while minimizing, or ideally omitting, the application of heat. Quick and cost effective non-planar sputter targets that are easily repeatably producable are achievable as a result.
摘要翻译： 在溅射靶表面的部分中具有不同结晶取向的非平面溅射靶，其促进从目标表面溅射到衬底上的材料的更理想的沉积和密度图案。 溅射靶的闭合圆顶端由第一结晶取向组成，溅射靶的侧壁由不同于圆顶的晶体取向组成。 优选通过液压成型或其它金属加工技术在不存在退火的情况下形成溅射靶。 液压成形操作导致不同的晶体取向，同时最小化或理想地省略了热的应用。 因此可以实现易于重复生产的快速且经济有效的非平面溅射靶。
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公开(公告)号：US09546418B2
公开(公告)日：2017-01-17
申请号：US13984961
申请日：2012-02-09
申请人： Weifang Miao , David B. Smathers , Eugene Y. Ivanov , Erich Theado , Robert S. Bailey , Jeff Hart
发明人： Weifang Miao , David B. Smathers , Eugene Y. Ivanov , Erich Theado , Robert S. Bailey , Jeff Hart
CPC分类号： H01J37/3426 , C23C14/3407 , C23C14/3414 , H01J37/3414 , H01J37/3423 , H01J37/3435
摘要： A method of making a diffusion bonded sputter target assembly is provided. A target blank comprising a first metal or alloy has a first surface defining a sputtering surface and a second surface. A second metal or alloy is placed around the target blank. A backing plate is provided adjacent the second metal or alloy that is positioned alongside of the second target surface. This assembly is then diffusion bonded, and a portion of the second metal overlying the sputtering surface of the target is removed to expose the target sputtering surface. W target or W alloy target/Ti or Ti alloy backing plate assemblies are provided with an Al interlayer positioned intermediate the W or W alloy target and backing plate. The assembly has a bond strength exceeding 50 MPa.
摘要翻译： 提供制造扩散接合溅射靶组件的方法。 包括第一金属或合金的目标坯料具有限定溅射表面的第一表面和第二表面。 第二个金属或合金被放置在靶坯周围。 靠近位于第二目标表面旁边的第二金属或合金提供背板。 然后将该组件扩散接合，并且去除覆盖靶的溅射表面的第二金属的一部分以露出靶溅射表面。 W靶或W合金靶/ Ti或Ti合金背板组件设置有位于W或W合金靶和背衬板之间的Al中间层。 该组件的粘合强度超过50MPa。
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公开(公告)号：US20140034490A1
公开(公告)日：2014-02-06
申请号：US13984961
申请日：2012-02-09
申请人： Weifang Miao , David B. Smathers , Eugene Y. Ivanov , Erich Theado , Robert S. Bailey , Jeff Hart
发明人： Weifang Miao , David B. Smathers , Eugene Y. Ivanov , Erich Theado , Robert S. Bailey , Jeff Hart
IPC分类号： C23C14/34
CPC分类号： H01J37/3426 , C23C14/3407 , C23C14/3414 , H01J37/3414 , H01J37/3423 , H01J37/3435
摘要： A method of making a diffusion bonded sputter target assembly is provided. A target blank comprising a first metal or alloy has a first surface defining a sputtering surface and a second surface. A second metal or alloy is placed around the target blank. A backing plate is provided adjacent the second metal or alloy that is positioned alongside of the second target surface. This assembly is then diffusion bonded, and a portion of the second metal overlying the sputtering surface of the target is removed to expose the target sputtering surface. W target or W alloy target/Ti or Ti alloy backing plate assemblies are provided with an Al inter-layer positioned intermediate the W or W alloy target and backing plate. The assembly has a bond strength exceeding 50 MPa.
摘要翻译： 提供制造扩散接合溅射靶组件的方法。 包括第一金属或合金的目标坯料具有限定溅射表面的第一表面和第二表面。 第二个金属或合金被放置在靶坯周围。 靠近位于第二目标表面旁边的第二金属或合金提供背板。 然后将该组件扩散接合，并且去除覆盖靶的溅射表面的第二金属的一部分以露出靶溅射表面。 W靶或W合金靶/ Ti或Ti合金背板组件设置有位于W或W合金靶和衬板之间的Al层间。 该组件的粘合强度超过50MPa。
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公开(公告)号：US20110056828A1
公开(公告)日：2011-03-10
申请号：US12736311
申请日：2010-01-06
CPC分类号： C23C14/3407 , B21C23/001 , B21J1/04 , B21J1/06 , C22C21/00 , C22F1/04 , C23C14/3414
摘要： Aluminum or aluminum alloy sputter targets and methods of making same are provided. The pure aluminum or aluminum alloy is mechanically worked to produce a circular blank, and then the blank is given a recrystallization anneal to achieve desirable grain size and crystallographic texture. A 10-50% additional strain is provided to the blank step after the annealing to increase the mechanical strength. Further, in a flange area of the target, the strain is greater than in the other target areas with the strain in the flange area being imparted at a rate of about 20-60% strain. The blank is then finished to form a sputtering target with desirable crystallographic texture and adequate mechanical strength.
摘要翻译： 提供铝或铝合金溅射靶及其制造方法。 对纯铝或铝合金进行机械加工以产生圆形坯料，然后将坯料进行再结晶退火，以获得所需的晶粒尺寸和晶体织构。 在退火之后向坯料步骤提供10-50％的附加应变以增加机械强度。 此外，在靶的凸缘区域中，应变大于在其他目标区域中的应变，其中凸缘区域中的应变以约20-60％应变的速率施加。 然后将坯料完成以形成具有所需晶体学结构和足够的机械强度的溅射靶。
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公开(公告)号：US20090160137A1
公开(公告)日：2009-06-25
申请号：US12380154
申请日：2009-02-24
IPC分类号： F16J15/02
CPC分类号： F16J15/062
摘要： A vacuum seal having an O-ring between two mating parts. One of the mating parts has a groove configured to receive the O-ring. The groove has a modified dovetail shape with at least one side wall having a compound slope formed with a first portion forming an angle of less than 90 degrees with respect to a base wall and a second portion extending substantially perpendicular to the sealing face of the mating part. The cross-sectional area of the groove is less than 95% of the cross sectional area of the O-ring and the width of the groove mouth is at least 94% of the diameter of the O-ring.
摘要翻译： 在两个配合部件之间具有O形环的真空密封件。 配合部件中的一个具有构造成接收O形环的凹槽。 凹槽具有改进的燕尾形状，其中至少一个侧壁具有形成有相对于基壁形成角度小于90度的第一部分的复合斜面，以及基本上垂直于配合的密封面延伸的第二部分 部分。 槽的横截面积小于O形环的横截面面积的95％，并且槽口的宽度至少为O形环直径的94％。
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公开(公告)号：US08551267B2
公开(公告)日：2013-10-08
申请号：US12736311
申请日：2010-01-06
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , B21C23/001 , B21J1/04 , B21J1/06 , C22C21/00 , C22F1/04 , C23C14/3414
摘要： Aluminum or aluminum alloy sputter targets and methods of making same are provided. The pure aluminum or aluminum alloy is mechanically worked to produce a circular blank, and then the blank is given a recrystallization anneal to achieve desirable grain size and crystallographic texture. A 10-50% additional strain is provided to the blank step after the annealing to increase the mechanical strength. Further, in a flange area of the target, the strain is greater than in the other target areas with the strain in the flange area being imparted at a rate of about 20-60% strain. The blank is then finished to form a sputtering target with desirable crystallographic texture and adequate mechanical strength.
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8.发明申请Copper Sputtering Target With Fine Grain Size And High Electromigration Resistance And Methods Of Making the Same 审中-公开具有细粒度和高耐电迁移性的铜溅射靶及其制造方法公开(公告)号：US20100000860A1
公开(公告)日：2010-01-07
申请号：US12310699
申请日：2007-08-29
CPC分类号： C23C14/3414 , C22C1/02 , C22C9/00
摘要： The present invention generally provides a sputtering target comprising copper and a total of 0.001 wt %˜10 wt % alloying element or elements chosen from the group consisting of Al, Ag, Co, Cr, Ir, Fe, Mo, Ti, Pd, Ru, Ta, Sc, Hf, Zr, V, Nb, Y, and rare earth metals. An exemplary copper sputtering containing 0.5 wt % aluminum has superfine grain size, high thermal stability, and high electromigration resistance, and is able to form films with desired film uniformity, excellent resistance to electromigration and oxidation, and high adhesion to dielectric interlayer. An exemplary copper sputtering containing 12 ppm silver has superfine grain size. This invention also provides methods of manufacturing copper sputtering targets.
摘要翻译： 本发明通常提供一种溅射靶，其包含铜和总共0.001重量％〜10重量％的选自Al，Ag，Co，Cr，Ir，Fe，Mo，Ti，Pd，Ru的合金元素或元素 ，Ta，Sc，Hf，Zr，V，Nb，Y和稀土金属。 含有0.5重量％铝的示例性铜溅射具有超细晶粒尺寸，高热稳定性和高电迁移性，并且能够形成具有期望的膜均匀性，优异的电迁移和氧化性以及对电介质中间层的高粘附性的膜。 含有12ppm银的示例性铜溅射具有超细晶粒尺寸。 本发明还提供了制造铜溅射靶的方法。
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公开(公告)号：US3955197A
公开(公告)日：1976-05-04
申请号：US518401
申请日：1966-01-03
CPC分类号： G01S13/288 , G01S13/325
摘要： A code generator produces one sequence of coded pulses having a predetermined code pattern. This sequence of coded pulses is transmitted to a remote point and received from the remote point to provide a replica of the sequence of coded pulses. A correlator is coupled to the generator and receiver responsive to the sequence and its replica to produce due to the predetermined code pattern an impulse output only when the sequence and its replica are time coincident and a zero output at all other time relationships between the sequence and its replica.
摘要翻译： 代码生成器产生具有预定代码模式的编码脉冲序列。 编码脉冲序列被发送到远程点并从远程点接收以提供编码脉冲序列的副本。 只有当序列及其副本是时间一致时，相关器才能响应于序列及其副本而由于预定的码型而产生脉冲输出，并且在序列和序列之间的所有其他时间关系处的零输出 其副本。
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公开(公告)号：US4871651A
公开(公告)日：1989-10-03
申请号：US211648
申请日：1988-06-27
IPC分类号： G03F7/26 , G03F7/40 , G03F7/42 , H01L21/027 , H01L21/3205 , H05K3/14
CPC分类号： G03F7/40 , H01L21/0272 , H05K3/143
摘要： This invention is directed to a process for the cryogenic lift-off of metal/resist material from a surface of a substrate.
摘要翻译： 本发明涉及一种从基材表面对金属/抗蚀剂材料进行低温剥离的方法。
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