公开(公告)号：US20180113803A1

公开(公告)日：2018-04-26

申请号：US15706967

申请日：2017-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DAEHYUN KIM ,  BOKYOUNG KIM ,  SEONGHOON WOO

IPC: G06F12/02 ,  G06F3/06 ,  G11C16/10 ,  G11C16/26

CPC classification number: G06F12/0246 ,  G06F3/061 ,  G06F3/0659 ,  G06F3/0679 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26 ,  G11C16/32

Abstract: A method, executed by a memory controller, of controlling a nonvolatile memory device having first and second planes includes transmitting a first command included in a command queue to the nonvolatile memory device. A block address of a second command is compared with a block address of a third command, when the third command is queued ahead of the second command in the command queue. The second command is selectively transmitted to the nonvolatile memory device prior to the third command based on the comparison result.