公开(公告)号：US20160032185A1

公开(公告)日：2016-02-04

申请号：US14879835

申请日：2015-10-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Won BAE ,  Yongsun KO ,  Byoungho KWON ,  Bo yun KIM ,  Hongjin KIM ,  Sungoh PARK ,  Kuntack LEE ,  Hyosan LEE ,  Sol HAN

IPC: C09K13/06 ,  C23F1/26

CPC classification number: C09K13/06 ,  C23F1/26 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76883

Abstract: An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

Abstract translation: 蚀刻组合物包含约1重量％至约7重量％的过氧化氢，约20重量％至约80重量％的磷酸，约0.001重量％至约1重量％的胺或酰胺聚合物，0重量％ 约55重量％的硫酸和约10重量％至约45重量％的去离子水。

公开(公告)号：US20140141616A1

公开(公告)日：2014-05-22

申请号：US14086426

申请日：2013-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Won BAE ,  Yongsun KO ,  Byoungho KWON ,  Bo yun KIM ,  Hongjin KIM ,  Sungoh PARK ,  Kuntack LEE ,  Hyosan LEE ,  Sol HAN

IPC: H01L21/321 ,  H01L21/02

CPC classification number: C09K13/06 ,  C23F1/26 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76883

Abstract: An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

Abstract translation: 蚀刻组合物包含约1重量％至约7重量％的过氧化氢，约20重量％至约80重量％的磷酸，约0.001重量％至约1重量％的胺或酰胺聚合物，0重量％ 约55重量％的硫酸和约10重量％至约45重量％的去离子水。

公开(公告)号：US20130183824A1

公开(公告)日：2013-07-18

申请号：US13733506

申请日：2013-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoungho KWON ,  Kuntack LEE ,  Yongsun KO ,  Hongjin KIM ,  Sangwon BAE ,  Sigyung AHN ,  Jun-Youl YANG ,  Sol HAN ,  Bo yun KIM ,  Myung-Ki HONG

IPC: H01L21/768

CPC classification number: H01L21/76841 ,  H01L21/02074 ,  H01L21/76861

Abstract: A method of fabricating a semiconductor device includes forming a first layer including a first metal, forming a second layer including a second metal, the second layer being adjacent to the first layer, polishing top surfaces of the first and second layers, and cleaning the first and second layers using a cleaning solution. The cleaning solution may include an etching solution etching the first and second layers and an inhibitor suppressing the second layer from being over etched.

Abstract translation: 制造半导体器件的方法包括形成包括第一金属的第一层，形成包括第二金属的第二层，第二层邻近第一层，抛光第一层和第二层的顶表面，以及清洁第一层 和使用清洁溶液的第二层。 清洁溶液可以包括蚀刻溶液，蚀刻第一和第二层以及抑制第二层的抑制剂被过蚀刻。