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Patent Agency Ranking
公开(公告)号：US20250062229A1
公开(公告)日：2025-02-20
申请号：US18660743
申请日：2024-05-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Changhee Lee , Chulmin Choi , Sangyong Park , Dajin Kim , Taeho Kim , Gunwook Yoon , Taehun Kim , Seungjae Baik , Jaeduk Lee
IPC: H01L23/528 , H01L25/065 , H10B41/10 , H10B41/27 , H10B41/35 , H10B43/10 , H10B43/27 , H10B43/35 , H10B80/00
Abstract: A semiconductor device includes a first semiconductor structure that includes a first substrate, circuit devices on the first substrate, a lower interconnection structure, and a lower bonding structure; and a second semiconductor structure disposed on and connected to the first semiconductor structure The second semiconductor structure includes a stack structure; channel structures that including a first portion that penetrate through the stack structure in the vertical direction and a second portion that extends upward from the first portion; a first material layer disposed on the stack structure and the channel structure and having first conductivity; and a second material layer disposed between the first material layer and the stack structure and having second conductivity., The first material layer overlaps second portions of the channel structures in the vertical direction, and the second material layer does not overlap the second portions of the channel structures in the vertical direction.
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公开(公告)号：US09807769B2
公开(公告)日：2017-10-31
申请号：US14759919
申请日：2014-01-08
Inventor： Inkyu Lee , Sunghyun Moon , Changhee Lee
CPC classification number: H04W72/046 , H04B7/024 , H04B7/24 , H04L1/00 , H04L25/0258 , H04W72/082 , Y02D70/00 , Y02D70/442 , Y02D70/448
Abstract: A method for transmitting and receiving a signal of a terminal, according to an embodiment of the present invention includes the steps of: receiving a signal from a base station; calculating an expected value of the signal to interference plus noise ratio (SINR) based on the received signal; and choosing a beamforming method based on the expected value of SINR. The present invention can provide a method and an apparatus which apply adaptive ICIC in CoMP environment so as to maximize WSR with reduced complexity of calculation, thus having a performance comparable to that determined by the conventional method, and providing the user with a smooth communication environment with improved quality. Furthermore, a terminal communicating with a base station chooses a desirable beamforming technique with reduced complexity so as to decrease the complexity of the system and to provide higher power efficiency with a faster calculation speed. Besides, it is possible for a base station to readily choose the user group and the beamforming technique group with the optimum communication environment.
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3.发明申请公开(公告)号：US20150358953A1
公开(公告)日：2015-12-10
申请号：US14759919
申请日：2014-01-08
Inventor： Inkyu Lee , Sunghyun Moon , Changhee Lee
CPC classification number: H04W72/046 , H04B7/024 , H04B7/24 , H04L1/00 , H04L25/0258 , H04W72/082 , Y02D70/00 , Y02D70/442 , Y02D70/448
Abstract: A method for transmitting and receiving a signal of a terminal, according to an embodiment of the present invention includes the steps of: receiving a signal from a base station; calculating an expected value of the signal to interference plus noise ratio (SINR) based on the received signal; and choosing a beamforming method based on the expected value of SINR. The present invention can provide a method and an apparatus which apply adaptive ICIC in CoMP environment so as to maximize WSR with reduced complexity of calculation, thus having a performance comparable to that determined by the conventional method, and providing the user with a smooth communication environment with improved quality. Furthermore, a terminal communicating with a base station chooses a desirable beamforming technique with reduced complexity so as to decrease the complexity of the system and to provide higher power efficiency with a faster calculation speed. Besides, it is possible for a base station to readily choose the user group and the beamforming technique group with the optimum communication environment.
Abstract translation: 根据本发明的实施例的用于发送和接收终端信号的方法包括以下步骤：从基站接收信号; 基于接收到的信号计算信号与干扰加噪声比（SINR）的期望值; 并根据SINR的预期值选择波束成形方法。 本发明可以提供一种在CoMP环境中应用自适应ICIC的方法和装置，以便以降低的计算复杂度最大化WSR，从而具有与常规方法所确定的性能相当的性能，并为用户提供平滑的通信环境 质量提高。 此外，与基站通信的终端选择具有降低的复杂度的期望的波束形成技术，以便降低系统的复杂性并以更快的计算速度提供更高的功率效率。 此外，基站可以容易地选择具有最佳通信环境的用户组和波束成形技术组。
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公开(公告)号：US12213316B2
公开(公告)日：2025-01-28
申请号：US17720376
申请日：2022-04-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Suhwan Lim , Nambin Kim , Samki Kim , Taehun Kim , Hanvit Yang , Changhee Lee , Jaehun Jung , Hyeongwon Choi
Abstract: A semiconductor device includes a lower structure including a semiconductor substrate and circuit devices on the semiconductor substrate; a stack structure including interlayer insulating layers and gate electrodes alternating in a vertical direction; and a channel structure penetrating the stack structure. The channel structure includes a core insulating layer, a channel layer, a gate dielectric layer, and a channel pad. A portion of the channel pad overlaps an uppermost gate electrode among the gate electrodes in a horizontal direction. The channel pad includes a first pad layer and a second pad layer on the first pad layer. The second pad layer includes doped polysilicon that is doped with impurities and having N-type conductivity. The first pad layer includes at least one of an undoped polysilicon region and a doped polysilicon region having N-type conductivity and having an impurity concentration lower than an impurity concentration of the second pad layer.
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公开(公告)号：US20250133738A1
公开(公告)日：2025-04-24
申请号：US18661467
申请日：2024-05-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chulmin Choi , Changhee Lee , Dajin Kim , Jiwoong Kim , Tae Hun Kim , Sang-Yong Park , Seung Jae Baik , Gun-Wook Yoon , Jaeduk Lee
IPC: H10B43/27 , H01L25/065 , H10B41/10 , H10B41/27 , H10B41/35 , H10B41/41 , H10B43/10 , H10B43/35 , H10B43/40 , H10B80/00
Abstract: A semiconductor device includes a gate stack with alternating conductive patterns and insulating patterns. The device also includes a first memory channel structure including a first channel layer enclosed by the gate stack and a first memory layer enclosing the first channel layer. The device also includes a source structure electrically connected to the first channel layer. The source structure includes several source layers stacked atop one another. The first channel layer is in physical contact with the second source layer but apart from the other source layers. The first source layer contains impurities of a first conductivity type. The second source layer is formed of an impurity-free material. The third source layer contains impurities of a second conductivity type different from the first conductivity type.
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