Plasma processing apparatus
    1.
    发明授权

    公开(公告)号:US11244839B2

    公开(公告)日:2022-02-08

    申请号:US16385919

    申请日:2019-04-16

    Abstract: A plasma processing apparatus includes a process chamber, a substrate chuck disposed in the process chamber, and a temperature controller. The substrate chuck is configured to receive a substrate, and includes a cooling channel through which a coolant flows. The temperature controller is configured to control a temperature of the coolant supplied to the cooling channel. The temperature controller includes a cooler configured to cool the coolant supplied to the cooling channel, a heater configured to heat the coolant supplied to the cooling channel, and a 3-way valve configured to regulate a first flow rate of the coolant passing through the cooler and a second flow rate of the coolant passing through the heater.

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