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    ELECTRON MICROSCOPE HAVING A CARRIER
    3.
    发明申请
    ELECTRON MICROSCOPE HAVING A CARRIER 有权
    具有载体的电子显微镜

    公开(公告)号：US20160172152A1

    公开(公告)日：2016-06-16

    申请号：US14964586

    申请日：2015-12-10

    申请人： Industrial Technology Research Institute

    发明人： Hsin-Hung Lee ,  Cheng-Yu Lee ,  Chun-Lin Chiang ,  Kun-Chih Tsai ,  Win-Ti Lin

    IPC分类号： H01J37/18 ,  H01J37/244 ,  H01J37/20 ,  H01J37/28

    CPC分类号： H01J37/20 ,  G01N35/1095 ,  H01J37/28 ,  H01J2237/18 ,  H01J2237/2004 ,  H01J2237/2065

    摘要： An electronic microscope includes a carrier, a first driving unit, a flow-buffer unit and an electron source. The carrier carries a sample. The first driving unit drives a first fluid to flow along a first flow path, wherein the first flow path passes through the sample. The flow-buffer unit is disposed on the first flow path to perform buffering on the first fluid, wherein the first fluid flows through the flow-buffer unit and the carrier in sequence. The electron source provides an electron beam to the sample.

    摘要翻译： 电子显微镜包括载体，第一驱动单元，流动缓冲单元和电子源。 载体携带样品。 第一驱动单元驱动第一流体沿着第一流动路径流动，其中第一流动路径通过样品。 流缓冲单元设置在第一流路上以对第一流体进行缓冲，其中第一流体依次流过流缓冲单元和载体。 电子源向样品提供电子束。

    METHOD AND SYSTEM FOR 4D TOMOGRAPHY AND ULTRAFAST SCANNING ELECTRON MICROSCOPY
    5.
    发明申请
    METHOD AND SYSTEM FOR 4D TOMOGRAPHY AND ULTRAFAST SCANNING ELECTRON MICROSCOPY 有权
    4D扫描和超声波扫描电子显微镜的方法和系统

    公开(公告)号：US20110284744A1

    公开(公告)日：2011-11-24

    申请号：US12884001

    申请日：2010-09-16

    申请人： Ahmed H. Zewail ,  Oh-Hoon Kwon ,  Omar Farghaly Mohammed Abdelsaboor ,  Ding-Shyue Yang

    发明人： Ahmed H. Zewail ,  Oh-Hoon Kwon ,  Omar Farghaly Mohammed Abdelsaboor ,  Ding-Shyue Yang

    IPC分类号： H01J37/28 ,  H01J37/26

    CPC分类号： H01J37/28 ,  H01J37/228 ,  H01J37/285 ,  H01J2237/0432 ,  H01J2237/2004 ,  H01J2237/20207 ,  H01J2237/2065 ,  H01J2237/2611 ,  H01J2237/2803

    摘要： A 4D electron tomography system includes a stage having one or more degrees of freedom, an electron source, and electron optics operable to direct electron pulses to impinge on a sample supported on the stage. A pulse of the electron pulses impinges on the sample at a first time. The system also includes a laser system and optics operable to direct optical pulses to impinge on the sample. A pulse of the optical pulses impinges on the sample at a second time. The system further includes a detector operable to receive the electron pulses passing through the sample, a controller operable to independently modify an orientation of the stage and at least one of the first time or the second time, a memory operable to store sets of images, and a processor operable to form a 4D tomgraphic image set from the sets of images.

    摘要翻译： 4D电子断层摄影系统包括具有一个或多个自由度的阶段，电子源和可操作以将电子脉冲引导到支撑在舞台上的样本上的电子光学器件。 电子脉冲的脉冲在第一次撞击样品。 该系统还包括激光系统和光学器件，其可操作以引导光脉冲撞击样品。 光脉冲的脉冲在第二次撞击样品。 该系统还包括可操作以接收通过样品的电子脉冲的检测器，可操作以独立地修改载物台的取向和第一时间或第二时间中的至少一个的控制器，可操作地存储图像集合的存储器， 以及处理器，可操作以从所述图像集合形成4D成像图像集。

    Method and system for ultrafast photoelectron microscope
    6.
    发明授权
    Method and system for ultrafast photoelectron microscope 有权
    超快光电子显微镜的方法和系统

    公开(公告)号：US07915583B2

    公开(公告)日：2011-03-29

    申请号：US12234567

    申请日：2008-09-19

    申请人： Ahmed Zewail ,  Vladimir Lobastov

    发明人： Ahmed Zewail ,  Vladimir Lobastov

    IPC分类号： H01J37/26 ,  H01J37/252

    CPC分类号： H01J37/26 ,  H01J37/065 ,  H01J37/073 ,  H01J37/24 ,  H01J37/243 ,  H01J37/265 ,  H01J2237/0432 ,  H01J2237/06333 ,  H01J2237/06341 ,  H01J2237/206 ,  H01J2237/2065 ,  H01J2237/24585 ,  H01J2237/2482 ,  H01J2237/2803 ,  H01J2237/2809 ,  H01J2237/2813 ,  H01J2237/2855

    摘要： An ultrafast system (and methods) for characterizing one or more samples. The system includes a stage assembly, which has a sample to be characterized. The system has a laser source that is capable of emitting an optical pulse of less than 1 ps in duration. The system has a cathode coupled to the laser source. In a specific embodiment, the cathode is capable of emitting an electron pulse less than 1 ps in duration. The system has an electron lens assembly adapted to focus the electron pulse onto the sample disposed on the stage. The system has a detector adapted to capture one or more electrons passing through the sample. The one or more electrons passing through the sample is representative of the structure of the sample. The detector provides a signal (e.g., data signal) associated with the one or more electrons passing through the sample that represents the structure of the sample. The system has a processor coupled to the detector. The processor is adapted to process the data signal associated with the one or more electrons passing through the sample to output information associated with the structure of the sample. The system has an output device coupled to the processor. The output device is adapted to output the information associated with the structure of the sample.

    摘要翻译： 用于表征一个或多个样品的超快系统（和方法）。 该系统包括具有要表征的样品的载物台组件。 该系统具有能够发射持续时间小于1ps的光脉冲的激光源。 该系统具有耦合到激光源的阴极。 在具体实施例中，阴极能够发射持续时间小于1ps的电子脉冲。 该系统具有适于将电子脉冲聚焦到设置在载物台上的样品上的电子透镜组件。 该系统具有适于捕获穿过样品的一个或多个电子的检测器。 通过样品的一个或多个电子代表样品的结构。 检测器提供与通过样品的一个或多个电子相关联的信号（例如，数据信号），其表示样品的结构。 该系统具有耦合到检测器的处理器。 处理器适于处理与通过样本的一个或多个电子相关联的数据信号，以输出与样本的结构相关联的信息。 该系统具有耦合到处理器的输出设备。 输出设备适于输出与样本结构相关联的信息。

    TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION
    7.
    发明申请
    TECHNIQUES FOR TEMPERATURE-CONTROLLED ION IMPLANTATION 有权
    温度控制离子植入技术

    公开(公告)号：US20080042078A1

    公开(公告)日：2008-02-21

    申请号：US11778335

    申请日：2007-07-16

    申请人： Jonathan Gerald ENGLAND ,  Richard Stephen Muka ,  Scott C. Holden

    发明人： Jonathan Gerald ENGLAND ,  Richard Stephen Muka ,  Scott C. Holden

    IPC分类号： H01J37/08

    CPC分类号： H01J37/20 ,  H01J2237/2001 ,  H01J2237/2065 ,  H01J2237/31701 ,  H01J2237/336 ,  H01L21/67109 ,  H01L21/67213

    摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for high-temperature ion implantation. The apparatus may comprise a platen to hold a wafer in a single-wafer process chamber during ion implantation, the platen having a wafer interface to provide a predetermined thermal contact between the wafer and the platen. The apparatus may also comprise an array of heating elements to heat the wafer while the wafer is held on the platen to achieve a predetermined temperature profile on the wafer during ion implantation, the heating elements being external to the platen. The apparatus may further comprise a post-implant cooling station to cool down the wafer after ion implantation of the wafer.

    摘要翻译： 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于高温离子注入的装置。 该装置可以包括在离子注入期间将晶片保持在单晶片处理室中的压板，压板具有晶片界面以在晶片和压板之间提供预定的热接触。 该装置还可以包括加热元件的阵列，以将晶片保持在压板上，以在离子注入期间在晶片上实现预定的温度分布，加热元件在压板外部。 该装置还可以包括植入物后冷却台，以在晶片的离子注入之后冷却晶片。

    Apparatus and method for evaluating cross section of specimen
    8.
    发明授权
    Apparatus and method for evaluating cross section of specimen 失效
    用于评估试样横截面的装置和方法

    公开(公告)号：US07297947B2

    公开(公告)日：2007-11-20

    申请号：US11212673

    申请日：2005-08-29

    申请人： Taiko Motoi

    发明人： Taiko Motoi

    IPC分类号： G01N23/00

    CPC分类号： G01N1/32 ,  G01N1/42 ,  H01J37/28 ,  H01J37/3005 ,  H01J37/3045 ,  H01J2237/2001 ,  H01J2237/2065 ,  H01J2237/2482 ,  H01J2237/31749

    摘要： An apparatus for evaluating a cross section of a specimen in a specimen chamber, wherein the apparatus includes a specimen stage for placing the specimen, a temperature regulation unit for regulating the temperature of the specimen, an ion beam generation unit for irradiating the specimen with an ion beam thereby performing cross section processing and observation of the specimen, a detection unit for detecting emission signals emitted from the specimen in response to the irradiation of the ion beam for observing the specimen, and a marking unit for marking the specimen.

    摘要翻译： 一种用于评价样本室中的样本的横截面的装置，其中，所述装置包括用于放置样本的样本台，用于调节样本的温度的温度调节单元，用于将样本照射的样品的离子束产生单元 离子束，由此对样本进行截面处理和观察;检测单元，用于响应于用于观察样本的离子束的照射来检测从样本发射的发射信号;以及标记单元，用于标记样本。