公开(公告)号：US20190385860A1

公开(公告)日：2019-12-19

申请号：US16260816

申请日：2019-01-29

Applicant: Samsung Electronics CO., LTD

Inventor： CHEONKYU LEE ,  Moonseok Kim ,  Iksu Byun ,  Changwoo Song ,  Seongha Jeong ,  Dongseok Han

IPC: H01L21/3065 ,  H01L21/311 ,  H01J37/32

Abstract: A method of etching at a low temperature includes cooling a pedestal on which a wafer is disposed, etching the wafer by generating plasma from a gas supplied through a gas distribution unit, and injecting a heated inert gas into the chamber through the gas distribution unit.

公开(公告)号：US11251022B2

公开(公告)日：2022-02-15

申请号：US16871427

申请日：2020-05-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kangmin Jeon ,  Dougyong Sung ,  Jongwoo Sun ,  Minkyu Sung ,  Kimoon Jung ,  Seongha Jeong ,  Ungyo Jung ,  Jewoo Han

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67

Abstract: A gas supply assembly for a substrate processing apparatus includes a gas introduction part, a gas distribution plate connected to the gas introduction part, the gas distribution plate including a plurality of through holes, and a shower head disposed under the gas distribution plate, the shower head including a plurality of distribution holes in fluid communication with the plurality of through holes. One through hole is in fluid communication with at least two distribution holes, and each of the plurality of distribution holes has a first diameter and a second diameter differing from each other in the shower head.

公开(公告)号：US10818503B2

公开(公告)日：2020-10-27

申请号：US16260816

申请日：2019-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Cheonkyu Lee ,  Moonseok Kim ,  Iksu Byun ,  Changwoo Song ,  Seongha Jeong ,  Dongseok Han

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/311

Abstract: A method of etching at a low temperature includes cooling a pedestal on which a wafer is disposed, etching the wafer by generating plasma from a gas supplied through a gas distribution unit, and injecting a heated inert gas into the chamber through the gas distribution unit.