公开(公告)号：US20130313514A1

公开(公告)日：2013-11-28

申请号：US13842812

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Wook HWANG ,  Geon Wook YOO ,  Nam Goo CHA ,  Jae Hyeok HEO ,  Han Kyu SEONG ,  Hun Jae CHUNG

IPC: H01L33/16

CPC classification number: H01L33/16 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y99/00 ,  H01L33/08 ,  H01L33/24 ,  H01L33/38 ,  H01L33/405 ,  Y10S977/762

Abstract: There is provided a semiconductor light emitting device including: a substrate and a nanostructures spaced apart from one another on the substrate. The nanostructures includes a first conductivity-type semiconductor layer core, an active layer, and a second conductivity-type semiconductor layer. A filler fills spaces between the nanostructures and is formed to be lower than the plurality of nanostructures. An electrode is formed to cover upper portions of the nanostructures and portions of lateral surfaces of the nanostructures and electrically connected to the second conductivity-type semiconductor layer.

Abstract translation: 提供了一种半导体发光器件，包括：衬底和在衬底上彼此间隔开的纳米结构。 纳米结构包括第一导电型半导体层芯，有源层和第二导电型半导体层。 填料填充纳米结构之间的空间并形成为低于多个纳米结构。 形成电极以覆盖纳米结构的上部和纳米结构的侧表面的部分并电连接到第二导电型半导体层。

公开(公告)号：US20140217361A1

公开(公告)日：2014-08-07

申请号：US14249002

申请日：2014-04-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han Kyu SEONG ,  Hun Jae CHUNG ,  Jung Ja YANG ,  Cheol Soo SONE

IPC: H01L33/04

CPC classification number: H01L33/04 ,  H01L27/156 ,  H01L33/08 ,  H01L33/16 ,  H01L33/24 ,  Y10S977/816

Abstract: There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof.

Abstract translation: 公开了III族氮化物纳米棒发光器件及其制造方法。 III族氮化物纳米棒发光器件包括：基板，形成在基板上的绝缘膜，并且包括暴露基板的不同直径的部分的多个开口，以及分别形成在第一导电III族氮化物纳米棒 所述多个开口，其中所述第一导电III族氮化物纳米棒中的每一个具有有源层和在其表面上顺序地形成的第二导电半导体层。

公开(公告)号：US20130252363A1

公开(公告)日：2013-09-26

申请号：US13894918

申请日：2013-05-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han Kyu SEONG ,  Hun Jae CHUNG ,  Jung Ja YANG ,  Cheol Soo SONE

IPC: H01L33/32

CPC classification number: H01L33/32 ,  H01L33/08 ,  H01L33/16 ,  H01L33/24

Abstract: A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed through the openings by supplying a group III source gas and a nitrogen (N) source gas thereto, growing first conductive group III nitride nanorods on the first conductive group III nitride nanorod seed layers by supplying the group III source gas and an impurity source gas in a pulse mode and continuously supplying the N source gas, forming an active layer on a surface of each of the first conductive group III nitride nanorods, and forming a second conductive nitride semiconductor layer on the active layer.

Abstract translation: 一种III族氮化物纳米棒发光器件及其制造方法。 该方法包括：准备衬底，形成绝缘膜，该绝缘膜包括一个或多个开口，暴露在衬底上的衬底的部分;通过提供第III族源气体，在通过开口暴露的衬底上生长第一导电III族氮化物纳米棒种子层; 通过向第一导电III族氮化物纳米棒种子层生长第一导电III族氮化物纳米棒，通过以脉冲模式提供第III族源气体和杂质源气体并连续地供给N源气体，形成氮 在所述第一导电III族氮化物纳米棒中的每一个的表面上的有源层，以及在所述有源层上形成第二导电氮化物半导体层。