公开(公告)号：US20210159310A1

公开(公告)日：2021-05-27

申请号：US17147542

申请日：2021-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-suk LEE ,  Ji-won YU ,  Ji-woon PARK

IPC: H01L49/02 ,  H01L27/108 ,  H01L27/10

Abstract: A semiconductor device includes a lower electrode structure, an upper electrode structure, and a dielectric layer between the lower and upper electrode structures and on side surfaces and an upper surface of the lower electrode structure. The lower electrode structure includes a first lower electrode pattern having a cylindrical shape, a barrier layer on the first lower electrode pattern, and a second lower electrode pattern in a space defined by the barrier layer.

公开(公告)号：US20190333985A1

公开(公告)日：2019-10-31

申请号：US16508695

申请日：2019-07-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-suk LEE ,  Ji-won YU ,  Ji-woon PARK

IPC: H01L49/02 ,  H01L27/108

Abstract: A semiconductor device includes a lower electrode structure, an upper electrode structure, and a dielectric layer between the lower and upper electrode structures and on side surfaces and an upper surface of the lower electrode structure. The lower electrode structure includes a first lower electrode pattern having a cylindrical shape, a barrier layer on the first lower electrode pattern, and a second lower electrode pattern in a space defined by the barrier layer.

公开(公告)号：US20180019300A1

公开(公告)日：2018-01-18

申请号：US15448683

申请日：2017-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-suk LEE ,  Ji-won YU ,  Ji-woon PARK

IPC: H01L49/02 ,  H01L23/535 ,  H01L27/108

CPC classification number: H01L28/75 ,  H01L23/535 ,  H01L27/10805 ,  H01L27/1085 ,  H01L27/10852 ,  H01L28/90

Abstract: A semiconductor device includes a lower electrode structure, an upper electrode structure, and a dielectric layer between the lower and upper electrode structures and on side surfaces and an upper surface of the lower electrode structure. The lower electrode structure includes a first lower electrode pattern having a cylindrical shape, a barrier layer on the first lower electrode pattern, and a second lower electrode pattern in a space defined by the barrier layer.

公开(公告)号：US20180019125A1

公开(公告)日：2018-01-18

申请号：US15651068

申请日：2017-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-won YU ,  Hyun-suk LEE ,  Ji-woon PARK ,  Gi-hee CHO ,  Hee-sook PARK ,  Woong-hee SOHN

IPC: H01L21/205 ,  H01L21/54 ,  H01L21/67 ,  H01L21/677

CPC classification number: H01L21/205 ,  C23C16/045 ,  C23C16/4408 ,  C23C16/45527 ,  H01L21/54 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67739 ,  H01L21/67769

Abstract: A method of manufacturing a semiconductor device, the method including supplying a first reactant to inside a processing chamber into which a substrate has been introduced; controlling a flow of a first purge gas and storing the first purge gas, of which flow has been controlled, in a first storage for a given time period; supplying the first purge gas from the first storage to the inside of the processing chamber after supplying the first reactant; and supplying a second reactant to the inside of the processing chamber after supplying the first purge gas.