-
公开(公告)号：US12211795B2
公开(公告)日：2025-01-28
申请号：US17509636
申请日：2021-10-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jinsub Kim , Kyoung-Hee Kim , Munjun Kim , Jun Kwan Kim , Woo Choel Noh
IPC: H01L23/532 , H01L21/768 , H01L23/522 , H10B12/00
Abstract: A semiconductor device includes a substrate including a cell array region and a peripheral circuit region, capacitors on the cell array region of the substrate, peripheral transistors on the peripheral circuit region of the substrate, a first upper interlayer insulating layer on the capacitors and the peripheral transistors, a first upper contact electrically connected to at least one of the peripheral transistors, the first upper contact penetrating the first upper interlayer insulating layer, a first upper interconnection line provided on the first upper interlayer insulating layer and electrically connected to the first upper contact, a second upper interlayer insulating layer covering the first upper interconnection line, and a first blocking layer between the first upper interlayer insulating layer and the second upper interlayer insulating layer. The first blocking layer is absent between the first upper interconnection line and the first upper interlayer insulating layer.
-
Patent Agency Ranking
公开(公告)号：US20140312456A1
公开(公告)日：2014-10-23
申请号：US14256232
申请日：2014-04-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyoung-Hee Kim , Ho-Ki Lee , Gilheyun Choi , Kyu-Hee Han , Jongwon Hong
IPC: H01L29/06 , H01L23/535
CPC classification number: H01L29/0649 , H01L21/764 , H01L21/7682 , H01L23/5222 , H01L23/53238 , H01L23/53266 , H01L23/5329 , H01L23/53295 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor device can include wiring lines on a substrate and an interlayer insulating structure, between ones of the wiring lines. The wiring lines can include a pore-containing layer that includes a plurality of pores extending away from a surface of the substrate, wherein ones of the pores have respective volumes that increase with a distance from the substrate until reaching an air gap layer above the pore-containing layer and beneath uppermost surfaces of the wiring lines.
Abstract translation: 半导体器件可以包括衬底上的布线和层间绝缘结构，在布线之间。 布线可以包括含孔层，其包括远离衬底表面延伸的多个孔，其中孔中的一些孔具有随着与衬底的距离而增加的体积，直到达到孔的上方的气隙层 并且在布线的最上表面之下。
-
公开(公告)号：US12016178B2
公开(公告)日：2024-06-18
申请号：US18097592
申请日：2023-01-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyoung-Hee Kim , Woo Choel Noh , Ik Soo Kim , Jun Kwan Kim , Jinsub Kim , Yongjin Shin
Abstract: A semiconductor device including a substrate that includes a cell array region and a peripheral circuit region; a cell transistor on the cell array region of the substrate; a peripheral transistor on the peripheral circuit region of the substrate; a first interconnection layer connected to the cell transistor; a second interconnection layer connected to the peripheral transistor; an interlayer dielectric layer covering the first interconnection layer; and a blocking layer spaced apart from the first interconnection layer, the blocking layer covering a top surface and a sidewall of the second interconnection layer.
-
公开(公告)号：US11700726B2
公开(公告)日：2023-07-11
申请号：US17165539
申请日：2021-02-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin Sub Kim , Jun Kwan Kim , Woo Choel Noh , Kyoung-Hee Kim , Ik Soo Kim , Yong Jin Shin
IPC: H10B12/00 , H01L27/108
CPC classification number: H01L27/10814 , H01L27/10823 , H01L27/10852 , H01L27/10897
Abstract: A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric film extending on the lower electrode along a side surface of the lower electrode that is perpendicular to the substrate, an upper electrode on the capacitor dielectric film, an interface layer including a hydrogen blocking film and a hydrogen bypass film on the upper electrode, the hydrogen blocking film including a conductive material, and a contact plug penetrating the interface layer and electrically connected to the upper electrode.
-
公开(公告)号：US11563017B2
公开(公告)日：2023-01-24
申请号：US17099994
申请日：2020-11-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyoung-Hee Kim , Woo Choel Noh , Ik Soo Kim , Jun Kwan Kim , Jinsub Kim , Yongjin Shin
IPC: H01L27/11539 , H01L27/11519 , H01L27/11578 , H01L27/11565 , H01L27/11573 , H01L27/11551
Abstract: A semiconductor device including a substrate that includes a cell array region and a peripheral circuit region; a cell transistor on the cell array region of the substrate; a peripheral transistor on the peripheral circuit region of the substrate; a first interconnection layer connected to the cell transistor; a second interconnection layer connected to the peripheral transistor; an interlayer dielectric layer covering the first interconnection layer; and a blocking layer spaced apart from the first interconnection layer, the blocking layer covering a top surface and a sidewall of the second interconnection layer.
-
公开(公告)号：US09053948B2
公开(公告)日：2015-06-09
申请号：US14256232
申请日：2014-04-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyoung-Hee Kim , Ho-Ki Lee , Gilheyun Choi , Kyu-Hee Han , Jongwon Hong
IPC: H01L29/06 , H01L21/764 , H01L23/522 , H01L23/532
CPC classification number: H01L29/0649 , H01L21/764 , H01L21/7682 , H01L23/5222 , H01L23/53238 , H01L23/53266 , H01L23/5329 , H01L23/53295 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor device can include wiring lines on a substrate and an interlayer insulating structure, between ones of the wiring lines. The wiring lines can include a pore-containing layer that includes a plurality of pores extending away from a surface of the substrate, wherein ones of the pores have respective volumes that increase with a distance from the substrate until reaching an air gap layer above the pore-containing layer and beneath uppermost surfaces of the wiring lines.
Abstract translation: 半导体器件可以包括衬底上的布线和层间绝缘结构，在布线之间。 布线可以包括含孔层，其包括远离衬底表面延伸的多个孔，其中孔中的一些孔具有随着与衬底的距离而增加的体积，直到达到孔的上方的气隙层 并且在布线的最上表面之下。
-
-
-
-
-
Search Results
6
records
(took 0.027 seconds)
