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1.发明授权Driving method of memory controller and nonvolatile memory device controlled by memory controller 有权由存储器控制器控制的存储器控制器和非易失性存储器件的驱动方法公开(公告)号：US09594673B2
公开(公告)日：2017-03-14
申请号：US14523978
申请日：2014-10-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyungryun Kim , Seokjun Ham
CPC classification number: G06F12/0246 , G06F11/1048 , G06F2212/7211 , G11C29/52 , G11C2029/4402
Abstract: A method is for driving a memory controller which is configured to control a nonvolatile memory device. The method includes counting a number of error bits of read data provided from the nonvolatile memory device, determining a running average value using the number of error bits; and performing a wear leveling on the nonvolatile memory device using the running average value as a wear leveling index.
Abstract translation: 一种用于驱动被配置为控制非易失性存储器件的存储器控制器的方法。 该方法包括对从非易失性存储器件提供的读取数据的错误位数进行计数，使用错误位数确定运行平均值; 以及使用所述运行平均值作为磨损平衡指数，在所述非易失性存储装置上执行磨损均衡。
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