公开(公告)号：US20250137131A1

公开(公告)日：2025-05-01

申请号：US18670957

申请日：2024-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minju LEE ,  Daihong KIM ,  Sangho RHA ,  Juchan BANG ,  Seungjae SIM ,  Mingyu JEON

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/56

Abstract: A deposition apparatus includes: a chamber; a support unit within the chamber and including a chuck and a driving member, wherein a substrate is seated on the chuck, wherein the chuck has a first process position and a second process position, wherein the first process position is for processing the substrate in a first process, wherein the second process position is for processing the substrate in a second process, wherein the driving member moves the chuck between the first process position and the second process position; a showerhead supplying process gas toward the substrate, when the chuck is located in the first process position; a power supply unit supplying power to generate plasma between the chuck and the showerhead; and a first ultraviolet lamp disposed in the chamber and emitting ultraviolet rays toward the substrate, when the chuck is located in the second process position.

公开(公告)号：US20240213017A1

公开(公告)日：2024-06-27

申请号：US18228220

申请日：2023-07-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younghun SUNG ,  Sunhye HWANG ,  Sangho RHA ,  Seungjae SIM ,  Younseok CHOI ,  Byungkeun HWANG ,  Youn Joung CHO

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/50 ,  C23C16/56 ,  H01L21/311

CPC classification number: H01L21/02164 ,  C23C16/345 ,  C23C16/401 ,  C23C16/50 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31116 ,  H10B43/27

Abstract: A method of manufacturing an integrated circuit device, the method including forming a doped silicon oxide film on a substrate by supplying, onto the substrate, a silicon precursor, an oxidant, and at least two dopant sources including dopant elements that are different from each other such that the doped silicon oxide film includes at least two dopant elements; forming a vertical hole in the doped silicon oxide film by dry-etching the doped silicon oxide film; and forming a vertical structure in the vertical hole, wherein the silicon precursor includes a monosilane compound, a disilane compound, a siloxane compound, or a combination thereof, and the silicon precursor includes a Si—H functional group, and a C1-C10 oxy group or a C1-C10 organoamino group.