公开(公告)号：US20230043293A1

公开(公告)日：2023-02-09

申请号：US17715385

申请日：2022-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ilhan YUN ,  Sungki LEE ,  Suin KIM

IPC: H05K5/02

Abstract: A solid state drive case includes a lower cover having a sidewall defining an internal space. The sidewall includes a protrusion disposed on an end portion of the sidewall. An upper cover has a first surface directly contacting the sidewall of the lower cover and a second surface opposite to the first surface. The upper cover has a hole overlapping the protrusion and configured to receive the protrusion. A sealing label is attached to the second surface of the upper cover. The sealing label has an area that is less than an area of an entirety of the second surface of the cover. At least a portion of the sealing label is attached to an end portion of the protrusion.

公开(公告)号：US20230418222A1

公开(公告)日：2023-12-28

申请号：US18199035

申请日：2023-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungki LEE ,  Giljong KIM ,  Hakdoo KIM ,  Donggeun HUR ,  Yoonsu KIM

IPC: G03G21/20 ,  G03G15/10

CPC classification number: G03G21/206 ,  G03G15/10 ,  G03G2215/00379 ,  G03G2215/0658

Abstract: A developing apparatus includes a body; a buffer plate on the body and including a gas flow path; a vacuum plate on an upper surface of the buffer plate and having a gas supply hole in fluid communication with the gas flow path; and a slit block on an edge of the vacuum plate, the slit block and the vacuum plate forming a flow path for gas from the gas supply hole, wherein a substrate is holdable on the vacuum plate, a contact area between the substrate and the vacuum plate being 90% or more of an area of the substrate, the slit block and the vacuum plate form a buffer space and an inclined first flow path in fluid communication with the buffer space, and the slit block and an edge of the substrate forms a second flow path in fluid communication with the first flow path.

公开(公告)号：US20230197419A1

公开(公告)日：2023-06-22

申请号：US17969379

申请日：2022-10-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungki LEE ,  Jonggun YOON ,  Sungkyu CHOI

IPC: H01J37/32 ,  H01L21/687

CPC classification number: H01J37/32642 ,  H01L21/68742

Abstract: A ring assembly includes: an outer insulating ring on an upper outer periphery of a substrate stage; an edge ring on the outer insulating ring around a wafer seated on the substrate stage; and a shadow ring on the outer insulating ring and the edge ring to be movable up and down within a predetermined stroke range and to cover an edge region of the wafer. An upper surface of the edge ring is located higher than an upper surface of the wafer by a predetermined height. The shadow ring includes an annular body portion, and a recess in a bottom surface of the body portion to receive at least a portion of a protruding upper portion of the edge ring. The shadow ring is spaced apart from the outer insulating ring and the edge ring by a predetermined distance to form a flow path for gas flow therebetween.

公开(公告)号：US20220132701A1

公开(公告)日：2022-04-28

申请号：US17342995

申请日：2021-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungki LEE ,  Jiyong KIM ,  Insub KWAK ,  Suin KIM ,  Chunghyun RYU

IPC: H05K7/20 ,  H05K5/02 ,  H05K1/02 ,  G06F1/18

Abstract: A semiconductor device includes a first case, a second case coupled to the first case to form an inner space, a memory module disposed within the inner space, and including a module substrate and a plurality of electronic components mounted on the module substrate, and a heat dissipation chamber assembly provided in at least a portion of the first case, and including a heat diffusion chamber in thermal contact with at least one of the electronic components and a sidewall structure extending vertically toward the module substrate to surround the electronic component in thermal contact with the heat diffusion chamber.