公开(公告)号：US20180138292A1

公开(公告)日：2018-05-17

申请号：US15349382

申请日：2016-11-11

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Alvaro Padilla ,  Bijesh Rajamohanan

IPC: H01L29/66 ,  H01L27/24 ,  H01L27/115 ,  H01L45/00

CPC classification number: H01L45/16 ,  H01L27/2454 ,  H01L27/249 ,  H01L45/04 ,  H01L45/06 ,  H01L45/10 ,  H01L45/1226 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

Abstract: A method is provided that includes forming a bit line above a substrate, forming a word line above the substrate, and forming a non-volatile memory cell between the bit line and the word line. The non-volatile memory cell includes a non-volatile memory material coupled in series with an isolation element. The isolation element includes a first portion disposed between a first electrode and a second electrode, the first electrode includes a first material having a first work function, the second electrode includes a second material having second work function, and the first work function does not equal the second work function.

公开(公告)号：US10340449B2

公开(公告)日：2019-07-02

申请号：US15611029

申请日：2017-06-01

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Ming-Che Wu ,  Alvaro Padilla ,  Tanmay Kumar

IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00

Abstract: A resistive memory device, such as a BMC ReRAM device, includes at least one resistive memory element which contains a carbon barrier material portion and a resistive memory material portion that is disposed between a first electrode and a second electrode.