公开(公告)号：US20230307027A1

公开(公告)日：2023-09-28

申请号：US17656306

申请日：2022-03-24

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Alan KALITSOV ,  Derek STEWART ,  Ananth KAUSHIK ,  Gerardo BERTERO

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01F10/32 ,  G01R33/09 ,  H01L27/22

CPC classification number: G11C11/161 ,  H01L43/08 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/10 ,  H01F10/3286 ,  G01R33/093 ,  H01L27/222

Abstract: A magnetoresistive memory cell includes a magnetoresistive layer stack containing a reference layer, a nonmagnetic spacer layer, and a free layer. A ferroelectric material layer having two stable ferroelectric states is coupled to a strain-modulated ferromagnetic layer to alter a sign of magnetic exchange coupling between the strain-modulated ferromagnetic layer and the free layer. The strain-modulated ferromagnetic layer may be the reference layer or a perpendicular magnetic anisotropy layer that is located proximate to the ferroelectric material layer. The magnetoresistive memory cell may be configured as a three-terminal device or as a two-terminal device, and may be configured as a tunneling magnetoresistance (TMR) device or as a giant magnetoresistance (GMR) device.

公开(公告)号：US20230307028A1

公开(公告)日：2023-09-28

申请号：US17656310

申请日：2022-03-24

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Alan KALITSOV ,  Derek STEWART ,  Ananth KAUSHIK ,  Gerardo BERTERO

IPC: G11C11/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  H01L27/22 ,  G01R33/09

CPC classification number: G11C11/161 ,  H01F10/3286 ,  G11C11/1675 ,  G11C11/1673 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  H01L27/222 ,  G01R33/093

Abstract: A magnetoresistive memory cell includes a magnetoresistive layer stack containing a reference layer, a nonmagnetic spacer layer, and a free layer. A ferroelectric material layer having two stable ferroelectric states is coupled to a strain-modulated ferromagnetic layer to alter a sign of magnetic exchange coupling between the strain-modulated ferromagnetic layer and the free layer. The strain-modulated ferromagnetic layer may be the reference layer or a perpendicular magnetic anisotropy layer that is located proximate to the ferroelectric material layer. The magnetoresistive memory cell may be configured as a three-terminal device or as a two-terminal device, and may be configured as a tunneling magnetoresistance (TMR) device or as a giant magnetoresistance (GMR) device.