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1.发明公开公开(公告)号：US20230307028A1
公开(公告)日：2023-09-28
申请号：US17656310
申请日：2022-03-24
发明人： Alan KALITSOV , Derek STEWART , Ananth KAUSHIK , Gerardo BERTERO
CPC分类号： G11C11/161 , H01F10/3286 , G11C11/1675 , G11C11/1673 , H01L43/08 , H01L43/10 , H01L43/02 , H01L27/222 , G01R33/093
摘要： A magnetoresistive memory cell includes a magnetoresistive layer stack containing a reference layer, a nonmagnetic spacer layer, and a free layer. A ferroelectric material layer having two stable ferroelectric states is coupled to a strain-modulated ferromagnetic layer to alter a sign of magnetic exchange coupling between the strain-modulated ferromagnetic layer and the free layer. The strain-modulated ferromagnetic layer may be the reference layer or a perpendicular magnetic anisotropy layer that is located proximate to the ferroelectric material layer. The magnetoresistive memory cell may be configured as a three-terminal device or as a two-terminal device, and may be configured as a tunneling magnetoresistance (TMR) device or as a giant magnetoresistance (GMR) device.
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2.发明公开公开(公告)号：US20230307027A1
公开(公告)日：2023-09-28
申请号：US17656306
申请日：2022-03-24
发明人： Alan KALITSOV , Derek STEWART , Ananth KAUSHIK , Gerardo BERTERO
CPC分类号： G11C11/161 , H01L43/08 , G11C11/1673 , G11C11/1675 , H01L43/02 , H01L43/10 , H01F10/3286 , G01R33/093 , H01L27/222
摘要： A magnetoresistive memory cell includes a magnetoresistive layer stack containing a reference layer, a nonmagnetic spacer layer, and a free layer. A ferroelectric material layer having two stable ferroelectric states is coupled to a strain-modulated ferromagnetic layer to alter a sign of magnetic exchange coupling between the strain-modulated ferromagnetic layer and the free layer. The strain-modulated ferromagnetic layer may be the reference layer or a perpendicular magnetic anisotropy layer that is located proximate to the ferroelectric material layer. The magnetoresistive memory cell may be configured as a three-terminal device or as a two-terminal device, and may be configured as a tunneling magnetoresistance (TMR) device or as a giant magnetoresistance (GMR) device.
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3.发明申请公开(公告)号：US20200233047A1
公开(公告)日：2020-07-23
申请号：US16250403
申请日：2019-01-17
发明人： Alan KALITSOV , Derek STEWART , Gerardo BERTERO
摘要： A magnetoresistive memory device includes a magnetic-exchange-coupled layer stack containing a free layer, a reference layer and an electrically conductive, non-magnetic interlayer exchange coupling layer located between the free layer and the reference layer, and an insulating spacer layer located in a series connection with the magnetic-exchange-coupled layer stack between a first electrode and a second electrode. The first electrode and the second electrode are configured to provide a programming voltage across the magnetic-exchange-coupled layer stack and the insulating spacer layer.
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