MEMORY SCALING SEMICONDUCTOR DEVICE

    公开(公告)号:US20210104493A1

    公开(公告)日:2021-04-08

    申请号:US16594716

    申请日:2019-10-07

    Abstract: A semiconductor device is disclosed including a memory module formed from a pair of semiconductor dies mounted face to face to each other at the wafer level. These die pairs are formed using wafer-to-wafer bonding technology, where the wafers may be bonded to each other when they are of full thickness. Once bonded, respective inactive surfaces of the wafers may be thinned and then the die pairs diced from the wafers to form a completed memory module. When the wafers are bonded face to face, they compensate each other, mechanically resulting in the die pair having a minimum warpage.

    Memory scaling semiconductor device

    公开(公告)号:US11444062B2

    公开(公告)日:2022-09-13

    申请号:US17244527

    申请日:2021-04-29

    Abstract: A semiconductor device is disclosed including a memory module formed from a pair of semiconductor dies mounted face to face to each other at the wafer level. These die pairs are formed using wafer-to-wafer bonding technology, where the wafers may be bonded to each other when they are of full thickness. Once bonded, respective inactive surfaces of the wafers may be thinned and then the die pairs diced from the wafers to form a completed memory module. When the wafers are bonded face to face, they compensate each other, mechanically resulting in the die pair having a minimum warpage.

    MEMORY SCALING SEMICONDUCTOR DEVICE

    公开(公告)号:US20210249385A1

    公开(公告)日:2021-08-12

    申请号:US17244527

    申请日:2021-04-29

    Abstract: A semiconductor device is disclosed including a memory module formed from a pair of semiconductor dies mounted face to face to each other at the wafer level. These die pairs are formed using wafer-to-wafer bonding technology, where the wafers may be bonded to each other when they are of full thickness. Once bonded, respective inactive surfaces of the wafers may be thinned and then the die pairs diced from the wafers to form a completed memory module. When the wafers are bonded face to face, they compensate each other, mechanically resulting in the die pair having a minimum warpage.

    Memory scaling semiconductor device

    公开(公告)号:US11004829B2

    公开(公告)日:2021-05-11

    申请号:US16594716

    申请日:2019-10-07

    Abstract: A semiconductor device is disclosed including a memory module formed from a pair of semiconductor dies mounted face to face to each other at the wafer level. These die pairs are formed using wafer-to-wafer bonding technology, where the wafers may be bonded to each other when they are of full thickness. Once bonded, respective inactive surfaces of the wafers may be thinned and then the die pairs diced from the wafers to form a completed memory module. When the wafers are bonded face to face, they compensate each other, mechanically resulting in the die pair having a minimum warpage.

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