公开(公告)号：US11094674B2

公开(公告)日：2021-08-17

申请号：US16816466

申请日：2020-03-12

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Nagesh Vodrahalli ,  Shrikar Bhagath ,  Rama Shukla

IPC: H01L25/065 ,  H01L23/00 ,  H01L25/00

Abstract: A semiconductor device is disclosed including a memory module formed from a pair of semiconductor dies mounted face to face to each other at the wafer level, mechanically resulting in the die pair having a minimum warpage. An electronic component may be bonded to an exposed surface of one of the semiconductor dies.

公开(公告)号：US11011500B2

公开(公告)日：2021-05-18

申请号：US16816495

申请日：2020-03-12

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Nagesh Vodrahalli ,  Shrikar Bhagath ,  Chih Yang Li ,  Srinivasan Sivaram ,  Rama Shukla

IPC: H01L25/065 ,  H01L23/00 ,  H01L25/00

Abstract: A semiconductor device is disclosed including a memory module formed from a pair of semiconductor dies mounted face to face to each other at the wafer level. These die pairs are formed using wafer-to-wafer bonding technology, where the wafers may be bonded to each other when they are of full thickness. The semiconductor device may further include a CMOS logic circuit as part of the pair of semiconductor dies or in its own semiconductor die mounted to the pair of semiconductor dies.

公开(公告)号：US10290354B1

公开(公告)日：2019-05-14

申请号：US15799666

申请日：2017-10-31

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Daniel Linnen ,  Srikar Peesari ,  Kirubakaran Periyannan ,  Avinash Rajagiri ,  Shantanu Gupta ,  Jagdish Sabde ,  Ashish Ghai ,  Deepak Bharadwaj ,  Sukhminder Singh Lobana ,  Shrikar Bhagath

IPC: G11C5/06 ,  G11C16/10 ,  H01L27/11573 ,  H01L27/11529 ,  G11C16/04

Abstract: A partial memory die is missing one or more components. One example of a partial memory die includes an incomplete memory structure such that the partial memory die is configured to successfully perform programming, erasing and reading of the incomplete memory structure.

公开(公告)号：US20210104495A1

公开(公告)日：2021-04-08

申请号：US16816495

申请日：2020-03-12

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Nagesh Vodrahalli ,  Shrikar Bhagath ,  Chih Yang Li ,  Srinivasan Sivaram ,  Rama Shukla

IPC: H01L25/065 ,  H01L23/00 ,  H01L25/00

Abstract: A semiconductor device is disclosed including a memory module formed from a pair of semiconductor dies mounted face to face to each other at the wafer level. These die pairs are formed using wafer-to-wafer bonding technology, where the wafers may be bonded to each other when they are of full thickness. The semiconductor device may further include a CMOS logic circuit as part of the pair of semiconductor dies or in its own semiconductor die mounted to the pair of semiconductor dies.

公开(公告)号：US20210104494A1

公开(公告)日：2021-04-08

申请号：US16816466

申请日：2020-03-12

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Nagesh Vodrahalli ,  Shrikar Bhagath ,  Rama Shukla

IPC: H01L25/065 ,  H01L23/00 ,  H01L25/00

Abstract: A semiconductor device is disclosed including a memory module formed from a pair of semiconductor dies mounted face to face to each other at the wafer level, mechanically resulting in the die pair having a minimum warpage. An electronic component may be bonded to an exposed surface of one of the semiconductor dies.

公开(公告)号：US20190130978A1

公开(公告)日：2019-05-02

申请号：US15799666

申请日：2017-10-31

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Daniel Linnen ,  Srikar Peesari ,  Kirubakaran Periyannan ,  Avinash Rajagiri ,  Shantanu Gupta ,  Jagdish Sabde ,  Ashish Ghai ,  Deepak Bharadwaj ,  Sukhminder Singh Lobana ,  Shrikar Bhagath

IPC: G11C16/10 ,  G11C16/04 ,  H01L27/11529 ,  H01L27/11573

Abstract: A partial memory die is missing one or more components. One example of a partial memory die includes an incomplete memory structure such that the partial memory die is configured to successfully perform programming, erasing and reading of the incomplete memory structure.