公开(公告)号：US09583196B2

公开(公告)日：2017-02-28

申请号：US14607408

申请日：2015-01-28

Applicant: SanDisk Technologies LLC

Inventor： Ariel Navon ,  Eran Sharon ,  Alexander Bazarsky ,  Noam Presman

IPC: G11C11/34 ,  G11C16/10 ,  G11C16/34 ,  G11C16/12 ,  G11C29/02

CPC classification number: G11C16/10 ,  G11C16/12 ,  G11C16/3427 ,  G11C16/3486 ,  G11C29/021 ,  G11C29/028

Abstract: A system and method of programming user data into a memory cell includes receiving a first user data to be programmed in a memory controller, selecting a memory cell for programming the first user data and measuring at least one health characteristic of the selected memory cell. At least one programming parameter of the selected memory cell is adjusted and the first user data is programmed to the selected memory cell using the adjusted programming parameter corresponding to the selected memory cell.

Abstract translation: 将用户数据编程到存储器单元中的系统和方法包括：接收要在存储器控制器中编程的第一用户数据，选择用于编程第一用户数据的存储单元并测量所选存储单元的至少一个健康特性。 调整所选存储单元的至少一个编程参数，并且使用对应于所选择的存储单元的经调整的编程参数将第一用户数据编程到所选存储单元。

公开(公告)号：US10074427B2

公开(公告)日：2018-09-11

申请号：US14539033

申请日：2014-11-12

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Idan Alrod ,  Noam Presman ,  Ariel Navon ,  Tz-Yi Liu ,  Tianhong Yan

IPC: G11C13/00 ,  G11C7/10

CPC classification number: G11C13/0097 ,  G11C7/1006 ,  G11C13/0033 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0085 ,  G11C2213/77

Abstract: A method includes, in a data storage device including a resistive memory, receiving, from an external device, an erase command to erase a portion of the resistive memory. The method further includes storing shaped data at the portion of the resistive memory responsive to the erase command. Shaped data is configured to control an amount of leakage current during a read and/or write operation at one or more storage elements that are adjacent to at least one storage element of the portion of the resistive memory.