公开(公告)号：US20220262805A1

公开(公告)日：2022-08-18

申请号：US17176829

申请日：2021-02-16

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Shogo TOMITA ,  Shinsuke YADA

IPC: H01L27/1157 ,  H01L23/522 ,  H01L23/528 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11582

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, memory opening fill structures including a respective vertical semiconductor channel and a respective vertical stack of memory elements extending through the alternating stack in a memory array region, via contact structures contacting the stepped surfaces of the electrically conductive layers at each step in a staircase region, and a vertical stack of access transistors located between the staircase region and the memory array region.

公开(公告)号：US20230417687A1

公开(公告)日：2023-12-28

申请号：US17808674

申请日：2022-06-24

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Shogo TOMITA ,  Tatsuya HINOUE ,  Michiaki SANO

IPC: G01N23/18 ,  G01N23/083 ,  G01N23/20 ,  H01L21/66

CPC classification number: G01N23/18 ,  G01N23/083 ,  G01N23/20 ,  H01L22/12 ,  G01N2223/6116 ,  G01N2223/646 ,  G01N2223/401 ,  H01L27/11556

Abstract: Systems and methods for non-destructive inspection of semiconductor devices, such as three-dimensional NAND memory device, using reflective X-ray microscope computed tomographic (CT) imaging. An X-ray microscope directs a focused beam of X-ray radiation at an oblique angle onto the surface of a semiconductor wafer such that the beam passes through device structures and at least a portion of the beam is reflected by a semiconductor substrate of the wafer and detected by an X-ray detector. The wafer may be rotated about a rotation axis to obtain X-ray images of a region-of-interest (ROI) at different projection angles. A processing unit uses detected X-ray image data obtained by the X-ray detector at the different projection angles to generate a CT reconstructed image of the ROI. The CT reconstructed image may enable inspection of internal structural features, including embedded defects, in the semiconductor device in a non-destructive manner