SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD

    公开(公告)号:US20220139738A1

    公开(公告)日:2022-05-05

    申请号:US17515737

    申请日:2021-11-01

    Abstract: The inventive concept relates to a substrate treating apparatus including a process chamber having a first and a second body, a support unit supporting a substrate, a heating unit heats the substrate, a driver moves any one of the first body and the second body, an interval state detection unit that detects an interval state between a side wall of the first body and a side wall of the second body when the first and the second body are placed in a process location, and a controller that controls the driver and the interval state detection unit, wherein the interval state detection unit includes a pressure provision line that provides a positive pressure or a negative pressure between the side wall of the first body and the side wall of the second body, and a pressure measurement member that measures a change in a pressure of the pressure provision line.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20240184208A1

    公开(公告)日:2024-06-06

    申请号:US18523881

    申请日:2023-11-30

    Inventor: Hyun Min KIM

    CPC classification number: G03F7/16 H01L21/67017

    Abstract: Proposed is a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes a process chamber configured to have a processing space therein, a support unit configured to support a substrate within the processing space, a gas supply unit configured to supply a processing gas to the processing space, and an exhaust unit configured to exhaust the processing space, wherein the gas supply unit may vaporize a processing fluid in a liquid state by using at least one of a bubbling method and a blowing method and supply the processing fluid to the processing space.

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