公开(公告)号：US11977332B2

公开(公告)日：2024-05-07

申请号：US17017786

申请日：2020-09-11

Applicant: SEMES CO., LTD. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Hae-Won Choi ,  Yerim Yeon ,  Anton Koriakin ,  Kihoon Choi ,  Youngran Ko ,  Jeong Ho Cho ,  Hyungseok Kang ,  Hong Gi Min

IPC: G03F7/16 ,  G03F7/039 ,  G03F7/32 ,  H01L21/67

CPC classification number: G03F7/162 ,  G03F7/168 ,  H01L21/67225 ,  G03F7/039 ,  G03F7/322

Abstract: A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a first process chamber to apply an organic solvent to a substrate applied with a developer and introduced, and a second process chamber to treat the substrate applied with the organic solvent and introduced, through a supercritical fluid.

公开(公告)号：US20230369081A1

公开(公告)日：2023-11-16

申请号：US18197677

申请日：2023-05-15

Applicant: SEMES CO., LTD.

Inventor： Haewon Choi ,  Anton Koriakin ,  Joonho Won ,  Hyungseok Kang ,  Minwoo Kim

IPC: H01L21/67 ,  H01L21/475

CPC classification number: H01L21/6715 ,  H01L21/6704 ,  H01L21/475 ,  H01L21/67167

Abstract: Provided is an apparatus for processing a substrate, the apparatus including: a processing chamber configured to provide a processing space; a fluid supply device configured to supply a supercritical fluid to the processing chamber; a fluid discharge device configured to discharge the supercritical fluid from the processing chamber; and a control device configured to control operations of the fluid supply device and the fluid discharge device, wherein the fluid supply device includes a first supply line connected to an upper portion of the processing chamber and a second supply line connected to a lower portion of the processing chamber, and the control device is configured to perform a plurality of first cycles in which the supercritical fluid is alternately supplied into the processing space through the first supply line and the second supply line to boost pressure in the processing space to a set pressure.