Apparatus and method for treating substrate

    公开(公告)号:US10529594B2

    公开(公告)日:2020-01-07

    申请号:US15793263

    申请日:2017-10-25

    Abstract: Embodiments of the inventive concept relate to an apparatus for treating a substrate in a high-pressure atmosphere. The apparatus includes a process chamber having an upper body and a lower body that are combined with each other to provide a treatment space therein, an elevation member configured to elevate any one of the upper body and the lower body to an opening location at which the upper body and the lower body is spaced apart or a closing location at which the upper body and the lower body is attached, a clamping member configured to clamp the upper body and the lower body located at the closing location, and a movable member configured to move the clamping member to a locking location at which the clamping member clamps the process chamber or to the release location at which the clamping member is spaced apart from the process chamber.

    APPARATUS FOR PROCESSING SUBSTRATE AND SEMICONDUCTOR MANUFACTURING APPARATUS INCLUDING THE SAME

    公开(公告)号:US20230369081A1

    公开(公告)日:2023-11-16

    申请号:US18197677

    申请日:2023-05-15

    CPC classification number: H01L21/6715 H01L21/6704 H01L21/475 H01L21/67167

    Abstract: Provided is an apparatus for processing a substrate, the apparatus including: a processing chamber configured to provide a processing space; a fluid supply device configured to supply a supercritical fluid to the processing chamber; a fluid discharge device configured to discharge the supercritical fluid from the processing chamber; and a control device configured to control operations of the fluid supply device and the fluid discharge device, wherein the fluid supply device includes a first supply line connected to an upper portion of the processing chamber and a second supply line connected to a lower portion of the processing chamber, and the control device is configured to perform a plurality of first cycles in which the supercritical fluid is alternately supplied into the processing space through the first supply line and the second supply line to boost pressure in the processing space to a set pressure.

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