公开(公告)号：US09208996B2

公开(公告)日：2015-12-08

申请号：US14077746

申请日：2013-11-12

Applicant: SEN Corporation

Inventor： Mitsukuni Tsukihara ,  Mitsuaki Kabasawa

IPC: H01J37/317 ,  H01J37/302

CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J2237/0455 ,  H01J2237/047 ,  H01J2237/30472

Abstract: An ion implantation apparatus includes a beamline device for transporting ions from an ion source to an implantation processing chamber. The implantation processing chamber includes a workpiece holder for mechanically scanning a workpiece with respect to a beam irradiation region. The beamline device may be operated under a first implantation setting configuration suitable for transport of a low energy/high current beam for high-dose implantation into the workpiece, or a second implantation setting configuration suitable for transport of a high energy/low current beam for low-dose implantation into the workpiece. A beam center trajectory being a reference in a beamline is equal from the ion source to the implantation processing chamber in the first implantation setting configuration and the second implantation setting configuration.

Abstract translation: 离子注入装置包括用于将离子从离子源输送到注入处理室的束线装置。 植入处理室包括用于相对于束照射区域机械地扫描工件的工件保持器。 束线装置可以在适合于将高能量/高电流束输送到工件中的低能量/高电流束的第一注入设置配置下运行，或者适于传输高能/低电流束的第二注入设置配置 低剂量注入工件。 在第一植入设置配置和第二植入设置配置中，在束线中作为参考的束中心轨迹从离子源到注入处理室相等。

公开(公告)号：US20130092825A1

公开(公告)日：2013-04-18

申请号：US13653211

申请日：2012-10-16

Applicant: SEN Corporation

Inventor： Shiro NINOMIYA ,  Mitsukuni Tsukihara ,  Tetsuya Kudo ,  Tatsuya Yamada

IPC: H01L21/265

CPC classification number: H01J37/26 ,  H01J37/3023 ,  H01J37/304 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/18 ,  H01J2237/30472 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: During ion implantation into a wafer, an ion beam current is measured, a change in vacuum conductance which changes in accordance with a change of the location of a structure operating in a vacuum beam line chamber or a vacuum treatment chamber is obtained, furthermore, changes in degree of vacuum at one or plural places are detected using a vacuum gauge installed in the vacuum beam line chamber or the vacuum treatment chamber. The amount of an ion beam current is corrected using the obtained vacuum conductance and the detected degree of vacuum at one or plural places, and the dose amount implanted into the wafer is controlled.

Abstract translation: 在离子注入晶片期间，测量离子束电流，获得根据在真空束线室或真空处理室中操作的结构的位置的变化而变化的真空电导的变化，此外，改变 使用安装在真空束室或真空处理室中的真空计检测一个或多个位置的真空度。 使用获得的真空电导和一个或多个位置处的检测到的真空度来校正离子束电流的量，并且控制注入到晶片中的剂量。

公开(公告)号：US08759801B2

公开(公告)日：2014-06-24

申请号：US13653211

申请日：2012-10-16

Applicant: SEN Corporation

Inventor： Shiro Ninomiya ,  Mitsukuni Tsukihara ,  Tetsuya Kudo ,  Tatsuya Yamada

IPC: G21K5/04 ,  H01J37/26 ,  H01J37/317

CPC classification number: H01J37/26 ,  H01J37/3023 ,  H01J37/304 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/18 ,  H01J2237/30472 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: During ion implantation into a wafer, an ion beam current is measured, a change in vacuum conductance which changes in accordance with a change of the location of a structure operating in a vacuum beam line chamber or a vacuum treatment chamber is obtained, furthermore, changes in degree of vacuum at one or plural places are detected using a vacuum gauge installed in the vacuum beam line chamber or the vacuum treatment chamber. The amount of an ion beam current is corrected using the obtained vacuum conductance and the detected degree of vacuum at one or plural places, and the dose amount implanted into the wafer is controlled.

Abstract translation: 在离子注入晶片期间，测量离子束电流，获得根据在真空束线室或真空处理室中操作的结构的位置的变化而变化的真空电导的变化，此外，改变 使用安装在真空束室或真空处理室中的真空计检测一个或多个位置的真空度。 使用获得的真空电导和一个或多个位置处的检测到的真空度来校正离子束电流的量，并且控制注入到晶片中的剂量。

公开(公告)号：US20140134833A1

公开(公告)日：2014-05-15

申请号：US14077746

申请日：2013-11-12

Applicant: SEN Corporation

Inventor： Mitsukuni Tsukihara ,  Mitsuaki Kabasawa

IPC: H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/302 ,  H01J2237/0455 ,  H01J2237/047 ,  H01J2237/30472

Abstract: An ion implantation apparatus includes a beamline device for transporting ions from an ion source to an implantation processing chamber. The implantation processing chamber includes a workpiece holder for mechanically scanning a workpiece with respect to a beam irradiation region. The beamline device may be operated under a first implantation setting configuration suitable for transport of a low energy/high current beam for high-dose implantation into the workpiece, or a second implantation setting configuration suitable for transport of a high energy/low current beam for low-dose implantation into the workpiece. A beam center trajectory being a reference in a beamline is equal from the ion source to the implantation processing chamber in the first implantation setting configuration and the second implantation setting configuration.

Abstract translation: 离子注入装置包括用于将离子从离子源输送到注入处理室的束线装置。 植入处理室包括用于相对于束照射区域机械地扫描工件的工件保持器。 束线装置可以在适合于将高能量/高电流束输送到工件中的低能量/高电流束的第一注入设置配置下运行，或者适于传输高能/低电流束的第二注入设置配置 低剂量注入工件。 在第一植入设置配置和第二植入设置配置中，在束线中作为参考的束中心轨迹从离子源到注入处理室相等。