公开(公告)号：US09646837B2

公开(公告)日：2017-05-09

申请号：US13710174

申请日：2012-12-10

申请人： SEN Corporation

发明人： Shiro Ninomiya ,  Yasuharu Okamoto ,  Masaki Ishikawa ,  Takeshi Kurose ,  Akihiro Ochi

IPC分类号： H01J37/304 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01L21/265 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30477 ,  H01J2237/30488

摘要： An ion implantation method includes transporting ions to a wafer as an ion beam, causing the wafer to undergo wafer mechanical slow scanning and also causing the ion beam to undergo beam fast scanning or causing the wafer to undergo wafer mechanical fast scanning in a direction perpendicular to a wafer slow scanning direction, irradiating the wafer with the ion beam by using the wafer slow scanning in the wafer slow scanning direction and the beam fast scanning of the ion beam or the wafer fast scanning of the wafer in the direction perpendicular to the wafer slow scanning direction, measuring a two-dimensional beam shape of the ion beam before ion implantation into the wafer, and defining an implantation and irradiation region of the ion beam by using the measured two-dimensional beam shape to thereby regulate the implantation and irradiation region.

公开(公告)号：US09153406B2

公开(公告)日：2015-10-06

申请号：US14582696

申请日：2014-12-24

申请人： SEN Corporation

发明人： Masateru Sato

IPC分类号： H01J27/02 ,  H01J27/08 ,  H01J37/08

CPC分类号： H01J27/08 ,  H01J27/022 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/082

摘要： An ion generator includes: an arc chamber; a repeller that includes a repeller plate provided within the arc chamber and a repeller extension portion inserted through a through hole communicating the inside and the outside of the arc chamber; and a supporting structure that is provided outside the arc chamber and that supports the repeller so that a gap is ensured between the repeller extension portion and an inner wall of the through hole. The supporting structure includes a cover member that forms, outside the arc chamber, a small chamber communicating with the gap, and an insulation member that electrically insulates the arc chamber and the repeller from each other.

摘要翻译： 离子发生器包括：电弧室; 包括设置在所述电弧室内的推斥板的推斥器和通过连通所述电弧室的内部和外部的通孔插入的推斥板延伸部; 以及支撑结构，其设置在电弧室外部并且支撑推斥板，使得在排斥器延伸部分和通孔的内壁之间保证间隙。 支撑结构包括在电弧室外形成与间隙连通的小室的盖构件和使电弧室和排斥体彼此电绝缘的绝缘构件。

公开(公告)号：US09117627B2

公开(公告)日：2015-08-25

申请号：US14468787

申请日：2014-08-26

申请人： SEN Corporation

发明人： Kazuhisa Manabe ,  Takanori Yagita

IPC分类号： H01J37/00 ,  H01J37/24 ,  H01L21/265 ,  H01J37/317

CPC分类号： H01J37/243 ,  H01J37/3171 ,  H01J2237/047 ,  H01J2237/30472 ,  H01L21/265

摘要： An ion implantation apparatus includes an implantation processing chamber, a high voltage unit, and a high-voltage power supply system. In the implantation processing chamber ions are implanted into a workpiece. The high voltage unit includes an ion source unit for generating the ions, and a beam transport unit provided between the ion source unit and the implantation processing chamber. The high-voltage power supply system applies a potential to the high voltage unit under any one of a plurality of energy settings. The high-voltage power supply system includes a plurality of current paths formed such that a beam current flowing into the workpiece is returned to the ion source unit, and each of the plurality of energy settings is associated with a corresponding one of the plurality of current paths.

摘要翻译： 离子注入装置包括注入处理室，高压单元和高压电源系统。 在植入处理室中将离子注入工件中。 高电压单元包括用于产生离子的离子源单元和设置在离子源单元和注入处理室之间的束输送单元。 高压电源系统在多个能量设定中的任意一个下向高压单元施加电位。 高电压电源系统包括多个电流路径，其形成为流入工件的射束电流返回到离子源单元，并且多个能量设置中的每一个与多个电流中的相应一个电流相关联 路径。

公开(公告)号：US20150129775A1

公开(公告)日：2015-05-14

申请号：US14536946

申请日：2014-11-10

申请人： SEN Corporation

发明人： Masateru Sato

IPC分类号： H01J27/08 ,  H01J37/317

CPC分类号： H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/31705

摘要： An ion generator is provided with: an arc chamber that is at least partially made up of a material containing carbon; a thermal electron emitter that emits thermal electrons into the arc chamber; and a gas introducer that introduces a source gas and a compound gas into the arc chamber. The source gas to be introduced into the arc chamber contains a halide gas, and the compound gas to be introduced into the arc chamber contains a compound having carbon atoms and hydrogen atoms.

摘要翻译： 离子发生器具有：至少部分由含碳材料组成的电弧室; 将热电子发射到电弧室中的热电子发射体; 以及将源气体和复合气体引入电弧室的气体导入器。 被引入电弧室的源气体含有卤化物气体，导入电弧室的化合物气体含有具有碳原子和氢原子的化合物。

公开(公告)号：US08987690B2

公开(公告)日：2015-03-24

申请号：US14287767

申请日：2014-05-27

申请人： SEN Corporation

发明人： Mitsuaki Kabasawa ,  Kazuhiro Watanabe ,  Haruka Sasaki ,  Kouji Kato ,  Hitoshi Ando

IPC分类号： H01J37/317 ,  H01J37/20 ,  C23C14/48 ,  H01J37/30 ,  H01J37/05 ,  A61N5/10 ,  G21K1/10

CPC分类号： H01J37/3172 ,  A61N5/1044 ,  G21K1/10 ,  H01J37/05 ,  H01J37/09 ,  H01J37/3007 ,  H01J37/3171

摘要： A high-energy ion implanter includes a beam generation unit that includes an ion source and a mass analyzer, a high-energy multi-stage linear acceleration unit, a high-energy beam deflection unit that changes the direction of a high-energy ion beam toward a wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy beam collimator, and a high-energy final energy filter. Further, the high-energy beam collimator is an electric field type beam collimator that collimates a scan beam while performing the acceleration and the deceleration of a high-energy beam by an electric field.

摘要翻译： 高能离子注入机包括一个束生成单元，它包括一个离子源和一个质量分析器，一个高能多级线性加速单元，一个改变高能离子束方向的高能束偏转单元 以及将偏转的高能离子束传送到晶片的光束传送单元。 光束传输单元包括光束整形器，高能束扫描器，高能束准直仪和高能最终能量滤光器。 此外，高能量射束准直仪是在通过电场执行加速度和高能量光束的减速的同时准直扫描光束的电场型光束准直仪。

公开(公告)号：US20150064888A1

公开(公告)日：2015-03-05

申请号：US14468844

申请日：2014-08-26

申请人： SEN Corporation

发明人： Takanori Yagita ,  Mitsuaki Kabasawa ,  Haruka Sasaki

IPC分类号： H01J37/24 ,  H01J37/10 ,  H01L21/265 ,  H01J37/317

CPC分类号： H01J37/243 ,  H01J37/3171 ,  H01J2237/047 ,  H01J2237/10 ,  H01J2237/30472

摘要： An ion implantation apparatus includes a beam parallelizing unit and a third power supply unit. The beam parallelizing unit includes an acceleration lens, and a deceleration lens disposed adjacent to the acceleration lens in an ion beam transportation direction. The third power supply unit operates the beam parallelizing unit under one of a plurality of energy settings. The plurality of energy settings includes a first energy setting suitable for transport of a low energy ion, and a second energy setting suitable for transport of a high energy ion beam. The third power supply unit is configured to generate a potential difference in at least the acceleration lens under the second energy setting, and generate a potential difference in at least the deceleration lens under the first energy setting. A curvature of the deceleration lens is smaller than a curvature of the acceleration lens.

摘要翻译： 离子注入装置包括光束并联单元和第三电源单元。 光束并行化单元包括加速透镜和在离子束输送方向上与加速透镜相邻设置的减速透镜。 第三电源单元在多个能量设置之一下操作光束并联单元。 多个能量设置包括适于运输低能量离子的第一能量设定和适于运输高能离子束的第二能量设定。 第三电源单元被配置为在第二能量设定下至少在加速透镜中产生电位差，并且在第一能量设定下产生至少减速透镜的电位差。 减速透镜的曲率小于加速度透镜的曲率。

公开(公告)号：US08759801B2

公开(公告)日：2014-06-24

申请号：US13653211

申请日：2012-10-16

申请人： SEN Corporation

发明人： Shiro Ninomiya ,  Mitsukuni Tsukihara ,  Tetsuya Kudo ,  Tatsuya Yamada

IPC分类号： G21K5/04 ,  H01J37/26 ,  H01J37/317

CPC分类号： H01J37/26 ,  H01J37/3023 ,  H01J37/304 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/18 ,  H01J2237/30472 ,  H01J2237/31701 ,  H01J2237/31703

摘要： During ion implantation into a wafer, an ion beam current is measured, a change in vacuum conductance which changes in accordance with a change of the location of a structure operating in a vacuum beam line chamber or a vacuum treatment chamber is obtained, furthermore, changes in degree of vacuum at one or plural places are detected using a vacuum gauge installed in the vacuum beam line chamber or the vacuum treatment chamber. The amount of an ion beam current is corrected using the obtained vacuum conductance and the detected degree of vacuum at one or plural places, and the dose amount implanted into the wafer is controlled.

摘要翻译： 在离子注入晶片期间，测量离子束电流，获得根据在真空束线室或真空处理室中操作的结构的位置的变化而变化的真空电导的变化，此外，改变 使用安装在真空束室或真空处理室中的真空计检测一个或多个位置的真空度。 使用获得的真空电导和一个或多个位置处的检测到的真空度来校正离子束电流的量，并且控制注入到晶片中的剂量。

公开(公告)号：US20140150723A1

公开(公告)日：2014-06-05

申请号：US14096735

申请日：2013-12-04

申请人： SEN Corporation

发明人： Mitsuaki Kabasawa ,  Kazuhiro Watanabe ,  Hitoshi Ando ,  Kouji Inada ,  Tatsuya Yamada

IPC分类号： C23C14/48

CPC分类号： H01J37/32412 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/057 ,  H01J2237/10

摘要： An ion implantation apparatus includes: a plurality of units for accelerating an ion beam generated in an ion source; and a plurality of units for adjusting a scan beam and implanting ions into a wafer. A horizontal U-shaped folder type beamline having opposite long straight portions includes the plurality of units for adjusting the scan beam in a long straight portion to have substantially the same length as the ion source and the plurality of units for accelerating the ion beam.

摘要翻译： 离子注入装置包括：用于加速在离子源中产生的离子束的多个单元; 以及用于调整扫描光束并将离子注入晶片的多个单元。 具有相对的长直线部分的水平U形折叠型光束线包括多个单元，用于将长直线部分中的扫描光束调整为具有与离子源大致相同的长度和用于加速离子束的多个单元。

公开(公告)号：US20140134833A1

公开(公告)日：2014-05-15

申请号：US14077746

申请日：2013-11-12

申请人： SEN Corporation

发明人： Mitsukuni Tsukihara ,  Mitsuaki Kabasawa

IPC分类号： H01L21/265

CPC分类号： H01J37/3171 ,  H01J37/302 ,  H01J2237/0455 ,  H01J2237/047 ,  H01J2237/30472

摘要： An ion implantation apparatus includes a beamline device for transporting ions from an ion source to an implantation processing chamber. The implantation processing chamber includes a workpiece holder for mechanically scanning a workpiece with respect to a beam irradiation region. The beamline device may be operated under a first implantation setting configuration suitable for transport of a low energy/high current beam for high-dose implantation into the workpiece, or a second implantation setting configuration suitable for transport of a high energy/low current beam for low-dose implantation into the workpiece. A beam center trajectory being a reference in a beamline is equal from the ion source to the implantation processing chamber in the first implantation setting configuration and the second implantation setting configuration.

摘要翻译： 离子注入装置包括用于将离子从离子源输送到注入处理室的束线装置。 植入处理室包括用于相对于束照射区域机械地扫描工件的工件保持器。 束线装置可以在适合于将高能量/高电流束输送到工件中的低能量/高电流束的第一注入设置配置下运行，或者适于传输高能/低电流束的第二注入设置配置 低剂量注入工件。 在第一植入设置配置和第二植入设置配置中，在束线中作为参考的束中心轨迹从离子源到注入处理室相等。

公开(公告)号：US20140065737A1

公开(公告)日：2014-03-06

申请号：US14013862

申请日：2013-08-29

申请人： SEN Corporation

发明人： Shiro Ninomiya ,  Tadanobu Kagawa ,  Toshio Yumiyama ,  Akira Funai ,  Takashi Kuroda

IPC分类号： H01L21/66 ,  C23C14/48

CPC分类号： H01L22/14 ,  C23C14/48 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/0206

摘要： Provided is an ion implantation method of transporting ions generated by an ion source to a wafer and implanting the ions into the wafer by irradiating an ion beam on the wafer, including, during the ion implantation into the wafer, using a plurality of detection units which can detect an event having a possibility of discharge and determining a state of the ion beam based on existence of detected event having a possibility of discharge and a degree of influence of the event on the ion beam.

摘要翻译： 提供了一种将由离子源产生的离子输送到晶片并且通过在晶片上照射离子束将离子注入晶片的离子注入方法，包括在离子注入晶片期间使用多个检测单元， 可以基于具有放电可能性的检测事件的存在和事件对离子束的影响程度来检测具有放电可能性的事件和确定离子束的状态。