公开(公告)号：US20140235042A1

公开(公告)日：2014-08-21

申请号：US14259889

申请日：2014-04-23

Applicant: SEN Corporation

Inventor： Shiro NINOMIYA ,  Tetsuya Kudo ,  Akihiro Ochi

IPC: H01L21/265 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01L21/265 ,  C23C14/48 ,  C23C14/542 ,  H01J37/3007 ,  H01J37/3023 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/30483

Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.

Abstract translation: 离子注入方法包括：对离子束进行往复扫描，在与离子束扫描方向垂直的方向上机械地扫描晶片，将离子注入到晶片中，以及在各向同性圆形圆片的晶片表面产生离子注入量分布， 通过控制离子束扫描方向上的光束扫描速度和机械扫描方向上的晶片扫描速度，同时独立地使用限定速度校正的各个控制功能来校正其他半导体制造工艺中的晶片表面的不均匀性 金额

公开(公告)号：US20130196492A1

公开(公告)日：2013-08-01

申请号：US13748288

申请日：2013-01-23

Applicant: Sen Corporation

Inventor： Shiro NINOMIYA ,  Yasuharu Okamoto ,  Toshio Yumiyama ,  Akihiro Ochi

IPC: H01L21/265

CPC classification number: H01L21/265 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/20228

Abstract: On a plane of a semiconductor wafer, two types of in-plane regions comprising full-width non-ion-implantation regions and partial ion implantation regions, which are alternately arranged one or more times in a direction orthogonal to a scanning direction of an ion beam are created. During the creation of the partial ion implantation regions, reciprocating scanning using the ion beam can be repeated until the target dose can be satisfied while performing or stopping ion beam radiation onto the semiconductor wafer in a state in which the semiconductor wafer can be fixed. During the creation of the full-width non-ion-implantation regions, the semiconductor wafer can be moved without performing the ion beam radiation onto the semiconductor wafer. Then, by repeating fixing and movement of the semiconductor wafer plural times, ion implantation regions and non-ion-implantation regions are created in desired regions of the semiconductor wafer.

Abstract translation: 在半导体晶片的平面上，包括全长非离子注入区域和部分离子注入区域的两种类型的面内区域在与离子的扫描方向正交的方向上交替排列一次或多次 梁被创建。 在部分离子注入区域的创建期间，可以重复使用离子束的往复扫描，直到在可以固定半导体晶片的状态下执行或停止对半导体晶片的离子束辐射的同时满足目标剂量。 在全宽非离子注入区域的创建期间，可以移动半导体晶片而不对半导体晶片执行离子束辐射。 然后，通过重复半导体晶片的固定和移动多次，在半导体晶片的期望区域中产生离子注入区域和非离子注入区域。

公开(公告)号：US20130157390A1

公开(公告)日：2013-06-20

申请号：US13710174

申请日：2012-12-10

Applicant: SEN Corporation

Inventor： Shiro NINOMIYA ,  Yasuharu Okamoto ,  Masaki Ishikawa ,  Takeshi Kurose ,  Akihiro Ochi

IPC: H01L21/265

CPC classification number: H01L21/265 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30477 ,  H01J2237/30488

Abstract: An ion implantation method includes transporting ions to a wafer as an ion beam, causing the wafer to undergo wafer mechanical slow scanning and also causing the ion beam to undergo beam fast scanning or causing the wafer to undergo wafer mechanical fast scanning in a direction perpendicular to a wafer slow scanning direction, irradiating the wafer with the ion beam by using the wafer slow scanning in the wafer slow scanning direction and the beam fast scanning of the ion beam or the wafer fast scanning of the wafer in the direction perpendicular to the wafer slow scanning direction, measuring a two-dimensional beam shape of the ion beam before ion implantation into the wafer, and defining an implantation and irradiation region of the ion beam by using the measured two-dimensional beam shape to thereby regulate the implantation and irradiation region.

Abstract translation: 离子注入方法包括将离子作为离子束输送到晶片，导致晶片经历晶片机械慢扫描，并且还使得离子束经历光束快速扫描或使得晶片在垂直于晶体的方向上进行晶片机械快速扫描 晶片缓慢的扫描方向，通过在晶片慢速扫描方向上使用晶片慢扫描和离子束的光束快速扫描或晶片在垂直于晶片的方向快速扫描缓慢扫描离子束照射晶片 扫描方向，在离子注入晶片之前测量离子束的二维束形状，并且通过使用测量的二维光束形状限定离子束的注入和照射区域，从而调节注入和照射区域。

公开(公告)号：US20170148633A1

公开(公告)日：2017-05-25

申请号：US15424470

申请日：2017-02-03

Applicant: SEN CORPORATION

Inventor： Shiro NINOMIYA ,  Tetsuya KUDO

IPC: H01L21/265 ,  C23C14/54 ,  C23C14/48

CPC classification number: H01L21/26586 ,  C23C14/48 ,  C23C14/54 ,  H01J37/3171 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/30483 ,  H01J2237/3171

Abstract: An ion implantation method in which an ion beam is scanned in a beam scanning direction and a wafer is mechanically scanned in a direction perpendicular to the beam scanning direction, includes setting a wafer rotation angle with respect to the ion beam so as to be varied, wherein a set angle of the wafer rotation angle is changed in a stepwise manner so as to implant ions into the wafer at each set eagle, and wherein a wafer scanning region length is set to be varied, and, at the same time, a beam scanning speed of the ion beam is changed, in ion implantation at each set angle in a plurality of ion implantation operations during one rotation of the wafer, such that the ions are implanted into the wafer and dose amount non-uniformity in a wafer surface in other semiconductor manufacturing processes is corrected.

公开(公告)号：US20130092825A1

公开(公告)日：2013-04-18

申请号：US13653211

申请日：2012-10-16

Applicant: SEN Corporation

Inventor： Shiro NINOMIYA ,  Mitsukuni Tsukihara ,  Tetsuya Kudo ,  Tatsuya Yamada

IPC: H01L21/265

CPC classification number: H01J37/26 ,  H01J37/3023 ,  H01J37/304 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/18 ,  H01J2237/30472 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: During ion implantation into a wafer, an ion beam current is measured, a change in vacuum conductance which changes in accordance with a change of the location of a structure operating in a vacuum beam line chamber or a vacuum treatment chamber is obtained, furthermore, changes in degree of vacuum at one or plural places are detected using a vacuum gauge installed in the vacuum beam line chamber or the vacuum treatment chamber. The amount of an ion beam current is corrected using the obtained vacuum conductance and the detected degree of vacuum at one or plural places, and the dose amount implanted into the wafer is controlled.

Abstract translation: 在离子注入晶片期间，测量离子束电流，获得根据在真空束线室或真空处理室中操作的结构的位置的变化而变化的真空电导的变化，此外，改变 使用安装在真空束室或真空处理室中的真空计检测一个或多个位置的真空度。 使用获得的真空电导和一个或多个位置处的检测到的真空度来校正离子束电流的量，并且控制注入到晶片中的剂量。