公开(公告)号：US08759801B2

公开(公告)日：2014-06-24

申请号：US13653211

申请日：2012-10-16

Applicant: SEN Corporation

Inventor： Shiro Ninomiya ,  Mitsukuni Tsukihara ,  Tetsuya Kudo ,  Tatsuya Yamada

IPC: G21K5/04 ,  H01J37/26 ,  H01J37/317

CPC classification number: H01J37/26 ,  H01J37/3023 ,  H01J37/304 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/18 ,  H01J2237/30472 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: During ion implantation into a wafer, an ion beam current is measured, a change in vacuum conductance which changes in accordance with a change of the location of a structure operating in a vacuum beam line chamber or a vacuum treatment chamber is obtained, furthermore, changes in degree of vacuum at one or plural places are detected using a vacuum gauge installed in the vacuum beam line chamber or the vacuum treatment chamber. The amount of an ion beam current is corrected using the obtained vacuum conductance and the detected degree of vacuum at one or plural places, and the dose amount implanted into the wafer is controlled.

Abstract translation: 在离子注入晶片期间，测量离子束电流，获得根据在真空束线室或真空处理室中操作的结构的位置的变化而变化的真空电导的变化，此外，改变 使用安装在真空束室或真空处理室中的真空计检测一个或多个位置的真空度。 使用获得的真空电导和一个或多个位置处的检测到的真空度来校正离子束电流的量，并且控制注入到晶片中的剂量。

公开(公告)号：US09165772B2

公开(公告)日：2015-10-20

申请号：US14259889

申请日：2014-04-23

Applicant: SEN Corporation

Inventor： Shiro Ninomiya ,  Tetsuya Kudo ,  Akihiro Ochi

IPC: H01L21/66 ,  G01R31/26 ,  H01L21/265 ,  C23C14/48 ,  C23C14/54 ,  H01J37/302 ,  H01J37/317 ,  H01J37/30

CPC classification number: H01L21/265 ,  C23C14/48 ,  C23C14/542 ,  H01J37/3007 ,  H01J37/3023 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/30483

Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.

Abstract translation: 离子注入方法包括：对离子束进行往复扫描，在与离子束扫描方向垂直的方向上机械地扫描晶片，将离子注入到晶片中，以及在各向同性圆形圆片的晶片表面产生离子注入量分布， 通过控制离子束扫描方向上的光束扫描速度和机械扫描方向上的晶片扫描速度，同时独立地使用限定速度校正的各个控制功能来校正其他半导体制造工艺中的晶片表面的不均匀性 金额

公开(公告)号：US20130092825A1

公开(公告)日：2013-04-18

申请号：US13653211

申请日：2012-10-16

Applicant: SEN Corporation

Inventor： Shiro NINOMIYA ,  Mitsukuni Tsukihara ,  Tetsuya Kudo ,  Tatsuya Yamada

IPC: H01L21/265

CPC classification number: H01J37/26 ,  H01J37/3023 ,  H01J37/304 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/18 ,  H01J2237/30472 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: During ion implantation into a wafer, an ion beam current is measured, a change in vacuum conductance which changes in accordance with a change of the location of a structure operating in a vacuum beam line chamber or a vacuum treatment chamber is obtained, furthermore, changes in degree of vacuum at one or plural places are detected using a vacuum gauge installed in the vacuum beam line chamber or the vacuum treatment chamber. The amount of an ion beam current is corrected using the obtained vacuum conductance and the detected degree of vacuum at one or plural places, and the dose amount implanted into the wafer is controlled.

Abstract translation: 在离子注入晶片期间，测量离子束电流，获得根据在真空束线室或真空处理室中操作的结构的位置的变化而变化的真空电导的变化，此外，改变 使用安装在真空束室或真空处理室中的真空计检测一个或多个位置的真空度。 使用获得的真空电导和一个或多个位置处的检测到的真空度来校正离子束电流的量，并且控制注入到晶片中的剂量。

公开(公告)号：US20140235042A1

公开(公告)日：2014-08-21

申请号：US14259889

申请日：2014-04-23

Applicant: SEN Corporation

Inventor： Shiro NINOMIYA ,  Tetsuya Kudo ,  Akihiro Ochi

IPC: H01L21/265 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01L21/265 ,  C23C14/48 ,  C23C14/542 ,  H01J37/3007 ,  H01J37/3023 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/30483

Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.

Abstract translation: 离子注入方法包括：对离子束进行往复扫描，在与离子束扫描方向垂直的方向上机械地扫描晶片，将离子注入到晶片中，以及在各向同性圆形圆片的晶片表面产生离子注入量分布， 通过控制离子束扫描方向上的光束扫描速度和机械扫描方向上的晶片扫描速度，同时独立地使用限定速度校正的各个控制功能来校正其他半导体制造工艺中的晶片表面的不均匀性 金额