公开(公告)号：US20150084061A1

公开(公告)日：2015-03-26

申请号：US14496998

申请日：2014-09-25

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ki Yon PARK ,  Hwa Mok KIM ,  Kyu-Ho LEE ,  Sung Hyun LEE ,  Hyung Kyu KIM

IPC: H01L31/108 ,  H01L31/18 ,  H01L31/0304

CPC classification number: H01L31/108 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/1848 ,  H01L31/1856 ,  Y02E10/544 ,  Y02P70/521

Abstract: A photo-detecting device includes a first nitride layer, a low-current blocking layer disposed on the first nitride layer, a light absorption layer disposed on the low-current blocking layer, and a Schottky junction layer disposed on the light-absorption layer. The low-current blocking layer includes a multilayer structure.

Abstract translation: 光检测装置包括第一氮化物层，设置在第一氮化物层上的低电流阻挡层，设置在低电流阻挡层上的光吸收层和设置在光吸收层上的肖特基结层。 低电流阻挡层包括多层结构。

公开(公告)号：US20160276516A1

公开(公告)日：2016-09-22

申请号：US15168159

申请日：2016-05-30

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Ki Yon PARK ,  Hwa Mok KIM ,  Kyu Ho LEE ,  Sung Hyun LEE ,  Hyung Kyu KIM

IPC: H01L31/09 ,  H01L31/0304 ,  H01L31/18 ,  H01L31/108

CPC classification number: H01L31/09 ,  H01L31/022408 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/108 ,  H01L31/1848 ,  H01L31/1852 ,  H01L31/1856 ,  Y02E10/544

Abstract: An ultraviolet (UV) photo-detecting device, including: a substrate; a first nitride layer disposed on the substrate; a second nitride layer disposed between the first nitride layer and the substrate; a light absorption layer disposed on the first nitride layer; and a Schottky junction layer disposed on the light absorption layer.

Abstract translation: 一种紫外线（UV）光检测装置，包括：基板; 设置在所述基板上的第一氮化物层; 设置在第一氮化物层和衬底之间的第二氮化物层; 设置在所述第一氮化物层上的光吸收层; 以及设置在光吸收层上的肖特基结层。

公开(公告)号：US20160043263A1

公开(公告)日：2016-02-11

申请号：US14922946

申请日：2015-10-26

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ki Yon PARK ,  Hwa Mok KIM ,  Kyu Ho LEE ,  Sung Hyun LEE ,  Hyung Kyu KIM

IPC: H01L31/108 ,  H01L31/0232 ,  H01L31/0304

CPC classification number: H01L31/108 ,  H01L31/02322 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/1013 ,  H01L31/1848 ,  H01L31/1856 ,  Y02E10/544

Abstract: A photo-detecting device includes a first nitride layer, a light absorption layer disposed on the first nitride layer, and a Schottky junction layer disposed on the light absorption layer. According to a photoluminescence (PL) properties measurement of the photo-detecting device, a first peak light intensity is greater than a second peak light intensity, and the first peak light intensity is a peak light intensity of light emitted from the light absorption layer, and the second peak light intensity is a peak light intensity of light emitted from the first nitride layer.

Abstract translation: 光检测装置包括第一氮化物层，设置在第一氮化物层上的光吸收层和设置在光吸收层上的肖特基结层。 根据光检测装置的光致发光（PL）特性测量，第一峰值光强度大于第二峰值光强度，第一峰值光强度是从光吸收层发射的光的峰值光强度， 并且第二峰值光强度是从第一氮化物层发射的光的峰值光强度。

公开(公告)号：US20150115318A1

公开(公告)日：2015-04-30

申请号：US14584732

申请日：2014-12-29

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ki Yon PARK ,  Hwa Mok KIM ,  Kyu Ho LEE ,  Sung Hyun LEE ,  Hyung Kyu KIM

IPC: H01L31/0304 ,  H01L31/11

CPC classification number: H01L31/03048 ,  H01L31/022408 ,  H01L31/03044 ,  H01L31/108 ,  H01L31/11 ,  H01L31/1848 ,  H01L31/1852 ,  H01L31/1856 ,  Y02E10/544

Abstract: An ultraviolet (UV) photo-detecting device, including: a first nitride layer; a secondary light absorption layer disposed on the first nitride layer; a primary light absorption layer disposed on the secondary light absorption layer; and a Schottky junction layer disposed on the primary light absorption layer. The secondary light absorption layer includes a nitride layer having lower band-gap energy than the primary light absorption layer.

Abstract translation: 一种紫外线（UV）光检测装置，包括：第一氮化物层; 设置在所述第一氮化物层上的次级光吸收层; 设置在次光吸收层上的初级光吸收层; 以及设置在初级光吸收层上的肖特基结层。 二次光吸收层包括具有比初级光吸收层低的带隙能量的氮化物层。