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    METHOD OF FABRICATING A NITRIDE SUBSTRATE
    2.
    发明申请
    METHOD OF FABRICATING A NITRIDE SUBSTRATE 有权
    制备氮化物基板的方法

    公开(公告)号：US20150364319A1

    公开(公告)日：2015-12-17

    申请号：US14833732

    申请日：2015-08-24

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Ki Yon PARK ,  Hwa Mok KIM ,  Chang Suk HAN ,  Hyo Shik CHOI ,  Mi So KO

    IPC: H01L21/02 ,  H01L21/308 ,  H01L29/20 ,  H01L21/306

    CPC classification number: H01L21/0254 ,  C30B25/00 ,  C30B25/02 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02002 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/30621 ,  H01L21/3081 ,  H01L21/3086 ,  H01L29/2003

    Abstract: A method of fabricating a nitride substrate including preparing a growth substrate and disposing a sacrificial layer on the growth substrate. The sacrificial layer includes a nitride horizontal etching layer including an indium-based nitride and an upper nitride sacrificial layer formed on the nitride horizontal etching layer. The method of fabricating the nitride substrate also includes horizontally etching the nitride horizontal etching layer, forming at least one etching hole at least partially through the upper nitride sacrificial layer such that the at least one etching hole expands in the nitride horizontal etching layer in a horizontal direction during horizontal etching of the nitride horizontal etching layer, forming a nitride epitaxial layer on the upper nitride sacrificial layer by hydride vapor phase epitaxy (HVPE) and separating the nitride epitaxial layer from the growth substrate at the nitride horizontal etching layer.

    Abstract translation: 一种制造氮化物衬底的方法，包括制备生长衬底并在生长衬底上设置牺牲层。 牺牲层包括氮化物水平蚀刻层，其包括形成在氮化物水平蚀刻层上的铟基氮化物和上部氮化物牺牲层。 制造氮化物衬底的方法还包括水平蚀刻氮化物水平蚀刻层，至少部分地通过上部氮化物牺牲层形成至少一个蚀刻孔，使得至少一个蚀刻孔在氮化物水平蚀刻层中在水平方向上扩展 在氮化物水平蚀刻层的水平蚀刻期间，通过氢化物气相外延（HVPE）在上部氮化物牺牲层上形成氮化物外延层，并在氮化物水平蚀刻层从生长衬底分离氮化物外延层。

    LIGHT DETECTION DEVICE
    3.
    发明申请
    LIGHT DETECTION DEVICE 审中-公开
    光检测装置

    公开(公告)号：US20150349192A1

    公开(公告)日：2015-12-03

    申请号：US14825581

    申请日：2015-08-13

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Ki Yon PARK ,  Hwa Mok KIM ,  Young Hwan SON ,  Daewoong SUH

    IPC: H01L31/18 ,  H01L31/108

    CPC classification number: H01L31/1828 ,  H01L31/022483 ,  H01L31/03529 ,  H01L31/0392 ,  H01L31/108 ,  H01L31/1832 ,  Y02E10/50 ,  Y02E10/52

    Abstract: A method of forming a light detection device includes forming a non-porous layer on a substrate, forming a light absorption layer on the non-porous layer, the light absorption layer including pores formed in a surface thereof, forming a Schottky layer on the surface of the light absorption layer and in the pores thereof, and forming a first electrode layer on the Schottky layer.

    Abstract translation: 形成光检测装置的方法包括在基板上形成无孔层，在无孔层上形成光吸收层，所述光吸收层包括在其表面形成的孔，在表面上形成肖特基层 的光吸收层，并且在其孔中，并且在肖特基层上形成第一电极层。

    NEAR UV LIGHT EMITTING DEVICE
    6.
    发明申请
    NEAR UV LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：US20160225950A1

    公开(公告)日：2016-08-04

    申请号：US15096252

    申请日：2016-04-11

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Chang Suk HAN ,  Hwa Mok KIM ,  Hyo Shik CHOI ,  Mi So KO ,  A Ram Cha LEE

    IPC: H01L33/14 ,  H01L33/32 ,  H01L33/06

    CPC classification number: H01L33/14 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32

    Abstract: Disclosed is a near UV light emitting device. The light emitting device includes an n-type contact layer, a p-type contact layer, an active area of a multi-quantum well structure disposed between the n-type contact layer and the p-type contact layer, and at least one electron control layer disposed between the n-type contact layer and the active area. Each of the n-type contact layer and the p-type contact layer includes an AlInGaN or AlGaN layer, and the electron control layer is formed of AlInGaN or AlGaN. In addition, the electron control layer contains a larger amount of Al than adjacent layers to obstruct flow of electrons moving into the active area. Accordingly, electron mobility is deteriorated, thereby improving recombination rate of electrons and holes in the active area.

    SEMICONDUCTOR PHOTO-DETECTING DEVICE
    10.
    发明申请
    SEMICONDUCTOR PHOTO-DETECTING DEVICE 有权
    半导体光电检测器件

    公开(公告)号：US20160043263A1

    公开(公告)日：2016-02-11

    申请号：US14922946

    申请日：2015-10-26

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Ki Yon PARK ,  Hwa Mok KIM ,  Kyu Ho LEE ,  Sung Hyun LEE ,  Hyung Kyu KIM

    IPC: H01L31/108 ,  H01L31/0232 ,  H01L31/0304

    CPC classification number: H01L31/108 ,  H01L31/02322 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/1013 ,  H01L31/1848 ,  H01L31/1856 ,  Y02E10/544

    Abstract: A photo-detecting device includes a first nitride layer, a light absorption layer disposed on the first nitride layer, and a Schottky junction layer disposed on the light absorption layer. According to a photoluminescence (PL) properties measurement of the photo-detecting device, a first peak light intensity is greater than a second peak light intensity, and the first peak light intensity is a peak light intensity of light emitted from the light absorption layer, and the second peak light intensity is a peak light intensity of light emitted from the first nitride layer.

    Abstract translation: 光检测装置包括第一氮化物层，设置在第一氮化物层上的光吸收层和设置在光吸收层上的肖特基结层。 根据光检测装置的光致发光（PL）特性测量，第一峰值光强度大于第二峰值光强度，第一峰值光强度是从光吸收层发射的光的峰值光强度， 并且第二峰值光强度是从第一氮化物层发射的光的峰值光强度。

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