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    SEMICONDUCTOR LIGHT EMITTING DEVICE
    1.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：US20180182921A1

    公开(公告)日：2018-06-28

    申请号：US15851468

    申请日：2017-12-21

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Seong Kyu JANG ,  Ju Yong PARK ,  Kyu Ho LEE ,  Joon Hee LEE

    IPC: H01L33/40 ,  H01L33/38 ,  H01L33/32 ,  H01L33/62

    CPC classification number: H01L33/405 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

    Abstract: A semiconductor light emitting device includes a first semiconductor layer, an active layer disposed on the first semiconductor layer to emit ultraviolet light, a second semiconductor layer disposed on the active layer, and a first electrode disposed on the first semiconductor layer and being in Ohmic contact with a portion of the first semiconductor layer, the first electrode including a contact electrode including aluminum (Al) and at least one other material and having a first region adjacent to the first semiconductor layer and a second region, with each region having an Al composition ratio defined by the amount of Al relative to the amount of the at least one other material, wherein the Al composition ratio of the first region is greater than the Al composition ratio of the second region, and a metal layer disposed on the contact electrode.

    ULTRAVIOLET LIGHT EMITTING DIODE
    2.
    发明申请
    ULTRAVIOLET LIGHT EMITTING DIODE 有权

    公开(公告)号：US20210074887A1

    公开(公告)日：2021-03-11

    申请号：US17099499

    申请日：2020-11-16

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Ju Yong PARK ,  Seong Gyu JANG ,  Kyu Ho LEE ,  Joon Hee LEE

    IPC: H01L33/38 ,  H01L33/62 ,  H01L33/00 ,  H01L33/24

    Abstract: An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; a mesa disposed on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer contacting the n-type semiconductor layer; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a plurality of branches, the n-ohmic contact layer surrounds the mesa and is disposed in a region between the branches, each of the n-bump and the p-bump covers an upper surface and a side surface of the mesa, and the p-bump covers at least two of the branches among the plurality of branches. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.

    ULTRAVIOLET LIGHT-EMITTING DEVICE
    3.
    发明申请
    ULTRAVIOLET LIGHT-EMITTING DEVICE 审中-公开

    公开(公告)号：US20180366613A1

    公开(公告)日：2018-12-20

    申请号：US16069665

    申请日：2017-01-11

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Seong Kyu JANG ,  Hong Suk CHO ,  Kyu Ho LEE ,  Chi Hyun IN

    IPC: H01L33/02 ,  H01L33/38 ,  H01L33/48 ,  H01L23/00 ,  H01L33/46

    CPC classification number: H01L33/02 ,  H01L24/81 ,  H01L33/38 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L33/46 ,  H01L33/48 ,  H01L33/62 ,  H01L2924/12041

    Abstract: An ultraviolet light-emitting device including a substrate, a first conductive type semiconductor layer disposed on the substrate, a mesa disposed on the first conductive type semiconductor layer and including a second conductive type semiconductor layer and an active layer disposed between the semiconductor layers, a first contact electrode contacting the exposed first conductive type semiconductor layer around the mesa, a second contact electrode contacting the second conductive type semiconductor layer on the mesa, a passivation layer covering the first contact electrode, the mesa, and the second contact electrode and having openings disposed above the first and second contact electrodes, and first and second bump electrodes electrically connected to the first and second contact electrodes through the openings of the passivation layer, in which the mesa has depressions in plan view, and the first and second bump electrodes cover the openings and a portion of the passivation layer.

    LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE PACKAGE
    4.
    发明申请
    LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE PACKAGE 审中-公开
    发光二极管和发光二极管封装

    公开(公告)号：US20160343911A1

    公开(公告)日：2016-11-24

    申请号：US15226304

    申请日：2016-08-02

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Hyeon CHAE ,  Jong Min JANG ,  Won Young ROH ,  Daewoong SUH ,  Dae Sung CHO ,  Joon Sup LEE ,  Kyu Ho LEE ,  Chi Hyun IN

    IPC: H01L33/40 ,  H01L33/46 ,  H01L33/42 ,  H01L33/20 ,  H01L33/32 ,  H01L33/12

    CPC classification number: H01L33/405 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/12 ,  H01L33/14 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058

    Abstract: A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer.

    Abstract translation: 一种发光二极管，包括第一导电类型半导体层，设置在第一导电类型半导体层上的台面，包括有源层和第二导电类型半导体层的台面，设置在台面上并被配置为欧姆的反射电极 与第二导电型半导体层接触，设置在台面和反射电极上的电流扩散层，电流扩展层包括构造成与第一导电类型半导体层的上表面欧姆接触的第一部分， 与设置在第一和第二n接触区域之间的台面的第二n接触区域间隔开的第一n接触区域以及包括在第一和第二n-接触区域之间暴露反射电极的第一开口的绝缘层 。 第一和第二n接触区域具有暴露第一导电类型半导体层的第二开口。

    SEMICONDUCTOR PHOTO-DETECTING DEVICE
    6.
    发明申请
    SEMICONDUCTOR PHOTO-DETECTING DEVICE 有权
    半导体光电检测器件

    公开(公告)号：US20160043263A1

    公开(公告)日：2016-02-11

    申请号：US14922946

    申请日：2015-10-26

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Ki Yon PARK ,  Hwa Mok KIM ,  Kyu Ho LEE ,  Sung Hyun LEE ,  Hyung Kyu KIM

    IPC: H01L31/108 ,  H01L31/0232 ,  H01L31/0304

    CPC classification number: H01L31/108 ,  H01L31/02322 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/1013 ,  H01L31/1848 ,  H01L31/1856 ,  Y02E10/544

    Abstract: A photo-detecting device includes a first nitride layer, a light absorption layer disposed on the first nitride layer, and a Schottky junction layer disposed on the light absorption layer. According to a photoluminescence (PL) properties measurement of the photo-detecting device, a first peak light intensity is greater than a second peak light intensity, and the first peak light intensity is a peak light intensity of light emitted from the light absorption layer, and the second peak light intensity is a peak light intensity of light emitted from the first nitride layer.

    Abstract translation: 光检测装置包括第一氮化物层，设置在第一氮化物层上的光吸收层和设置在光吸收层上的肖特基结层。 根据光检测装置的光致发光（PL）特性测量，第一峰值光强度大于第二峰值光强度，第一峰值光强度是从光吸收层发射的光的峰值光强度， 并且第二峰值光强度是从第一氮化物层发射的光的峰值光强度。

    LIGHT EMITTING DIODE ASSEMBLY AND METHOD FOR FABRICATING THE SAME
    7.
    发明申请
    LIGHT EMITTING DIODE ASSEMBLY AND METHOD FOR FABRICATING THE SAME 审中-公开
    发光二极管组件及其制造方法

    公开(公告)号：US20150287900A1

    公开(公告)日：2015-10-08

    申请号：US14744969

    申请日：2015-06-19

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Kyu Ho LEE ,  Chang Hoon KIM ,  Jae Ryang CHOI ,  Dae Woong SUH

    IPC: H01L33/62 ,  H01L33/46 ,  H01L33/00 ,  H01L33/32 ,  H01L33/06 ,  H01L33/40

    CPC classification number: H01L33/62 ,  H01L24/17 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01L2924/01029 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

    Abstract: A method of manufacturing a light-emitting diode (LED) chip including forming an LED on a first substrate, the LED including an N-type and a P-type semiconductor layer, the LED being formed to expose surfaces of the N-type and P-type semiconductor layers, forming bumps respectively electrically connected to the N-type and P-type semiconductor layers, forming electrode pads corresponding to the bumps on a second substrate, aligning the LED chip and the second substrate so that the bumps respectively correspond to the electrode pads, and increasing a temperature of the bumps to a first temperature, applying a pressure to the first and second substrates, and increasing the temperature of the bumps to a second temperature for a first time period while maintaining the pressure, and maintaining the second temperature from the first time period to a second time period while maintaining the pressure, and then releasing the pressure and cooling the bumps.

    Abstract translation: 一种制造包括在第一基板上形成LED的发光二极管（LED）芯片的方法，所述LED包括N型和P型半导体层，所述LED形成为暴露所述N型和 形成分别电连接到N型和P型半导体层的凸块，形成与第二衬底上的凸块相对应的电极焊盘，使LED芯片和第二衬底对准，使得凸起分别对应于 电极焊盘，并且将凸块的温度升高到第一温度，向第一和第二基板施加压力，并且在保持压力的同时将凸块的温度第一时间提高到第二温度，并且保持 第二温度从第一时间段到第二时间段同时保持压力，然后释放压力并冷却凸块。

    LIGHT EMITTING DEVICE
    9.
    发明申请
    LIGHT EMITTING DEVICE 有权

    公开(公告)号：US20250048785A1

    公开(公告)日：2025-02-06

    申请号：US18923666

    申请日：2024-10-22

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Seong Kyu JANG ,  Hong Suk CHO ,  Kyu Ho LEE ,  Chi Hyun IN

    IPC: H01L33/02 ,  H01L23/00 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/46 ,  H01L33/48 ,  H01L33/62

    Abstract: A light emitting device including a substrate, a first conductivity-type semiconductor layer, a mesa including a second conductivity-type semiconductor layer and an active layer, first and second contact electrodes respectively contacting the first and second conductivity-type semiconductor layers, a passivation layer covering the first and second contact electrodes, the mesa, and including first and second openings, and first and second bump electrodes electrically connected to the first and second contact electrodes, respectively, in which the first and second bump electrodes are disposed on the mesa, the passivation layer is disposed between the first bump electrode and the second contact electrode, the first contact electrode includes a reflective material, and a portion of the first opening is surrounded with a side surface of the mesa, and another portion of the first opening is not surrounded with the side surface of the mesa.

    DEEP UV LIGHT EMITTING DIODE
    10.
    发明公开
    DEEP UV LIGHT EMITTING DIODE 审中-公开

    公开(公告)号：US20240222562A1

    公开(公告)日：2024-07-04

    申请号：US18584432

    申请日：2024-02-22

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Tae Gyun KIM ,  Kyu Ho LEE

    IPC: H01L33/38 ,  H01L33/46 ,  H01L33/62

    CPC classification number: H01L33/382 ,  H01L33/46 ,  H01L33/62

    Abstract: A deep UV light emitting diode includes a substrate, an n-type semiconductor layer located on the substrate, a mesa disposed on the n-type semiconductor layer, and including an active layer and a p-type semiconductor layer, an n-ohmic contact layer in contact with the n-type semiconductor layer, a p-ohmic contact layer in contact with the p-type semiconductor layer, an n-bump electrically connected to the n-ohmic contact layer, and a p-bump electrically connected to the p-ohmic contact layer. The mesa includes a plurality of vias exposing a first conductivity type semiconductor layer.

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