公开(公告)号：US10111313B2

公开(公告)日：2018-10-23

申请号：US13847130

申请日：2013-03-19

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Takeharu Motokawa ,  Tokuhisa Ooiwa ,  Kensuke Demura ,  Tomoaki Yoshimori ,  Makoto Karyu ,  Yoshihisa Kase ,  Hidehito Azumano

IPC: H01L21/00 ,  C23C16/00 ,  H05H1/46 ,  H01J37/32

Abstract: According to one embodiment, a plasma processing apparatus includes: a processing chamber; a decompression section configured to decompress inside of the processing chamber; a member including a control section to be inserted into a depression provided on mounting side of a workpiece, the control section being configured to thereby control at least one of in-plane distribution of capacitance of a region including the workpiece and in-plane distribution of temperature of the workpiece; a mounting section provided inside the processing chamber; a plasma generating section configured to supply electromagnetic energy to a region for generating a plasma for performing plasma processing on the workpiece; and a gas supply section configured to supply a process gas to the region for generating a plasma. The control section performs control so that at least one of the in-plane distribution of capacitance and the in-plane distribution of temperature is made uniform.

公开(公告)号：US09507251B2

公开(公告)日：2016-11-29

申请号：US14197549

申请日：2014-03-05

Applicant: Shibaura Mechatronics Corporation ,  Kabushiki Kaisha Toshiba

Inventor： Tomoaki Yoshimori ,  Makoto Karyu ,  Takeharu Motokawa ,  Kosuke Takai ,  Yoshihisa Kase

IPC: G03F1/24 ,  G03B27/42 ,  G03F1/54 ,  G03F1/80

CPC classification number: G03F1/24 ,  G03B27/42 ,  G03F1/54 ,  G03F1/80

Abstract: According to one embodiment, a method is disclosed for manufacturing a reflective mask. The method can include forming a reflection layer on a major surface of a substrate. The method can include forming an absorption layer on the reflection layer. The method can include forming a pattern region in the absorption layer. In addition, the method can include forming a light blocking region surrounding the pattern region in the absorption layer and the reflection layer. The forming the light blocking region includes etching-processing the reflection layer using a gas containing chlorine and oxygen.

Abstract translation: 根据一个实施例，公开了一种用于制造反射掩模的方法。 该方法可以包括在基底的主表面上形成反射层。 该方法可以包括在反射层上形成吸收层。 该方法可以包括在吸收层中形成图案区域。 此外，该方法可以包括在吸收层和反射层中形成围绕图案区域的遮光区域。 形成遮光区域包括使用含有氯和氧的气体对反射层进行蚀刻处理。

公开(公告)号：US20140186754A1

公开(公告)日：2014-07-03

申请号：US14197549

申请日：2014-03-05

Applicant: Kabushiki Kaisha Toshiba ,  Shibaura Mechatronics Corporation

Inventor： Tomoaki Yoshimori ,  Makoto Karyu ,  Takeharu Motokawa ,  Kosuke Takai ,  Yoshihisa Kase

IPC: G03F1/24

CPC classification number: G03F1/24 ,  G03B27/42 ,  G03F1/54 ,  G03F1/80

Abstract: According to one embodiment, a method is disclosed for manufacturing a reflective mask. The method can include forming a reflection layer on a major surface of a substrate. The method can include forming an absorption layer on the reflection layer. The method can include forming a pattern region in the absorption layer. In addition, the method can include forming a light blocking region surrounding the pattern region in the absorption layer and the reflection layer. The forming the light blocking region includes etching-processing the reflection layer using a gas containing chlorine and oxygen.

Abstract translation: 根据一个实施例，公开了一种用于制造反射掩模的方法。 该方法可以包括在基底的主表面上形成反射层。 该方法可以包括在反射层上形成吸收层。 该方法可以包括在吸收层中形成图案区域。 此外，该方法可以包括在吸收层和反射层中形成围绕图案区域的遮光区域。 形成遮光区域包括使用含有氯和氧的气体对反射层进行蚀刻处理。