公开(公告)号：US11779877B2

公开(公告)日：2023-10-10

申请号：US17416807

申请日：2019-12-09

Applicant: SHOWA DENKO K.K.

Inventor： Atsushi Suzuki ,  Kazuma Matsui

IPC: B01D53/14 ,  B01D53/30 ,  B01D53/68 ,  B01D53/04

CPC classification number: B01D53/1456 ,  B01D53/1493 ,  B01D53/30 ,  B01D53/685 ,  B01D53/04 ,  B01D2251/108 ,  B01D2251/304 ,  B01D2251/306 ,  B01D2251/404 ,  B01D2251/408 ,  B01D2252/10 ,  B01D2257/2022 ,  B01D2257/2027 ,  B01D2257/2047

Abstract: A method for removing a halogen fluoride in a mixed gas by reacting the mixed gas containing a halogen fluoride including bromine or iodine with a removing agent, wherein the removing agent is a chloride, bromide or iodide of potassium, sodium, magnesium, calcium and barium. Also disclosed is a quantitative analysis method as well as a quantitative analyzer for a gas component contained in a hydrogen fluoride mixed gas, the method characterized by reacting a mixed gas containing a halogen fluoride and another gas component with a removing agent, thereby removing the halogen fluoride in the mixed gas, further removing produced by-products, and quantitatively analyzing a residual gas by a gas chromatograph.

公开(公告)号：US11972955B2

公开(公告)日：2024-04-30

申请号：US17612774

申请日：2021-04-30

Applicant: SHOWA DENKO K.K.

Inventor： Kazuma Matsui

IPC: H01L21/3213 ,  B08B9/08 ,  C09K13/00 ,  C23F1/10 ,  C23F1/12 ,  H01L21/302

CPC classification number: H01L21/32136 ,  B08B9/08 ,  C09K13/00 ,  C23F1/10 ,  C23F1/12 ,  H01L21/302 ,  H01L21/32135 ,  B08B2209/08

Abstract: A dry etching method which includes a dry etching step in which an etching gas containing a halogen fluoride being a compound of bromine or iodine and fluorine is brought into contact with a member to be etched (12) including an etching target being a target of etching with the etching gas to etch the etching target without using plasma. The etching target contains copper. Additionally, the dry etching step is performed under temperature conditions of from 140° C. to 300° C. Also disclosed is a method for manufacturing a semiconductor element and a cleaning method using the dry etching method.

公开(公告)号：US12119233B2

公开(公告)日：2024-10-15

申请号：US17595416

申请日：2021-01-12

Applicant: SHOWA DENKO K.K.

Inventor： Kazuma Matsui

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01L21/31122

Abstract: An etching method capable of selectively etching an oxide, which method includes an etching step in which an etching target (12) including an oxide is placed in a chamber (10), and the oxide included in the etching target (12) is etched in the chamber (10) using an etching gas containing a fluorine-containing compound including a functional group represented by the chemical formula below:




wherein a symbol * means a bonding point with another atom or atomic group. The oxide is at least one of a metal oxide or a semimetal oxide. Further, in the etching step, the etching is performed without generating a plasma of the etching gas in the chamber (10).

公开(公告)号：US12121847B2

公开(公告)日：2024-10-22

申请号：US17595409

申请日：2020-07-16

Applicant: SHOWA DENKO K.K.

Inventor： Kazuma Matsui

IPC: B01D53/04 ,  B01J20/18 ,  B01J20/20 ,  B01J20/28

CPC classification number: B01D53/0446 ,  B01D2253/102 ,  B01D2253/108 ,  B01D2253/308

Abstract: Provided are a gas treatment method and a gas treatment device capable of efficiently removing a bromofluoroethylene. A gas containing a bromofluoroethylene is brought into contact with an adsorbent (7) having pores with an average pore diameter of 0.4 nm or more and 4 nm or less in a temperature environment of not less than 0° C. and less than 120° C. to allow the adsorbent (7) to adsorb the bromofluoroethylene, and thus the bromofluoroethylene is separated from the gas.

公开(公告)号：US12014929B2

公开(公告)日：2024-06-18

申请号：US17595351

申请日：2020-10-12

Applicant: SHOWA DENKO K.K.

Inventor： Kazuma Matsui

IPC: H01L21/311 ,  H01L21/306

CPC classification number: H01L21/30604 ,  H01L21/31111

Abstract: There is provided an etching method for silicon nitride that enables selective etching of silicon nitride without using plasma. The etching method for silicon nitride includes placing etching object (12) containing silicon nitride in an etching gas containing halogen fluoride, which is a compound of bromine or iodine and fluorine, to etch the silicon nitride of the etching object (12) without using plasma under a pressure of 1 Pa to 80 kPa.