公开(公告)号：US20240038546A1

公开(公告)日：2024-02-01

申请号：US18012445

申请日：2021-06-24

Applicant: SHOWA DENKO K.K.

Inventor： Kazuma MATSUI ,  Yuki OKA

IPC: H01L21/3213 ,  H01J37/32 ,  G03F7/36 ,  C09K13/00

CPC classification number: H01L21/32136 ,  H01J37/32422 ,  G03F7/36 ,  C09K13/00 ,  H01J2237/3346

Abstract: There is provided a plasma etching method capable of selectively etching an etching object containing oxide of at least one of tin and indium compared to a non-etching object. The plasma etching method includes: an etching step of bringing an etching gas containing an unsaturated compound having a fluorine atom and a bromine atom in the molecule thereof into contact with a member to be etched including an etching object to be etched by the etching gas and a non-etching object not to be etched by the etching gas in the presence of plasma, performing etching while applying a bias power exceeding 0 W to a lower electrode supporting the member to be etched, and selectively etching the etching object compared to the non-etching object. The etching object contains oxide of at least one of tin and indium and the non-etching object contains at least one of a silicon-containing compound and a photoresist.

公开(公告)号：US20220254607A1

公开(公告)日：2022-08-11

申请号：US17611754

申请日：2020-05-22

Applicant: SHOWA DENKO K.K.

Inventor： Daisuke SATO ,  Kaoru KAIBUKI ,  Yuki OKA

IPC: H01J37/32

Abstract: There is provided a plasma etching method having a high etching rate of a silicon nitride film. A plasma etching method includes an etching step of etching a silicon nitride film formed on a substrate (20) using plasma obtained by converting an etching gas containing iodine heptafluoride into plasma.