公开(公告)号：US20240355590A1

公开(公告)日：2024-10-24

申请号：US18757613

申请日：2024-06-28

申请人： Tokyo Electron Limited

发明人： Takayuki KATSUNUMA ,  Masanobu HONDA

IPC分类号： H01J37/32

CPC分类号： H01J37/32449 ,  H01J2237/3321 ,  H01J2237/3346

摘要： A substrate processing method includes preparing a substrate. The substrate includes a first region and a second region providing an opening on the first region. The substrate processing method further includes forming a top deposit on a top of the second region by using a first plasma generated from a first gas. The substrate processing method further includes forming a first film on a surface of the top deposit and a sidewall surface defining the opening, the first film having a thickness decreasing along a depth direction of the opening.

公开(公告)号：US20240312789A1

公开(公告)日：2024-09-19

申请号：US18026095

申请日：2022-02-14

申请人： HITACHI HIGH-TECH CORPORATION

发明人： Takashi HATTORI ,  Masaki YAMADA ,  Keisuke AKINAGA

IPC分类号： H01L21/311 ,  H01J37/32 ,  H01L21/324

CPC分类号： H01L21/31116 ,  H01J37/32522 ,  H01J37/32816 ,  H01L21/324 ,  H01J2237/3344 ,  H01J2237/3346

摘要： A method for etching a silicon oxide film at a high selection ratio with respect to a silicon nitride film while a high etching rate of the silicon oxide film is balanced with a low etching rate of the silicon nitride film. The etching processing method is a dry etching processing method for etching a film without using plasma by supplying gas into a process chamber, the film having a side wall of a groove or a hole constituted by respective end parts of laminated film layers formed on a wafer, the laminated film layers including silicon oxide films each sandwiched between silicon nitride films, and in which the silicon oxide films are etched laterally from the end parts with the wafer being set to a low temperature equal to or less than (0.040x−42.0)° C. when a partial pressure of hydrogen fluoride gas is taken as x (Pa).

公开(公告)号：US20240162046A1

公开(公告)日：2024-05-16

申请号：US18449996

申请日：2023-08-15

申请人： WONIK IPS CO., LTD.

发明人： Min Su KIM

IPC分类号： H01L21/311 ,  H01J37/32

CPC分类号： H01L21/31116 ,  H01J37/3244 ,  H01J2237/3346

摘要： A substrate processing method using a substrate processing apparatus including a process chamber having a reaction space for processing a substrate including an underlayer and a multilayer pattern provided on the underlayer and formed by alternately stacking at least a plurality of first insulating layers and a plurality of second insulating layers on one another, a substrate supporter, a gas ejector, and a plasma reactor, includes a pretreatment step for forming a passivation layer by supplying, onto the substrate through the gas ejector, a pretreatment gas, and an etching step for selectively and at least partially etching the plurality of second insulating layers in a lateral direction relative to the plurality of first insulating layers by supplying, onto the substrate through the gas ejector, an etchant.

公开(公告)号：US20230223273A1

公开(公告)日：2023-07-13

申请号：US18109651

申请日：2023-02-14

申请人： National Technology & Engineering Solutions of Sandia, LLC

发明人： Randy J. Shul ,  Caitlin Rochford Friedman ,  Gregory Paul Salazar ,  Michael J. Rye ,  John Mudrick ,  Craig Y. Nakakura ,  Jeffry Joseph Sniegowski ,  Karl Douglas Greth

IPC分类号： H01J37/32 ,  H01L21/3213 ,  H01L21/311

CPC分类号： H01J37/321 ,  H01L21/31116 ,  H01L21/32136 ,  H01J2237/3341 ,  H01J2237/3346 ,  H01J2237/24585

摘要： The present invention relates to methods of delayering a semiconductor integrated circuit die or wafer. In at least one aspect, the method includes exposing a die or wafer to plasma of an etching gas and detecting exposure of one or more metal layers within the die. In one aspect of the invention, the plasma of the etching gas is non-selective and removes all materials in a layer at about the same rate. In another aspect of the invention, two different plasmas of corresponding etching gases are employed with each plasma of the etching gas being selective, thus necessitating the sequential use of both plasmas of corresponding etching gases to remove all materials in a layer.

公开(公告)号：US09552122B2

公开(公告)日：2017-01-24

申请号：US14793168

申请日：2015-07-07

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Bong-Sub Song ,  Soung-Chang Ku

IPC分类号： H01J37/32 ,  G06F3/044

CPC分类号： G06F3/044 ,  H01J37/32091 ,  H01J2237/3346

摘要： A dry etching apparatus for performing dry etching in manufacture of a set of touch screen panels on a mother substrate, including a chamber, an upper electrode in the chamber at an upper portion thereof, the upper electrode configured to apply a high-frequency power source (RF) to the interior of the chamber, a lower electrode in the chamber at a lower portion thereof, the lower electrode configured to apply the high-frequency power source to the interior of the chamber, a gas injection port configured to inject a compound mixture gas into the chamber, an exhaust port configured to exhaust a reactive gas produced in the interior of the chamber, and a shadow mask disposed above a location on the lower electrode for the mother substrate for the touch screen panels, the shadow mask having a plurality of exposure windows respectively corresponding to a plurality of exposure portions to be formed.

摘要翻译： 一种用于在母基板上制造一组触摸屏面板的干蚀刻装置，包括一个室，在其上部的该室中的上电极，该上电极被配置为施加一高频电源 （RF）到室的内部，下部电极在其下部的腔室中，下部电极构造成将高频电源施加到腔室的内部，气体注入口构造成将化合物 混合气体进入腔室，被配置为排出在室内产生的反应气体的排气口，以及设置在用于触摸屏面板的母基板的下电极上的位置上方的荫罩，荫罩具有 分别对应于要形成的多个曝光部分的多个曝光窗口。

公开(公告)号：US06818140B2

公开(公告)日：2004-11-16

申请号：US10002397

申请日：2001-10-31

申请人： Jian Ding

发明人： Jian Ding

IPC分类号： H01L2100

CPC分类号： H01J37/32871 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382 ,  H01L21/31116 ,  H01L21/6831

摘要： A high plasma density etch process for etching an oxygen-containing layer overlying a non-oxygen containing layer on a workpiece in a plasma reactor chamber, by providing a chamber ceiling overlying the workpiece and containing a semiconductor material, supplying into the chamber a process gas containing etchant precursor species, polymer precursor species and hydrogen, applying plasma source power into the chamber, and cooling the ceiling to a temperature range at or below about 150 degrees C. The etchant and polymer precursor species contain fluorine, and the chamber ceiling semiconductor material includes a fluorine scavenger precursor material. Preferably, the process gas includes at least one of CHF3 and CH2F2. Preferably, the process gas further includes a species including an inert gas, such as HeH2 or Ar. If the chamber is of the type including a heated fluorine scavenger precursor material, this material is heated to well above the polymer condensation temperature, while the ceiling is cooled. In some cases, the plasma source power applicator is an inductive antenna overlying the semiconductor ceiling, and the ceiling has a cooling/heating apparatus contacting the ceiling through semiconductor rings. The inductive antenna in this case constitutes inductive elements between adjacent ones of the semiconductor rings.

摘要翻译： 一种高等离子体密度蚀刻工艺，用于在等离子体反应器室中蚀刻覆盖工件上的非含氧层的含氧层，通过提供覆盖在工件上并容纳半导体材料的室顶部，向腔室供应工艺气体 包含蚀刻剂前体物质，聚合物前体物质和氢气，将等离子体源功率施加到室中，并将天花板冷却到约150℃或以下的温度范围。蚀刻剂和聚合物前体物质含有氟，并且室顶部半导体材料 包括氟清除剂前体材料。 优选地，工艺气体包括CHF 3和CH 2 F 2中的至少一种。 优选地，处理气体还包括包含惰性气体的物质，例如HeH 2或Ar。 如果室是包括加热的氟清除剂前体材料的类型，则将该材料加热到高于聚合物冷凝温度，同时天花板被冷却。 在一些情况下，等离子体源功率施加器是覆盖在半导体天花板上的感应天线，天花板具有通过半导体环接触天花板的冷却/加热设备。 在这种情况下，感应天线在相邻的半导体环之间构成感应元件。

公开(公告)号：US06365063B2

公开(公告)日：2002-04-02

申请号：US09350234

申请日：1999-07-09

申请人： Kenneth S Collins ,  Michael Rice ,  Farahmand E Askarinam ,  Douglas A Buchberger, Jr. ,  Craig A Roderick

发明人： Kenneth S Collins ,  Michael Rice ,  Farahmand E Askarinam ,  Douglas A Buchberger, Jr. ,  Craig A Roderick

IPC分类号： C23F100

CPC分类号： H01J37/32458 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

摘要： In a plasma reactor including a reactor chamber, a workpiece support for holding a workpiece inside the chamber during processing and an inductive antenna, a window electrode proximal a wall of the chamber, the antenna and wall being positioned adjacently, the window electrode being operable as (a) a capacitive electrode accepting RF power to capacitively coupled plasma source power into the chamber, and (b) a window electrode passing Rf power therethrough from said antenna into the chamber to inductively couple plasma source power into the chamber.

摘要翻译： 在包括反应器室的等离子体反应器中，用于在处理期间将工件保持在室内的工件支撑件和感应天线，靠近室壁的窗口电极，天线和壁相邻地定位，窗口电极可操作为 （a）容纳RF功率的电容电极，用于将等离子体源功率电容耦合到腔室中，以及（b）将来自所述天线的Rf功率从所述天线传递到腔室中以将等离子体源功率感应耦合到腔室中的窗口电极。

公开(公告)号：US20020020499A1

公开(公告)日：2002-02-21

申请号：US09970121

申请日：2001-10-02

申请人： Applied Materials, Inc.

发明人： Kenneth S. Collins ,  Michael Rice ,  John Trow ,  Douglas Buchberger ,  Craig A. Roderick

IPC分类号： C23F001/02

CPC分类号： H01J37/32458 ,  B01D53/22 ,  B01D53/226 ,  B01D53/268 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01L21/31116 ,  H01L21/6831

摘要： A plasma chamber enclosure structure for use in an RF plasma reactor. The plasma chamber enclosure structure being a single-wall dielectric enclosure structure of an inverted cup-shape configuration and having ceiling with an interior surface of substantially flat conical configuration extending to a centrally located gas inlet. The plasma chamber enclosure structure having a sidewall with a lower cylindrical portion generally transverse to a pedestal when positioned over a reactor base, and a transitional portion between the lower cylindrical portion and the ceiling. The transitional portion extends inwardly from the lower cylindrical portion and includes a radius of curvature. The structure being adapted to cover the base to comprise the RF plasma reactor and to define a plasma-processing volume over the pedestal. The structure being formed of a dielectric material of silicon, silicon carbide, quartz, and/or alumina being capable of transmitting inductive power therethrough from an adjacent antenna.

摘要翻译： 用于RF等离子体反应器的等离子体室外壳结构。 等离子体腔室结构是倒置杯形构造的单壁电介质外壳结构，并且具有延伸到中心位置的气体入口的具有基本平坦的圆锥形构造的内表面的天花板。 等离子体室外壳结构具有侧壁，当定位在反应器基座上时，具有大体横向于基座的下部圆柱形部分，以及在下部圆柱形部分和天花板之间的过渡部分。 过渡部分从下圆柱形部分向内延伸并且包括曲率半径。 所述结构适于覆盖所述基座以包括所述RF等离子体反应器并且限定所述基座上的等离子体处理体积。 该结构由硅，碳化硅，石英和/或氧化铝的电介质材料形成，其能够从相邻天线传输感应电力。

公开(公告)号：US20010054601A1

公开(公告)日：2001-12-27

申请号：US09008151

申请日：1998-01-16

发明人： JIAN DING

IPC分类号： B44C001/22

CPC分类号： H01J37/32871 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382 ,  H01L21/31116 ,  H01L21/6831

摘要： A high plasma density etch process for etching an oxygen-containing layer overlying a non-oxygen containing layer on a workpiece in a plasma reactor chamber, by providing a chamber ceiling overlying the workpiece and containing a semiconductor material, supplying into the chamber a process gas containing etchant precursor species, polymer precursor species and hydrogen, applying plasma source power into the chamber, and cooling the ceiling to a temperature range at or below about 150 degrees C. The etchant and polymer precursor species contain fluorine, and the chamber ceiling semiconductor material includes a fluorine scavenger precursor material. Preferably, the process gas includes at least one of CHF3 and CH2F2. Preferably, the process gas further includes a species including an inert gas, such as HeH2 or Ar. If the chamber is of the type including a heated fluorine scavenger precursor material, this material is heated to well above the polymer condensation temperature, while the ceiling is cooled. In some cases, the plasma source power applicator is an inductive antenna overlying the semiconductor ceiling, and the ceiling has a cooling/heating apparatus contacting the ceiling through semiconductor rings. The inductive antenna in this case constitutes inductive elements between adjacent ones of the semiconductor rings.

摘要翻译： 一种高等离子体密度蚀刻工艺，用于在等离子体反应器室中蚀刻覆盖工件上的非含氧层的含氧层，通过提供覆盖在工件上并容纳半导体材料的室顶部，向腔室供应工艺气体 包含蚀刻剂前体物质，聚合物前体物质和氢气，将等离子体源功率施加到室中，并将天花板冷却到约150℃或以下的温度范围。蚀刻剂和聚合物前体物质含有氟，并且室顶部半导体材料 包括氟清除剂前体材料。 优选地，工艺气体包括CHF 3和CH 2 F 2中的至少一种。 优选地，处理气体还包括包含惰性气体的物质，例如HeH 2或Ar。 如果室是包括加热的氟清除剂前体材料的类型，则将该材料加热到高于聚合物冷凝温度，同时天花板被冷却。 在一些情况下，等离子体源功率施加器是覆盖在半导体天花板上的感应天线，天花板具有通过半导体环接触天花板的冷却/加热设备。 在这种情况下，感应天线在相邻的半导体环之间构成感应元件。

公开(公告)号：US5904780A

公开(公告)日：1999-05-18

申请号：US847178

申请日：1997-05-01

申请人： Masayuki Tomoyasu

发明人： Masayuki Tomoyasu

IPC分类号： H01J37/32 ,  C23C16/00

CPC分类号： H01J37/321 ,  H01J37/32623 ,  H01J2237/3346

摘要： In a plasma etching apparatus, an inactive gas and a reactive gas are supplied from gas spouting holes into a process chamber, and are turned into plasma by means of RF discharge, so that a semiconductor wafer placed on a susceptor is etched by the plasma. An antenna formed of a solenoidal coil is arranged around the side wall of the process chamber, so as to generate an RF inductive electric field in the process chamber. A plurality of barriers are arranged to extend into the skin-depth region of the plasma from the side wall of the process chamber, so as to limit a mean free path of electrons in the skin-depth region. The barriers decrease density of low energy electrons in the skin depth region, so as to suppress progress of dissociation of the reactive gas, thereby obtaining a predetermined etching selectivity.

摘要翻译： 在等离子体蚀刻装置中，将惰性气体和反应性气体从气体喷出孔供给到处理室中，并通过RF放电而变成等离子体，从而通过等离子体蚀刻放置在基座上的半导体晶片。 由螺线管线圈形成的天线围绕处理室的侧壁设置，以便在处理室中产生RF感应电场。 多个屏障布置成从处理室的侧壁延伸到等离子体的表层深度区域中，以限制在深层区域中电子的平均自由程。 屏障降低了表层深度区域中低能电子的密度，从而抑制反应气体的解离进程，从而获得预定的蚀刻选择性。