公开(公告)号：US10094042B2

公开(公告)日：2018-10-09

申请号：US14813287

申请日：2015-07-30

申请人： SILTRONIC AG

发明人： Kurt Niederer ,  Helmut Teroerde ,  Josef Berger ,  Goetz Meisterernst ,  Frank Muemmler ,  Simon Zitzelsberger

IPC分类号： C30B13/00 ,  C30B13/28 ,  C30B29/06

摘要： A growing single crystal is supported in the region of a conical section of the single crystal via a supporting body during crystallization of the single crystal by the FZ method. The method comprises pressing the supporting body against the conical section of the growing single crystal at a temperature at which a first material of the supporting body becomes soft, and continuing pressing the supporting body against the conical section of the growing single crystal until the first material and a second material of the supporting body that remains hard at the cited temperature touch the conical section of the growing single crystal.

公开(公告)号：US11788201B2

公开(公告)日：2023-10-17

申请号：US17256138

申请日：2019-06-04

申请人： SILTRONIC AG

发明人： Ludwig Altmannshofer ,  Goetz Meisterernst ,  Gundars Ratnieks ,  Simon Zitzelsberger

IPC分类号： C30B13/20 ,  C30B13/12 ,  C30B29/06 ,  C30B30/04 ,  H01L21/02 ,  C30B13/26

CPC分类号： C30B13/20 ,  C30B13/12 ,  C30B13/26 ,  C30B29/06 ,  C30B30/04 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02625

摘要： Single crystals of semiconductor material are produced by an FZ method, wherein a molten zone is created between a feed rod and a growing single crystal; the method involving



melting feed rod material in a high frequency magnetic field of a first induction coil;
crystallizing material of the molten zone on top of the growing single crystal;
rotating the growing single crystal about an axis of rotation and changing the direction of rotation and the speed of rotation according to a predetermined pattern; and
imposing an alternating magnetic field of a second induction coil on the molten zone, wherein the alternating magnetic field is not axisymmetric with respect to the axis of rotation of the growing single crystal.

公开(公告)号：US20160060786A1

公开(公告)日：2016-03-03

申请号：US14813287

申请日：2015-07-30

申请人： SILTRONIC AG

发明人： Kurt Niederer ,  Helmut Teroerde ,  Josef Berger ,  Goetz Meisterernst ,  Frank Muemmler ,  Simon Zitzelsberger

IPC分类号： C30B13/00

CPC分类号： C30B13/00 ,  C30B13/285 ,  C30B29/06

摘要： A growing single crystal is supported in the region of a conical section of the single crystal via a supporting body during crystallization of the single crystal by the FZ method. The method comprises pressing the supporting body against the conical section of the growing single crystal at a temperature at which a first material of the supporting body becomes soft, and continuing pressing the supporting body against the conical section of the growing single crystal until the first material and a second material of the supporting body that remains hard at the cited temperature touch the conical section of the growing single crystal.

摘要翻译： 通过FZ方法在单晶结晶期间，通过支撑体在单晶的锥形区域的区域中支撑增长的单晶。 该方法包括在支撑体的第一材料变软的温度下将支撑体压靠在生长的单晶的锥形部分上，并且将支撑体继续压靠在生长的单晶的锥形部分上直到第一材料 并且在所述温度下保持硬度的支撑体的第二材料接触生长的单晶的锥形部分。