公开(公告)号：US11784045B2

公开(公告)日：2023-10-10

申请号：US17570116

申请日：2022-01-06

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Martin Christopher Holland

IPC分类号： H01L29/00 ,  H01L21/02 ,  H01L21/762 ,  C30B29/08 ,  H01L29/78 ,  C30B19/10 ,  C30B19/12 ,  C30B29/06 ,  H01L29/06 ,  H01L29/04

CPC分类号： H01L21/02653 ,  C30B19/106 ,  C30B19/12 ,  C30B29/06 ,  C30B29/08 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02625 ,  H01L21/02645 ,  H01L21/7624 ,  H01L29/04 ,  H01L29/0649 ,  H01L29/7838

摘要： A semiconductor device is provided. The semiconductor device includes a template layer disposed over a substrate and having a trench therein, a buffer structure disposed over a bottom surface of the trench and comprising a metal oxide, a single crystal semiconductor structure disposed within the trench and over the buffer structure and a gate structure disposed over a channel region of the single crystal semiconductor structure.

公开(公告)号：US11646395B2

公开(公告)日：2023-05-09

申请号：US16723966

申请日：2019-12-20

申请人： Trustees of Boston University

发明人： Yitao Liao ,  Theodore D. Moustakas

IPC分类号： H01L33/32 ,  H01L21/02 ,  H01L33/00 ,  H01L33/06 ,  H01L33/02

CPC分类号： H01L33/32 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0259 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/02573 ,  H01L21/02625 ,  H01L33/007 ,  H01L33/06 ,  H01L33/025

摘要： A method of growing an AlGaN semiconductor material utilizes an excess of Ga above the stoichiometric amount typically used. The excess Ga results in the formation of band structure potential fluctuations that improve the efficiency of radiative recombination and increase light generation of optoelectronic devices, in particular ultraviolet light emitting diodes, made using the method. Several improvements in UV LED design and performance are also provided for use together with the excess Ga growth method. Devices made with the method can be used for water purification, surface sterilization, communications, and data storage and retrieval.

公开(公告)号：US20180112323A1

公开(公告)日：2018-04-26

申请号：US15572321

申请日：2016-05-06

申请人： The Board of Regents of The University of Texas System

发明人： Allen J. Bard ,  Huayi Yin

IPC分类号： C25D9/04 ,  C25D21/12 ,  H01L31/18 ,  H01L21/66

CPC分类号： C25D9/04 ,  C25B1/006 ,  C25D9/08 ,  C25D21/12 ,  H01L21/02376 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02603 ,  H01L21/02625 ,  H01L21/02628 ,  H01L22/14 ,  H01L31/0445 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： Photoactive silicon films may be formed by electrodeposition from a molten salt electrolyte. In an embodiment, SiO2 is electrochemically reduced in a molten salt bath to deposit silicon on a carbonaceous substrate.

公开(公告)号：US20180066378A1

公开(公告)日：2018-03-08

申请号：US15696269

申请日：2017-09-06

申请人： TOYODA GOSEI CO., LTD.

发明人： Miki MORIYAMA ,  Shiro YAMAZAKI ,  Yasuhide YAKUSHI

IPC分类号： C30B19/02 ,  H01L21/02 ,  H01L21/78 ,  C30B29/40 ,  C30B19/12 ,  C23C16/34 ,  C23C16/56 ,  C23C16/455

CPC分类号： C30B19/02 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/56 ,  C30B19/12 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/7813

摘要： To reduce ungrown region or abnormal grain growth region in growing a Group III nitride semiconductor through a flux method. A seed substrate has a structure in which a Group III nitride semiconductor layer is formed on a ground substrate as a base, and a mask is formed on the Group III nitride semiconductor layer. The mask has a plurality of dotted windows in an equilateral triangular lattice pattern. A Group III nitride semiconductor is grown through flux method on the seed substrate. Carbon is placed on a lid of a crucible holing the seed substrate and a molten mixture so that carbon is not contact with the molten mixture at the start of crystal growth. Thereby, carbon is gradually added to the molten mixture as time passes. Thus, ungrown region or abnormal grain growth region is reduced in the Group III nitride semiconductor crystal grown on the seed substrate.

公开(公告)号：US20180044185A1

公开(公告)日：2018-02-15

申请号：US15444226

申请日：2017-02-27

申请人： Chien-Min Sung ,  Shao Chung Hu ,  I-Chiao Lin ,  Chien-Pei Yu

发明人： Chien-Min Sung ,  Shao Chung Hu ,  I-Chiao Lin ,  Chien-Pei Yu

IPC分类号： H01L21/02 ,  B82Y40/00 ,  C04B35/653 ,  C04B35/622 ,  C23C14/06 ,  B82Y30/00 ,  C04B35/583

CPC分类号： C01B32/184 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/20 ,  C04B35/583 ,  C04B35/62218 ,  C04B35/653 ,  C04B2235/3203 ,  C23C14/0605 ,  H01L21/0242 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02612 ,  H01L21/02625 ,  Y10S977/734 ,  Y10S977/842 ,  Y10S977/932 ,  Y10T428/24612 ,  Y10T428/31678

摘要： Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.

公开(公告)号：US09475695B2

公开(公告)日：2016-10-25

申请号：US14282216

申请日：2014-05-20

申请人： NanoGram Corporation

发明人： Weidong Li ,  Masaya Soeda ,  Gina Elizabeth Pengra-Leung ,  Shivkumar Chiruvolu

IPC分类号： H01B1/20 ,  B82Y30/00 ,  H01B1/24 ,  H01L21/02 ,  H01L29/06 ,  H01L21/22 ,  H01L21/228 ,  H01L31/068 ,  H01L31/18 ,  C09D11/037 ,  C09D11/52 ,  H01L21/268

CPC分类号： B82Y30/00 ,  C09D11/037 ,  C09D11/52 ,  H01B1/20 ,  H01B1/24 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02625 ,  H01L21/2225 ,  H01L21/228 ,  H01L21/268 ,  H01L29/0665 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Silicon based nanoparticle inks are formulated with viscous polycyclic alcohols to control the rheology of the inks. The inks can be formulated into pastes with non-Newtonian rheology and good screen printing properties. The inks can have low metal contamination such that they are suitable for forming semiconductor structures. The silicon based nanoparticles can be elemental silicon particles with or without dopant.

摘要翻译： 用粘性多环醇配制硅基纳米颗粒油墨以控制油墨的流变性。 油墨可以配制成具有非牛顿流变性和良好丝网印刷性能的浆料。 油墨可以具有低的金属污染，使得它们适合于形成半导体结构。 硅基纳米颗粒可以是具有或不具有掺杂剂的元素硅颗粒。

公开(公告)号：US09041004B2

公开(公告)日：2015-05-26

申请号：US14167667

申请日：2014-01-29

申请人： NGK Insulators, Ltd.

发明人： Makoto Iwai ,  Takayuki Hirao ,  Takashi Yoshino

IPC分类号： H01L29/15 ,  H01L33/32 ,  C30B19/02 ,  H01L21/02 ,  C30B29/40 ,  C30B29/38 ,  H01L33/00

CPC分类号： H01L33/32 ,  C30B19/02 ,  C30B29/38 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02625 ,  H01L33/007

摘要： A film 3 of a nitride of a group 13 element is grown on a seed crystal substrate 11 by flux process from a melt containing a flux and a group 13 element under nitrogen containing atmosphere. The film 3 of a nitride of a group 13 element includes an inclusion distributed layer 3a in a region distant from an interface of the film of a nitride of group 13 element on the side of the seed crystal substrate 11 and containing inclusions derived from components of the melt, and an inclusion depleted layer 3b, with the inclusion depleted. provided on the layer 3a.

摘要翻译： 13族元素的氮化物的膜3通过在含氮气氛下含有助熔剂和13族元素的熔体的助熔剂在种子晶体基板11上生长。 13族元素的氮化物的膜3在与晶种基板11一侧的第13族元素的氮化物的界面相隔的区域中包含夹杂物分布层3a， 熔体和包含物耗尽层3b，其中包含物耗尽。 设置在层3a上。

公开(公告)号：US20140360427A1

公开(公告)日：2014-12-11

申请号：US14465875

申请日：2014-08-22

申请人： Societe Francaise de Detecteurs Infrarouges- Sofradir

发明人： Sylvain Paltrier

IPC分类号： C30B11/00 ,  H01L21/02 ,  C30B11/14

CPC分类号： C30B11/003 ,  C30B11/00 ,  C30B11/002 ,  C30B11/14 ,  C30B15/22 ,  C30B29/10 ,  C30B29/48 ,  H01L21/02376 ,  H01L21/02428 ,  H01L21/02562 ,  H01L21/02625 ,  H01L21/02645 ,  Y10S117/911 ,  Y10T117/1024

摘要： A method for producing the growth of a semiconductor material, in particular of type II-VI, uses a melt of the semiconductor placed in a sealed bulb under vacuum or under controlled atmosphere, the bulb being subjected to a sufficient temperature gradient for first maintaining the melt in the liquid state, then causing its progressive crystallization from the surface towards the bottom. The method further comprises an element capable of floating on the surface of the melt, and equipped with a substantially central bore, intended for receiving a seed crystal for permitting the nucleation leading to the preparation of a seed crystal, and also supporting the seed crystal above the melt while maintaining it in contact with the melt in order to permit the continued crystallization from the seed crystal by lowering the temperature gradient.

摘要翻译： 用于生产半导体材料，特别是II-VI型的生长的方法使用在真空或受控气氛下放置在密封灯泡中的半导体熔体，灯泡经受足够的温度梯度，以首先保持 在液态下熔化，然后使其从表面向底部逐渐结晶。 该方法还包括能够漂浮在熔体表面上并具有基本上中心孔的元件，其用于接收晶种以允许成核导致晶种的制备，并且还支撑上述晶种 熔体，同时保持其与熔体接触，以允许通过降低温度梯度从晶种继续结晶。

公开(公告)号：US20140261156A1

公开(公告)日：2014-09-18

申请号：US14349987

申请日：2012-10-02

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Virginie Brize ,  Jean-Paul Garandet ,  Stephen Giraud ,  Etienne Pihan

IPC分类号： C30B19/02 ,  C30B19/06

CPC分类号： C30B19/02 ,  C30B19/062 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02625 ,  H01L21/02628

摘要： The present invention concerns a method of forming, by liquid phase epitaxial growth, on the surface of a plurality of substrates, a layer of crystallised silicon having a grain size greater than or equal to 200 μm, comprising at least the steps consisting of: (i) arranging a liquid bath formed from a liquid metal solvent phase in which liquid silicon is homogeneously dispersed; (ii) immersing, in the bath of step (i), said substrates (1), in such a way that each of the surfaces of the substrates (1) that need to be coated is in contact with the liquid bath, said surfaces being arranged parallel to one another, and perpendicularly to the interface (3) of the liquid bath (2) and the gas atmosphere (4) contiguous to said liquid bath or according to an inclination angle of at least 45° in relation to said interface (3); (iii) imposing, on the whole of step (ii), conditions conducive to the vaporisation of said liquid solvent phase and to the establishing of a natural convection movement of the liquid bath in the vicinity of the surfaces to be coated of the substrates, which are held in fixed position; and (iv) recovering the substrates coated with the crystallised silicon layer formed at the end of step (iii).

摘要翻译： 本发明涉及通过液相外延生长在多个基板的表面上形成具有大于或等于200μm的晶粒尺寸的结晶硅层的方法，至少包括以下步骤：（ i）布置由液态硅均匀分散的液态金属溶剂相形成的液浴; （ii）将所述基板（1）浸入步骤（i）的槽中，使得需要涂布的基板（1）的每个表面与液槽接触，所述表面 彼此平行并且垂直于液槽（2）的界面（3）和与所述液槽相邻的气体气氛（4），或者相对于所述界面的至少45°的倾斜角度 （3）; （iii）在整个步骤（ii）中施加有助于所述液体溶剂相的蒸发的条件以及在待涂布的表面附近建立液槽的自然对流运动， 固定位置; 和（iv）回收涂有步骤（iii）末端形成的结晶硅层的基材。

公开(公告)号：US08735905B2

公开(公告)日：2014-05-27

申请号：US13809261

申请日：2011-07-14

申请人： Hiroyuki Fukuyama ,  Masayoshi Adachi ,  Akikazu Tanaka ,  Kazuo Maeda

发明人： Hiroyuki Fukuyama ,  Masayoshi Adachi ,  Akikazu Tanaka ,  Kazuo Maeda

IPC分类号： H01L29/15 ,  H01L31/0256

CPC分类号： C30B19/12 ,  C30B9/06 ,  C30B9/10 ,  C30B19/04 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625 ,  H01L33/007 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a method for producing inexpensive and high-quality aluminum nitride crystals. Gas containing N atoms is introduced into a melt of a Ga—Al alloy, whereby aluminum nitride crystals are made to epitaxially grow on a seed crystal substrate in the melt of the Ga—Al alloy. A growth temperature of aluminum nitride crystals is set at not less than 1000 degrees C. and not more than 1500 degrees C., thereby allowing GaN to be decomposed into Ga metal and nitrogen gas.

摘要翻译： 提供了一种制造廉价且高品质的氮化铝晶体的方法。 含有N原子的气体被引入Ga-Al合金的熔体中，由此使氮化铝晶体在Ga-Al合金的熔体中的晶种基板上外延生长。 氮化铝晶体的生长温度设定为1000℃以上且1500℃以下，从而使GaN分解为Ga金属和氮气。