公开(公告)号：US20230152341A1

公开(公告)日：2023-05-18

申请号：US18054278

申请日：2022-11-10

Applicant: SK hynix Inc.

Inventor： Chan Hyuk RHEE ,  Jong Hee YOO ,  Kee Jeung LEE

IPC: G01N35/04 ,  G01N1/04 ,  G01N35/00

CPC classification number: G01N35/04 ,  G01N1/04 ,  G01N35/00732

Abstract: A system for automating the processing of a sample for analysis includes a sample processing unit configured to manufacture a plurality of unit wafers by cutting an analysis target wafer and to manufacture a sample for analysis by applying at least one process to one of the plurality of unit wafers, a sample storage unit including a loading area having a plurality of reception holders, on which a unit wafer and the sample for analysis have been loaded, that are carried in and out, and a sample conveying unit configured to convey the analysis target wafer, the unit wafer, and the sample for analysis respectively between the sample processing unit and the sample storage unit.

公开(公告)号：US20140097397A1

公开(公告)日：2014-04-10

申请号：US13842919

申请日：2013-03-15

Applicant: SK HYNIX INC.

Inventor： Woo Young PARK ,  Kee Jeung LEE ,  Beom Yong KIM

IPC: H01L45/00

CPC classification number: H01L45/145 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616

Abstract: A resistive memory device includes a first electrode layer, a second electrode layer, and a first variable resistive layer and a second variable resistive layer stacked at least once between the first electrode layer and the second electrode layer. The first variable resistive material layer may include a metal nitride layer having a resistivity higher than that of the first electrode layer or the second electrode layer and less than or equal to that of an insulating material.

Abstract translation: 电阻式存储器件包括在第一电极层和第二电极层之间至少堆叠一次的第一电极层，第二电极层以及第一可变电阻层和第二可变电阻层。 第一可变电阻材料层可以包括具有比第一电极层或第二电极层的电阻率高的电阻率的金属氮化物层，并且小于或等于绝缘材料的电阻率。