公开(公告)号：US12081251B2

公开(公告)日：2024-09-03

申请号：US18057054

申请日：2022-11-18

Applicant: Socionext Inc.

Inventor： Kenta Aruga ,  Takashi Miyazaki ,  Daisuke Kimura ,  Yasuhiro Majima ,  Shunichiro Masaki ,  Shunsuke Hirano

IPC: H04B1/10 ,  H04L27/00

CPC classification number: H04B1/10 ,  H04L27/0008

Abstract: A processing circuit includes: a clock generating circuit configured to generate, based on a reference clock signal and a frequency division ratio, a first clock signal; a frequency dividing and delay circuit configured to generate a second clock signal to have a first phase difference with the reference clock signal by dividing the frequency of the first clock signal and delaying the first clock signal based on a phase shift set signal and the frequency division ratio; an analog-to-digital converter circuit configured to convert an analog signal into a digital signal based on the first clock signal and a conversion trigger signal indicating a sampling period and a conversion period; and a control circuit configured to generate the conversion trigger signal to have the same cycle as the second clock signal based on the frequency division ratio and the first clock signal.

公开(公告)号：US11268865B2

公开(公告)日：2022-03-08

申请号：US16674928

申请日：2019-11-05

Applicant: Socionext Inc.

Inventor： Hiroyuki Hamano ,  Takashi Miyazaki

IPC: G01K7/01 ,  G01K3/00

Abstract: A temperature measuring device includes first and second semiconductor elements each of which has a p-n junction, a transistor group including a plurality of transistors of which respective sources are connected to a power source and of which respective gates are connected to each other, the plurality of transistors constituting a current source, the transistor group being configured to output a first current and a second current having a different magnitude from the first current to the first and second semiconductor elements, respectively, and a selector configured to select at least one first transistor and a plurality of second transistors different from the first transistor, from among the plurality of transistors.

公开(公告)号：US09897490B2

公开(公告)日：2018-02-20

申请号：US14618911

申请日：2015-02-10

Applicant: SOCIONEXT INC.

Inventor： Takashi Miyazaki ,  Hiroyuki Hamano

IPC: G01K7/01 ,  H03M1/36 ,  G01K1/16 ,  G01K7/16

CPC classification number: G01K7/01 ,  G01K7/16 ,  H03M1/36

Abstract: In a first sensing state in which a first current flows in a forward direction with respect to a pn junction of a first semiconductor element and a second current of a different magnitude from the first current flows in a forward direction with respect to a pn junction of a second semiconductor element, a difference between a forward direction voltage of the pn junction of the first semiconductor element and a forward direction voltage of the pn junction of the second semiconductor element is converted into a digital value by a computer and acquired as a first digital value. In a second sensing state in which the second current flows in the forward direction in the pn junction of the first semiconductor element and the first current flows in the forward direction in the pn junction of the second semiconductor element, a difference between the forward direction voltage of the pn junction of the first semiconductor element and the forward direction voltage of the pn junction of the second semiconductor element is converted into a digital value by the computer and acquired as a second digital value. A temperature measurement value is computed based on an average value of the first digital value and the second digital value by the computer.