公开(公告)号：US10088375B2

公开(公告)日：2018-10-02

申请号：US15104095

申请日：2015-05-05

Applicant: Southeast University

Inventor： Weihua Li ,  Lei Wang ,  Lu Zhang ,  Zaifa Zhou

IPC: G01L1/00 ,  G01L1/08 ,  G01L5/00 ,  H01L21/66

Abstract: A thin film material residual testing structure comprises two groups of structures. The first group of structures comprises an electrostatic driven polysilicon cantilever beam, an asymmetrical cross beam made of thin film material to be tested and having an alignment structure, and a double-end fixed support beam made of the thin film material to be tested. The second group of structures is similar to the structure of the first group with the fixed support beam removed. A residual stress testing method includes separating the loading drive part of force from a residual stress testing structure made of the thin film material to be tested, designing the bending deflection of a control testing structure according to geometrical parameters, extracting the force applied on the residual stress testing structure and utilizing force and deflection to calculate the residual stress of the thin film material to be tested.

公开(公告)号：US20180164164A1

公开(公告)日：2018-06-14

申请号：US15104095

申请日：2015-05-05

Applicant: SOUTHEAST UNIVERSITY

Inventor： Weihua Li ,  Lei Wang ,  Lu Zhang ,  Zaifa Zhou

IPC: G01L1/08 ,  H01L21/66 ,  G01L5/00

CPC classification number: G01L1/086 ,  G01L1/00 ,  G01L5/0047 ,  H01L22/34

Abstract: A thin film material residual testing structure comprises two groups of structures. The first group of structures comprises an electrostatic driven polysilicon cantilever beam, an asymmetrical cross beam made of thin film material to be tested and having an alignment structure, and a double-end fixed support beam made of the thin film material to be tested. The second group of structures is similar to the structure of the first group with the fixed support beam removed. A residual stress testing method includes separating the loading drive part of force from a residual stress testing structure made of the thin film material to be tested, designing the bending deflection of a control testing structure according to geometrical parameters, extracting the force applied on the residual stress testing structure and utilizing force and deflection to calculate the residual stress of the thin film material to be tested.

公开(公告)号：US11002710B2

公开(公告)日：2021-05-11

申请号：US16329244

申请日：2018-02-11

Applicant: SOUTHEAST UNIVERSITY

Inventor： Zaifa Zhou ,  Chao Sun ,  Xinge Guo ,  Qingan Huang

IPC: G01N29/12 ,  G01N3/02 ,  G01N29/24 ,  G01N3/00

Abstract: A method for measuring mechanical parameters of a multilayer composite thin film structure and belongs to the technical field of online tests of micro-electro-mechanical system (MEMS for short) material parameters. Equivalent Young modulus and equivalent residual stress of each layer of the multilayer composite thin film structure can be obtained in one step by means of solving an equation set on the basis of a relationship between first-order resonance frequency of multilayer composite fixed-fixed beams and multilayer composite cantilever beams and parameters such as material characteristics and structure size, the online test of multilayer thin film materials can be realized, the test structure and calculating method are simple, and the accuracy is higher. The present invention further discloses a device for measuring mechanical parameters of the multilayer composite thin film structure.

公开(公告)号：US20150324499A1

公开(公告)日：2015-11-12

申请号：US14649661

申请日：2013-10-16

Applicant: SOUTHEAST UNIVERSITY

Inventor： Zaifa Zhou ,  Lili Shi

IPC: G06F17/50 ,  G06F17/10 ,  G03F7/20

CPC classification number: G06F17/5009 ,  G03F7/20 ,  G06F17/10

Abstract: Disclosed is a hash fast marching method for simulation of surface evolution in a photoresist etching process, including: dividing a substrate into grids and determining an etching speed matrix, initializing a grid point time value, building a hash table and a minimum heap, marching forward and performing an update, and repeating the foregoing steps until a time value of a minimum root node is not smaller than a preset photoresist etching (photoresist development) time. In the invention method, calculation is performed only for grid points in a narrow band (NarrowBand) around the established surface, and this narrow band only has a width of one grid point, so that higher iteration efficiency is achieved.

Abstract translation: 公开了一种用于模拟光致抗蚀剂蚀刻工艺中的表面演化的散列快速行进方法，包括：将基板划分成网格并确定蚀刻速度矩阵，初始化网格点时间值，构建散列表和最小堆，前进 并执行更新，并且重复前述步骤，直到最小根节点的时间值不小于预设的光致抗蚀剂蚀刻（光致抗蚀剂显影）时间。 在本发明的方法中，仅对所建立的表面周围的窄带（NarrowBand）中的网格点进行计算，该窄带仅具有一个网格点的宽度，从而实现更高的迭代效率。