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    HIGH ASPECT RATIO CAPACITIVELY COUPLED MEMS DEVICES
    1.
    发明申请
    HIGH ASPECT RATIO CAPACITIVELY COUPLED MEMS DEVICES 有权
    高比例电容耦合MEMS器件

    公开(公告)号：US20130228881A1

    公开(公告)日：2013-09-05

    申请号：US13862208

    申请日：2013-04-12

    Applicant: STMICROELECTRONICS, INC.

    Inventor： Venkatesh Mohanakrishnaswamy ,  Loi N. Nguyen

    IPC: B81B3/00

    CPC classification number: B81B3/0021 ,  B81C1/00166 ,  B81C1/00626

    Abstract: A method that includes forming an opening between at least one first electrode and a second electrode by forming a recess in a first electrode layer, the recess having sidewalls that correspond to a surface of the at least one first electrode, forming a first sacrificial layer on the sidewalls of the recess, the first sacrificial layer having a first width that corresponds to a second width of the opening, forming a second electrode layer in the recess that corresponds to the second electrode, and removing the first sacrificial layer to form the opening between the second electrode and the at least one first electrode.

    Abstract translation: 一种方法，其包括通过在第一电极层中形成凹槽而在至少一个第一电极和第二电极之间形成开口，所述凹部具有对应于所述至少一个第一电极的表面的侧壁，形成第一牺牲层 所述凹槽的侧壁，所述第一牺牲层具有对应于所述开口的第二宽度的第一宽度，在所述凹部中形成对应于所述第二电极的第二电极层，以及移除所述第一牺牲层以形成 所述第二电极和所述至少一个第一电极。

    High aspect ratio capacitively coupled MEMS devices
    2.
    发明授权
    High aspect ratio capacitively coupled MEMS devices 有权
    高纵横比电容耦合MEMS器件

    公开(公告)号：US08680631B2

    公开(公告)日：2014-03-25

    申请号：US13862208

    申请日：2013-04-12

    Applicant: STMicroelectronics, Inc.

    Inventor： Venkatesh Mohanakrishnaswamy ,  Loi N. Nguyen

    IPC: H01L29/84

    CPC classification number: B81B3/0021 ,  B81C1/00166 ,  B81C1/00626

    Abstract: A method that includes forming an opening between at least one first electrode and a second electrode by forming a recess in a first electrode layer, the recess having sidewalls that correspond to a surface of the at least one first electrode, forming a first sacrificial layer on the sidewalls of the recess, the first sacrificial layer having a first width that corresponds to a second width of the opening, forming a second electrode layer in the recess that corresponds to the second electrode, and removing the first sacrificial layer to form the opening between the second electrode and the at least one first electrode.

    Abstract translation: 一种方法，其包括通过在第一电极层中形成凹槽而在至少一个第一电极和第二电极之间形成开口，所述凹部具有对应于所述至少一个第一电极的表面的侧壁，形成第一牺牲层 所述凹槽的侧壁，所述第一牺牲层具有对应于所述开口的第二宽度的第一宽度，在所述凹部中形成对应于所述第二电极的第二电极层，以及移除所述第一牺牲层以形成 所述第二电极和所述至少一个第一电极。

    Embedded microelectromechanical systems (MEMS) semiconductor substrate and related method of forming
    4.
    再颁专利
    Embedded microelectromechanical systems (MEMS) semiconductor substrate and related method of forming 有权
    嵌入式微机电系统（MEMS）半导体衬底及相关成型方法

    公开(公告)号：USRE45286E1

    公开(公告)日：2014-12-09

    申请号：US13890668

    申请日：2013-05-09

    Applicant: STMicroelectronics, Inc.

    Inventor： Olivier Le Neel ,  Peyman Sana ,  Loi Nguyen ,  Venkatesh Mohanakrishnaswamy

    IPC: H01L21/00

    CPC classification number: B81C1/00246 ,  B81B2201/0271 ,  H01L27/0617

    Abstract: An embedded MEMS semiconductor substrate is set forth and can be a starting material for subsequent semiconductor device processing. A MEMS device is formed in a semiconductor substrate, including at least one MEMS electrode and a buried silicon dioxide sacrificial layer has been applied for releasing the MEMS. A planarizing layer is applied over the substrate, MEMS device and MEMS electrode. A polysilicon protection layer is applied over the planarizing layer. A silicon nitride capping layer is applied over the polysilicon protection layer. A polsilicon seed layer is applied over the polysilicon nitride capping layer. The MEMS device is released by removing at least a portion of the buried silicon dioxide sacrificial layer and an epitaxial layer is grown over the polysilicon seed layer to be used for subsequent semiconductor wafer processing.

    Abstract translation: 介绍了一种嵌入式MEMS半导体衬底，可以作为后续半导体器件处理的起始材料。 在包括至少一个MEMS电极的半导体衬底中形成MEMS器件，并且已经应用​​了掩埋的二氧化硅牺牲层来释放MEMS。 在衬底，MEMS器件和MEMS电极上施加平坦化层。 在平坦化层上施加多晶硅保护层。 在多晶硅保护层上施加氮化硅覆盖层。 将多晶硅种子层施加在多晶硅氮化物覆盖层上。 通过去除掩埋的二氧化硅牺牲层的至少一部分来释放MEMS器件，并且在多晶硅种子层上生长外延层以用于随后的半导体晶片处理。

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