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公开(公告)号：US11851319B2
公开(公告)日：2023-12-26
申请号：US16560518
申请日：2019-09-04
Applicant: STMicroelectronics S.r.l.
Inventor： Anna Angela Pomarico , Giuditta Roselli , Daniele Caltabiano , Roberto Brioschi , Mohammad Abbasi Gavarti
CPC classification number: B81B3/0072 , B60T1/065 , B60T8/17 , B60T8/171 , G01L1/18 , G01L3/00 , G01L9/06 , B81B2201/0264 , B81B2201/0292 , B81B2203/0127 , B81B2203/0315
Abstract: A device includes: a micromechanical sensing structure configured to provide an electrical detection quantity as a function of a load; and a package enclosing the micromechanical sensing structure and providing a mechanical and electrical interface with respect to an external environment. The package includes a housing structure defining a cavity housing the micromechanical sensing structure; and a package coating that coats, at least in part, the housing structure, the package coating including a mechanical interface configured to transfer, in a uniform manner, the load on the housing structure and on the micromechanical sensing structure, wherein the housing structure includes a deformable layer interposed and in contact between the micromechanical sensing structure and the package coating, and wherein the deformable layer defines a mechanical-coupling interface.
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公开(公告)号：US11009412B2
公开(公告)日：2021-05-18
申请号：US16904123
申请日：2020-06-17
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Mohammad Abbasi Gavarti , Daniele Caltabiano , Andrea Picco , Anna Angela Pomarico , Giuditta Roselli , Francesco Braghin
Abstract: A microelectromechanical force/pressure sensor has: a sensor die, of semiconductor material, having a front surface and a bottom surface, extending in a horizontal plane, and made of a compact bulk region having a thickness along a vertical direction, transverse to the horizontal plane; piezoresistive elements, integrated in the bulk region of the sensor die, at the front surface thereof; and a cap die, coupled above the sensor die, covering the piezoresistive elements, having a respective front surface and bottom surface, opposite to each other along the vertical direction, the bottom surface facing the front surface of the sensor die. A conversion layer is arranged between the front surface of the sensor die and the bottom surface of the cap die, patterned to define a groove traversing its entire thickness along the vertical direction; the piezoresistive elements are arranged vertically in correspondence to the groove and the conversion layer is designed to convert a load applied to the front surface of the cap die and/or bottom surface of the sensor die along the vertical direction into a planar stress distribution at the groove, acting in the horizontal plane.
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公开(公告)号：US20200095114A1
公开(公告)日：2020-03-26
申请号：US16560518
申请日：2019-09-04
Applicant: STMicroelectronics S.r.l.
Inventor： Anna Angela Pomarico , Giuditta Roselli , Daniele Caltabiano , Roberto Brioschi , Mohammad Abbasi Gavarti
Abstract: A device includes: a micromechanical sensing structure configured to provide an electrical detection quantity as a function of a load; and a package enclosing the micromechanical sensing structure and providing a mechanical and electrical interface with respect to an external environment. The package includes a housing structure defining a cavity housing the micromechanical sensing structure; and a package coating that coats, at least in part, the housing structure, the package coating including a mechanical interface configured to transfer, in a uniform manner, the load on the housing structure and on the micromechanical sensing structure, wherein the housing structure includes a deformable layer interposed and in contact between the micromechanical sensing structure and the package coating, and wherein the deformable layer defines a mechanical-coupling interface.
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公开(公告)号：US10724909B2
公开(公告)日：2020-07-28
申请号：US15894770
申请日：2018-02-12
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Mohammad Abbasi Gavarti , Daniele Caltabiano , Andrea Picco , Anna Angela Pomarico , Giuditta Roselli , Francesco Braghin
Abstract: A microelectromechanical force/pressure sensor has: a sensor die, of semiconductor material, having a front surface and a bottom surface, extending in a horizontal plane, and made of a compact bulk region having a thickness along a vertical direction, transverse to the horizontal plane; piezoresistive elements, integrated in the bulk region of the sensor die, at the front surface thereof; and a cap die, coupled above the sensor die, covering the piezoresistive elements, having a respective front surface and bottom surface, opposite to each other along the vertical direction, the bottom surface facing the front surface of the sensor die. A conversion layer is arranged between the front surface of the sensor die and the bottom surface of the cap die, patterned to define a groove traversing its entire thickness along the vertical direction; the piezoresistive elements are arranged vertically in correspondence to the groove and the conversion layer is designed to convert a load applied to the front surface of the cap die and/or bottom surface of the sensor die along the vertical direction into a planar stress distribution at the groove, acting in the horizontal plane.
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