公开(公告)号：US11482615B2

公开(公告)日：2022-10-25

申请号：US16869026

申请日：2020-05-07

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Giuseppe Cina′ ,  Antonio Giuseppe Grimaldi ,  Luigi Arcuri

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

Abstract: A vertical-conduction MOSFET device, includes: a semiconductor body, having a front side and a back side and having a first conductivity; a trench-gate region; a body region, having the first conductivity; a source region, having a second conductivity; and a drain region, having the second conductivity. The source region, body region, and drain region are aligned with one another along a first direction and define a channel area, which, in a conduction state of the MOSFET device, hosts a conductive channel. The drain region borders on a portion of the semiconductor body having the first conductivity, thus forming a junction diode, which, in an inhibition state of the MOSFET device, is adapted to cause a leakage current to flow outside the channel area.

公开(公告)号：US09305907B2

公开(公告)日：2016-04-05

申请号：US14206328

申请日：2014-03-12

Applicant: STMicroelectronics S.r.l.

Inventor： Luigi Arcuri ,  MariaEloisa Castagna

IPC: H01L25/16 ,  H01L27/06 ,  H01L27/07 ,  H01L27/146 ,  H03K17/785 ,  H01L27/144 ,  H01L29/78

CPC classification number: H01L25/167 ,  H01L27/0617 ,  H01L27/0629 ,  H01L27/0635 ,  H01L27/0716 ,  H01L27/1443 ,  H01L27/14623 ,  H01L27/14681 ,  H01L29/7803 ,  H01L29/7808 ,  H01L2924/0002 ,  H03K17/785 ,  H03K2217/0036 ,  H01L2924/00

Abstract: An optoelectronic integrated device includes a body made of semiconductor material, which is delimited by a front surface and includes a substrate having a first type of conductivity, an epitaxial region, which has the first type of conductivity and forms the front surface, and a ring region having a second type of conductivity, which extends into the epitaxial region from the front surface, and delimiting an internal region. The optoelectronic integrated device moreover includes a MOSFET including at least one body region having the second type of conductivity, which contacts the ring region and extends at least in part into the internal region from the front surface. A photodetector includes a photodetector region having the second type of conductivity, and extends into the semiconductor body starting from the front surface, contacting the ring region.

Abstract translation: 一种光电集成器件包括由半导体材料制成的主体，其由前表面限定，并且包括具有第一导电类型的衬底，具有第一导电类型并形成前表面的外延区域，以及环 具有第二类型的导电性的区域，其从前表面延伸到外延区域中，并限定内部区域。 光电集成器件还包括一个MOSFET，它包括至少一个具有第二导电类型的体区，它与环区接触并至少部分地从前表面延伸到内部区。 光电检测器包括具有第二类导电性的光电检测器区域，并从前表面开始延伸到半导体本体中，与环形区域接触。