Abstract:
A semiconductor device comprises one or more registers having digital signals stored therein. The semiconductor device is configured for communication with one or more external devices and such communication may involve requests for access to portions of these register or registers. Register shield circuitry is provided comprising access detection circuitry configured to detect requests for access to these register portions in communication with the external device or devices. The register shield circuitry is configured to be selectively activated in a register shield mode to shield these register portions from undesired requests for access. When activated in the register shield mode, the register shield circuitry prevents access to these register portions in response to requests for access detected by the access detection circuitry.
Abstract:
A bi-synchronous electronic device may include a FIFO memory circuit, and a first digital circuit coupled to the FIFO memory circuit and configured to operate based upon a first clock signal, and write to the FIFO memory circuit based upon a write pointer. The bi-synchronous electronic device may include second digital circuit coupled to the FIFO memory circuit and configured to operate based upon a second clock signal different from the first clock signal, and read from the FIFO memory circuit based upon a read pointer. The FIFO memory circuit may be configured to detect a jump in the write pointer to a new position, determine jump candidates for the read pointer from a current position, select a jump candidate, and synchronize the read pointer based upon the selected jump candidate.
Abstract:
A circuit includes combinational circuit and sequential circuit elements coupled thereto. The circuit includes a multiplexor coupled to the combinational and sequential circuit elements, and a system register is coupled to the multiplexor. At least one portion of the combinational and sequential circuit elements is configured to selectively switch to operate as a random access memory.
Abstract:
A bi-synchronous electronic device may include a FIFO memory circuit configured to store data, and a first digital circuit coupled to the FIFO memory circuit and configured to operate based upon a first clock signal and a write pointer, write a data burst to the FIFO memory circuit, thereby causing a jump in the write pointer to a new position, and write a burst indicator associated with the new position in the FIFO memory circuit. The bi-synchronous electronic device may include a second digital circuit coupled to the FIFO memory circuit and configured to operate based upon a second clock signal different from the first clock signal, read from the FIFO memory circuit based upon a read pointer, and synchronize the read pointer to the write pointer based upon the burst indicator.