Low-noise output buffer
    1.
    发明申请
    Low-noise output buffer 有权
    低噪声输出缓冲器

    公开(公告)号:US20030080781A1

    公开(公告)日:2003-05-01

    申请号:US10282487

    申请日:2002-10-28

    CPC classification number: H03K19/00361 H03K17/167

    Abstract: An output buffer for causing a voltage (Vout) of an integrated circuit output line (OUT,OUT13 PAD) to switch from a voltage of a first voltage line (VDD) to a voltage of a second voltage line (GND) and vice versa, comprises a current path switch circuit (111a,111b) activatable for causing a prescribed current (Is) to constantly flow between the first and second voltage lines during a time between two successive switchings of the output line, and for causing the prescribed current to be deviated (Ic1) to the output line during at least an initial phase of an output line switching from the first voltage line voltage to the second voltage line voltage or vice versa. A current delivered by the first and second voltage lines is thus kept substantially constant in the output line switching. In this way, the time derivative of the current flowing between the first and the second voltage lines is kept small and low switching noise is induced.

    Abstract translation: 一种用于使集成电路输出线(OUT,OUT13 PAD)的电压(Vout)从第一电压线(VDD)的电压切换到第二电压线(GND)的电压的输出缓冲器,反之亦然, 包括电流路径切换电路(111a,111b),其能够在输出线的两次连续切换之间的时间内使规定电流(Is)恒定地在第一和第二电压线之间流动,并且使规定电流为 在从第一电压线电压切换到第二电压线电压的输出线的至少初始相位期间偏离(Ic1)到输出线,反之亦然。 因此,输出线切换中由第一和第二电压线传递的电流基本保持恒定。 以这种方式,在第一和第二电压线之间流动的电流的时间导数保持较小,并且引起低的开关噪声。

    Charge pump for a nonvolatile memory with read voltage regulation in the presence of address skew, and nonvolatile memory comprising such a charge pump
    2.
    发明申请
    Charge pump for a nonvolatile memory with read voltage regulation in the presence of address skew, and nonvolatile memory comprising such a charge pump 失效
    在存在地址偏斜的情况下具有读取电压调节的非易失性存储器的电荷泵以及包括这种电荷泵的非易失性存储器

    公开(公告)号:US20020131303A1

    公开(公告)日:2002-09-19

    申请号:US10068560

    申请日:2002-02-05

    CPC classification number: G11C16/30 G11C5/145

    Abstract: A charge pump for a nonvolatile memory, having a clock generator circuit supplying an output clock signal; a phase generator circuit receiving the output clock signal, and supplying phase signals; and a voltage booster circuit receiving a supply voltage supplied from outside to the nonvolatile memory and the aforesaid phase signals, and supplying a read voltage higher than the supply voltage. The clock generator circuit includes a comparator receiving the read voltage and a reference voltage, and supplying a selection signal indicating the outcome of the comparison between the read and reference voltages; and a multiplexer receiving a first input clock signal having a pre-set frequency, a second input clock signal having a frequency correlated to the transition frequency of the addresses supplied to the nonvolatile memory, and the selection signal, and supplying the aforesaid output clock signal.

    Abstract translation: 一种用于非易失性存储器的电荷泵,具有提供输出时钟信号的时钟发生器电路; 接收所述输出时钟信号并提供相位信号的相位发生器电路; 以及接收从外部向非易失性存储器提供的电源电压和上述相位信号的升压电路,并提供高于电源电压的读取电压。 时钟发生器电路包括:比较器,接收读取电压和参考电压,并提供指示读取和参考电压之间的比较结果的选择信号; 以及多路复用器,其接收具有预置频率的第一输入时钟信号,具有与提供给非易失性存储器的地址的转换频率相关的频率的第二输入时钟信号和所述选择信号,以及提供所述输出时钟信号 。

    Negative charge pump architecture with self-generated boosted phases
    3.
    发明申请
    Negative charge pump architecture with self-generated boosted phases 有权
    负电荷泵结构,具有自发增压阶段

    公开(公告)号:US20030080804A1

    公开(公告)日:2003-05-01

    申请号:US09998902

    申请日:2001-10-31

    CPC classification number: H02M3/073 H02M2003/071 H02M2003/075

    Abstract: A negative charge pump circuit includes a cascade connection of a plurality of charge pump stages, each stage including at least a charge capacitance and a pass transistor driven by a corresponding phase signal. An input stage may be coupled to an input reference potential. An output stage may include an output terminal for generating a first pumped voltage. In addition, the charge pump circuit may further include a second output stage connected downstream to the input stage and including a second output terminal for generating a second pumped potential. The architecture may also be implemented in positive charge pump circuits.

    Abstract translation: 负电荷泵电路包括多个电荷泵级的级联,每级包括至少一个充电电容和由相应的相位信号驱动的通过晶体管。 输入级可以耦合到输入参考电位。 输出级可以包括用于产生第一泵送电压的输出端子。 此外,电荷泵电路还可以包括连接到输入级的下游的第二输出级,并且包括用于产生第二泵浦电位的第二输出端。 该结构也可以在正电荷泵电路中实现。

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