公开(公告)号：US20230408867A1

公开(公告)日：2023-12-21

申请号：US18209605

申请日：2023-06-14

Applicant: STMicroelectronics (Grenoble 2) SAS ,  STMicroelectronics S.r.l.

Inventor： Jonathan STECKEL ,  Giovanni CONTI ,  Gaetano L'EPISCOPO ,  Mario Antonio ALEO

IPC: G02F1/1335 ,  H01L31/173 ,  G02F1/13357 ,  H05B45/325 ,  H05B47/105 ,  H05B45/22

CPC classification number: G02F1/133612 ,  H01L31/173 ,  G02F1/133603 ,  H05B45/325 ,  H05B47/105 ,  H05B45/22 ,  G02F2203/055

Abstract: An optoelectronic device includes a backlight panel illuminating a display panel. The backlight panel includes an array of light emitting pixels, with each light emitting pixel including at least one subpixel formed by one or more light emitting diodes positioned on a substrate. At least one photodetector is positioned on the substrate and arranged to detect an amount of reflected light emitted by said subpixel and reflected by the display panel.

公开(公告)号：US20210375839A1

公开(公告)日：2021-12-02

申请号：US17354448

申请日：2021-06-22

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Davide Giuseppe PATTI ,  Mario Antonio ALEO

IPC: H01L25/16 ,  H01L21/762 ,  H01L21/763 ,  H01L25/00

Abstract: A semiconductor die includes a structural body that has a power region and a peripheral region surrounding the power region. At least one power device is positioned in the power region. Trench-insulation means extend in the structural body starting from the front side towards the back side along a first direction, adapted to hinder conduction of heat from the power region towards the peripheral region along a second direction orthogonal to the first direction. The trench-insulation means have an extension, in the second direction, greater than the thickness of the structural body along the first direction.

公开(公告)号：US20230222984A1

公开(公告)日：2023-07-13

申请号：US18120312

申请日：2023-03-10

Applicant: STMicroelectronics S.r.l.

Inventor： Gaetano L'EPISCOPO ,  Giovanni CONTI ,  Carmelo OCCHIPINTI ,  Mario Antonio ALEO

IPC: G09G3/34 ,  G09G3/36

CPC classification number: G09G3/3426 ,  G09G3/3611 ,  G09G2330/021 ,  G09G2310/08

Abstract: A non-emissive display includes a backlight controller sending a pulse during each sub-frame of a plurality of frames to row and column drivers that drive backlight zones. The row drivers count each pulse to keep a pulse count total, and reset the pulse count total when it is equal to a first number indicating how many row drivers are present. Each row driver activates its channels and waits for a next pulse if the pulse count total is not equal to the first number and if the pulse count total is equal to a second number indicating in which sub-frame that first driver is to be activated. Each row driver waits for a next pulse if the pulse count total is not equal to the first number and the second number. Each column driver activates its channel in response to receipt of each pulse.

公开(公告)号：US20240105129A1

公开(公告)日：2024-03-28

申请号：US18527968

申请日：2023-12-04

Applicant: STMicroelectronics (Grenoble 2) SAS ,  STMicroelectronics S.r.l.

Inventor： Jonathan STECKEL ,  Giovanni CONTI ,  Gaetano L'EPISCOPO ,  Mario Antonio ALEO ,  Carmelo OCCHIPINTI

IPC: G09G3/34 ,  H01L25/16

CPC classification number: G09G3/3406 ,  H01L25/167 ,  G09G2320/02 ,  G09G2320/0626 ,  G09G2320/0693 ,  G09G2360/148

Abstract: An optoelectronic device includes a backlight panel illuminating a display panel. The backlight panel includes an array of light emitting pixels, each light emitting pixel having at least one subpixel with one or more light emitting diodes positioned on a substrate. The pixel further includes at least one photodetector positioned on the substrate and arranged to detect an amount of reflected light emitted by said subpixel and reflected by the display panel.

公开(公告)号：US20230187425A1

公开(公告)日：2023-06-15

申请号：US18147563

申请日：2022-12-28

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Davide Giuseppe PATTI ,  Mario Antonio ALEO

IPC: H01L25/16 ,  H01L21/762 ,  H01L21/763 ,  H01L25/00

CPC classification number: H01L25/16 ,  H01L21/763 ,  H01L21/76224 ,  H01L25/50

Abstract: A semiconductor die includes a structural body that has a power region and a peripheral region surrounding the power region. At least one power device is positioned in the power region. Trench-insulation means extend in the structural body starting from the front side towards the back side along a first direction, adapted to hinder conduction of heat from the power region towards the peripheral region along a second direction orthogonal to the first direction. The trench-insulation means have an extension, in the second direction, greater than the thickness of the structural body along the first direction.

公开(公告)号：US20200243496A1

公开(公告)日：2020-07-30

申请号：US16773711

申请日：2020-01-27

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Davide Giuseppe PATTI ,  Mario Antonio ALEO

IPC: H01L25/16 ,  H01L21/762 ,  H01L21/763 ,  H01L25/00

Abstract: A semiconductor die includes a structural body that has a power region and a peripheral region surrounding the power region. At least one power device is positioned in the power region. Trench-insulation means extend in the structural body starting from the front side towards the back side along a first direction, adapted to hinder conduction of heat from the power region towards the peripheral region along a second direction orthogonal to the first direction. The trench-insulation means have an extension, in the second direction, greater than the thickness of the structural body along the first direction.